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Class Information
Number: 438/273
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Having integral short of source and base regions
Description: Process for making an insulated gate field effect transistor having an integral electrical connection between the source and base (i.e., substrate) regions.

Sub-classes under this class:

Class Number Class Name Patents
438/274 Short formed in recess in substrate 75

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8580640 Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained Nov. 12, 2013
8563381 Method for manufacturing a power semiconductor device Oct. 22, 2013
8435860 Trench type semiconductor device and fabrication method for the same May. 7, 2013
8389362 Semiconductor component with cell structure and method for producing the same Mar. 5, 2013
8384152 Semiconductor device having trench gate VDMOSFET and method of manufacturing the same Feb. 26, 2013
8344449 Manufacturing process of a power electronic device integrated in a semiconductor substrate with wide band gap and electronic device thus obtained Jan. 1, 2013
8247295 DMOS type semiconductor device and method for manufacturing the same Aug. 21, 2012
8222694 True CSP power MOSFET based on bottom-source LDMOS Jul. 17, 2012
8163618 Power MOSFET device structure for high frequency applications Apr. 24, 2012
8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance Apr. 17, 2012
8058686 Semiconductor device including a columnar intermediate region and manufacturing method thereof Nov. 15, 2011
7927952 Method of manufacturing semiconductor devices Apr. 19, 2011
7880224 Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same Feb. 1, 2011
7871854 Method of making a vertical photodetector Jan. 18, 2011
7851856 True CSP power MOSFET based on bottom-source LDMOS Dec. 14, 2010
7732228 Method for manufacturing printing head Jun. 8, 2010
7713822 Method of forming high density trench FET with integrated Schottky diode May. 11, 2010
7651918 Strained semiconductor power device and method Jan. 26, 2010
7648878 Method for fabricating semiconductor device with recess gate Jan. 19, 2010
7595241 Method for fabricating silicon carbide vertical MOSFET devices Sep. 29, 2009
7510938 Semiconductor superjunction structure Mar. 31, 2009
7470589 Semiconductor device Dec. 30, 2008
7465622 Method for making a raised vertical channel transistor device Dec. 16, 2008
7358141 Semiconductor device and method for fabricating the same Apr. 15, 2008
7135420 Semiconductor device and manufacturing method thereof Nov. 14, 2006
7084034 High voltage MOS-gated power device and related manufacturing process Aug. 1, 2006
7045845 Self-aligned vertical gate semiconductor device May. 16, 2006
7005352 Trench-type MOSFET having a reduced device pitch and on-resistance Feb. 28, 2006
6979863 Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same Dec. 27, 2005
6979621 Trench MOSFET having low gate charge Dec. 27, 2005
6977203 Method of forming narrow trenches in semiconductor substrates Dec. 20, 2005
6921697 Method for making trench MIS device with reduced gate-to-drain capacitance Jul. 26, 2005
6897525 Semiconductor device and method of manufacturing the same May. 24, 2005
6875657 Method of fabricating trench MIS device with graduated gate oxide layer Apr. 5, 2005
6855581 Method for fabricating a high-voltage high-power integrated circuit device Feb. 15, 2005
6787420 Semiconductor device with alternating conductivity type layer and method of manufacturing the same Sep. 7, 2004
6781163 Heterojunction field effect transistor Aug. 24, 2004
6768167 MIS semiconductor device and the manufacturing method thereof Jul. 27, 2004
6762080 Method of manufacturing a semiconductor device having a cathode and an anode from a wafer Jul. 13, 2004
6756259 Gate insulating structure for power devices, and related manufacturing process Jun. 29, 2004
6639275 Semiconductor device with vertical MOSFET Oct. 28, 2003
6638824 Metal gate double diffusion MOSFET with improved switching speed and reduced gate tunnel leakage Oct. 28, 2003
6589337 Method of producing silicon carbide device by cleaning silicon carbide substrate with oxygen gas Jul. 8, 2003
6524894 Semiconductor device for use in power-switching device and method of manufacturing the same Feb. 25, 2003
6468866 Single feature size MOS technology power device Oct. 22, 2002
6432775 Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface Aug. 13, 2002
6376311 Vertical double diffused MOSFET and method for manufacturing same Apr. 23, 2002
6319778 Method of making light emitting diode Nov. 20, 2001
6294431 Process of manufacture of a non-volatile memory with electric continuity of the common source lines Sep. 25, 2001
6285060 Barrier accumulation-mode MOSFET Sep. 4, 2001

1 2 3 4

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