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Class Information
Number: 438/274
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Having integral short of source and base regions > Short formed in recess in substrate
Description: Process wherein the integral short is formed in a groove in the semiconductor substrate










Patents under this class:
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Patent Number Title Of Patent Date Issued
8703563 Source and body contact structure for trench-DMOS devices using polysilicon Apr. 22, 2014
8518777 Method for forming accumulation-mode field effect transistor with improved current capability Aug. 27, 2013
8497528 Method for fabricating a strained structure Jul. 30, 2013
8486808 Manufacturing method of semiconductor device having vertical transistor Jul. 16, 2013
8435860 Trench type semiconductor device and fabrication method for the same May. 7, 2013
8372716 Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer Feb. 12, 2013
8017469 Dual high-k oxides with sige channel Sep. 13, 2011
7951661 Semiconductor device and method of fabricating the same May. 31, 2011
7936008 Structure and method for forming accumulation-mode field effect transistor with improved current capability May. 3, 2011
7713822 Method of forming high density trench FET with integrated Schottky diode May. 11, 2010
7679146 Semiconductor device having sub-surface trench charge compensation regions Mar. 16, 2010
7651917 Semiconductor device and a method of manufacturing the same Jan. 26, 2010
7651918 Strained semiconductor power device and method Jan. 26, 2010
7648878 Method for fabricating semiconductor device with recess gate Jan. 19, 2010
7615449 Semiconductor device having a recess channel transistor Nov. 10, 2009
7598114 Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices Oct. 6, 2009
7572706 Source/drain stressor and method therefor Aug. 11, 2009
7566622 Early contact, high cell density process Jul. 28, 2009
7556995 MOS transistor manufacturing Jul. 7, 2009
7465622 Method for making a raised vertical channel transistor device Dec. 16, 2008
7411266 Semiconductor device having trench charge compensation regions and method Aug. 12, 2008
7361585 System for and method of planarizing the contact region of a via by use of a continuous inline vacuum deposition Apr. 22, 2008
7354786 Sensor element with trenched cavity Apr. 8, 2008
7344943 Method for forming a trench MOSFET having self-aligned features Mar. 18, 2008
7338864 Memory device and method for fabricating the same Mar. 4, 2008
7332396 Semiconductor device with recessed trench and method of fabricating the same Feb. 19, 2008
7314792 Method for fabricating transistor of semiconductor device Jan. 1, 2008
7282412 Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same Oct. 16, 2007
7029977 Fabrication method of semiconductor wafer Apr. 18, 2006
7005352 Trench-type MOSFET having a reduced device pitch and on-resistance Feb. 28, 2006
6977203 Method of forming narrow trenches in semiconductor substrates Dec. 20, 2005
6940126 Field-effect-controllable semiconductor component and method for producing the semiconductor component Sep. 6, 2005
6916745 Structure and method for forming a trench MOSFET having self-aligned features Jul. 12, 2005
6875657 Method of fabricating trench MIS device with graduated gate oxide layer Apr. 5, 2005
6855581 Method for fabricating a high-voltage high-power integrated circuit device Feb. 15, 2005
6639275 Semiconductor device with vertical MOSFET Oct. 28, 2003
6432775 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface Aug. 13, 2002
6426259 Vertical field effect transistor with metal oxide as sidewall gate insulator Jul. 30, 2002
6291298 Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses Sep. 18, 2001
6214673 Process for forming vertical semiconductor device having increased source contact area Apr. 10, 2001
6150671 Semiconductor device having high channel mobility and a high breakdown voltage for high power applications Nov. 21, 2000
6127248 Fabrication method for semiconductor device Oct. 3, 2000
6096608 Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench Aug. 1, 2000
5918114 Method of forming vertical trench-gate semiconductor devices having self-aligned source and body regions Jun. 29, 1999
5891776 Methods of forming insulated-gate semiconductor devices using self-aligned trench sidewall diffusion techniques Apr. 6, 1999
5672528 Method for making semiconductor device having field limiting ring Sep. 30, 1997
5583060 Method for manufacturing field effect controlled semiconductor components Dec. 10, 1996
5576245 Method of making vertical current flow field effect transistor Nov. 19, 1996
5397717 Method of fabricating a silicon carbide vertical MOSFET Mar. 14, 1995
5395777 Method of producing VDMOS transistors Mar. 7, 1995

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