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Class Information
Number: 438/273
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Having integral short of source and base regions
Description: Process for making an insulated gate field effect transistor having an integral electrical connection between the source and base (i.e., substrate) regions.










Sub-classes under this class:

Class Number Class Name Patents
438/274 Short formed in recess in substrate 75


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
5387528 Method of manufacturing a semiconductor device comprising an insulated gate field effect device Feb. 7, 1995
5384270 Method of producing silicon carbide MOSFET Jan. 24, 1995
5382538 Method for forming MOS transistors having vertical current flow and resulting structure Jan. 17, 1995
5374571 Vertical power MOS device with increased ruggedness and method of fabrication Dec. 20, 1994
5360746 Method of fabricating a semiconductor device Nov. 1, 1994
5346838 Method for fabricating an insulated gate control thyristor Sep. 13, 1994
5338693 Process for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFET Aug. 16, 1994
5322802 Method of fabricating silicon carbide field effect transistor Jun. 21, 1994
5298442 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry Mar. 29, 1994
5288653 Process of fabricating an insulated-gate field effect transistor Feb. 22, 1994
5262339 Method of manufacturing a power semiconductor device using implants and solid diffusion source Nov. 16, 1993
5234851 Small cell, low contact assistance rugged power field effect devices and method of fabrication Aug. 10, 1993
5187117 Single diffusion process for fabricating semiconductor devices Feb. 16, 1993
5182222 Process for manufacturing a DMOS transistor Jan. 26, 1993
5179034 Method for fabricating insulated gate semiconductor device Jan. 12, 1993
5171705 Self-aligned structure and process for DMOS transistor Dec. 15, 1992
5164327 Method of manufacturing a mis-type semiconductor Nov. 17, 1992
5156989 Complementary, isolated DMOS IC technology Oct. 20, 1992
5141889 Method of making enhanced insulated gate bipolar transistor Aug. 25, 1992
5141883 Process for the manufacture of power-MOS semiconductor devices Aug. 25, 1992
5128277 Conductivity modulation type semiconductor device and method for manufacturing the same Jul. 7, 1992
5118638 Method for manufacturing MOS type semiconductor devices Jun. 2, 1992
5087577 Manufacturing method for a power MISFET Feb. 11, 1992
5084401 Insulated gate bipolar transistor and method of manufacturing the same Jan. 28, 1992
5073511 Method for manufacturing a conductivity modulation MOS semiconductor power device (HIMOS) Dec. 17, 1991
5059547 Method of manufacturing double diffused MOSFET with potential biases Oct. 22, 1991
5034336 Method of producing insulated gate bipolar tranistor Jul. 23, 1991
5032532 Method for fabricating insulated gate semiconductor device Jul. 16, 1991
5023191 Method of producing a semiconductor device using a single mask method for providing multiple masking patterns Jun. 11, 1991
5015593 Method of manufacturing semiconductor device May. 14, 1991
4987098 Method of producing a metal-oxide semiconductor device Jan. 22, 1991
4983535 Vertical DMOS transistor fabrication process Jan. 8, 1991
4970173 Method of making high voltage vertical field effect transistor with improved safe operating area Nov. 13, 1990
4931408 Method of fabricating a short-channel low voltage DMOS transistor Jun. 5, 1990
4920062 Manufacturing method for vertically conductive semiconductor devices Apr. 24, 1990
4916085 MOS power structure with protective device against overvoltages and manufacturing process therefor Apr. 10, 1990
4914047 Method of producing insulated gate MOSFET employing polysilicon mask Apr. 3, 1990
4914058 Grooved DMOS process with varying gate dielectric thickness Apr. 3, 1990
4914051 Method for making a vertical power DMOS transistor with small signal bipolar transistors Apr. 3, 1990
4908328 High voltage power IC process Mar. 13, 1990
4902636 Method for manufacturing a depletion type double-diffused metal-oxide semiconductor field effect transistor device Feb. 20, 1990
4898835 Single mask totally self-aligned power MOSFET cell fabrication process Feb. 6, 1990
4883767 Method of fabricating self aligned semiconductor devices Nov. 28, 1989
4879254 Method of manufacturing a DMOS Nov. 7, 1989
4849367 Method of manufacturing a DMOS Jul. 18, 1989
4810665 Semiconductor device and method of fabrication Mar. 7, 1989
4798810 Method for manufacturing a power MOS transistor Jan. 17, 1989
4774198 Self-aligned process for fabricating small DMOS cells Sep. 27, 1988
4716126 Fabrication of double diffused metal oxide semiconductor transistor Dec. 29, 1987
4705759 High power MOSFET with low on-resistance and high breakdown voltage Nov. 10, 1987

1 2 3 4










 
 
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