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Class Information
Number: 438/271
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Gate electrode in trench or recess in semiconductor substrate > V-gate
Description: Process for making an insulated gate field effect transistor wherein the gate electrode has a V-shape configuration.
Patents under this class:
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Title Of Patent |
Date Issued |
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High density memory with storage capacitor |
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Integrated circuit devices providing improved short prevention |
Jan. 20, 2004 |
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Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing |
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Trench-gate semiconductor devices |
Jul. 1, 2003 |
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| 6566198 |
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May. 20, 2003 |
| 6558974 |
Electrical detection of V-groove width |
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Method for forming a flash memory cell having contoured floating gate surface |
Apr. 8, 2003 |
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Trench DMOS transistor having reduced punch-through |
Apr. 8, 2003 |
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Power MOS device with improved gate charge performance |
Oct. 8, 2002 |
| 6458632 |
UMOS-like gate-controlled thyristor structure for ESD protection |
Oct. 1, 2002 |
| 6417050 |
Semiconductor component and method of manufacture |
Jul. 9, 2002 |
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Insulating gate type semiconductor device |
May. 21, 2002 |
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Detached drain MOSFET |
May. 14, 2002 |
| 6380027 |
Dual tox trench dram structures and process using V-groove |
Apr. 30, 2002 |
| 6376315 |
Method of forming a trench DMOS having reduced threshold voltage |
Apr. 23, 2002 |
| 6365462 |
Methods of forming power semiconductor devices having tapered trench-based insulating regions therein |
Apr. 2, 2002 |
| 6344379 |
Semiconductor device with an undulating base region and method therefor |
Feb. 5, 2002 |
| 6342403 |
Electrical detection of V-groove width |
Jan. 29, 2002 |
| 6323090 |
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Nov. 27, 2001 |
| 6319776 |
Forming high voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes |
Nov. 20, 2001 |
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Oct. 9, 2001 |
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Semiconductor device having a trench structure and method for manufacturing the same |
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Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor |
May. 29, 2001 |
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May. 1, 2001 |
| 6188105 |
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Bar field effect transistor |
Jan. 30, 2001 |
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Method of manufacturing vertical trench misfet |
Jan. 16, 2001 |
| 6150693 |
Short channel non-self aligned VMOS field effect transistor |
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| 6150219 |
Method for fabricating a high bias device |
Nov. 21, 2000 |
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Low and high voltage CMOS devices and process for fabricating same |
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Production method of a vertical type MOSFET |
Jan. 18, 2000 |
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Vertically oriented structure with sloped opening and method for etching |
Jan. 4, 2000 |
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Insulated gate semiconductor device |
Dec. 14, 1999 |
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Manufacturing method of semiconductor device with a groove |
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Process to manufacture high density ULSI ROM array |
Dec. 7, 1999 |
| 5997638 |
Localized lattice-mismatch-accomodation dislocation network epitaxy |
Dec. 7, 1999 |
| 5960271 |
Short channel self-aligned VMOS field effect transistor |
Sep. 28, 1999 |
| 5893736 |
Methods of forming insulated gate semiconductor devices having spaced epitaxial JFET regions therein |
Apr. 13, 1999 |
| 5811336 |
Method of forming MOS transistors having gate insulators of different thicknesses |
Sep. 22, 1998 |
| 5786244 |
Method for making GaAs-InGaAs high electron mobility transistor |
Jul. 28, 1998 |
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