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Class Information
Number: 438/271
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Gate electrode in trench or recess in semiconductor substrate > V-gate
Description: Process for making an insulated gate field effect transistor wherein the gate electrode has a V-shape configuration.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
6821834 Ion implantation methods and transistor cell layout for fin type transistors Nov. 23, 2004
6818946 Trench MOSFET with increased channel density Nov. 16, 2004
6818948 Split gate flash memory device and method of fabricating the same Nov. 16, 2004
6818939 Vertical compound semiconductor field effect transistor structure Nov. 16, 2004
6818947 Buried gate-field termination structure Nov. 16, 2004
6806174 Semiconductor devices and methods for fabricating the same Oct. 19, 2004
6798013 Vertically integrated flash memory cell and method of fabricating a vertically integrated flash memory cell Sep. 28, 2004
6777743 Insulating gate type semiconductor device Aug. 17, 2004
6777293 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure Aug. 17, 2004
6764906 Method for making trench mosfet having implanted drain-drift region Jul. 20, 2004
6713814 DMOS transistor structure with gate electrode trench for high density integration and method of fabricating the structure Mar. 30, 2004
6710402 Vertical MOS transistor and a method of manufacturing the same Mar. 23, 2004
6693011 Power MOS element and method for producing the same Feb. 17, 2004
6686625 Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor component Feb. 3, 2004
6687114 High density memory with storage capacitor Feb. 3, 2004
6680511 Integrated circuit devices providing improved short prevention Jan. 20, 2004
6664592 Semiconductor device with groove type channel structure Dec. 16, 2003
6653691 Radio frequency (RF) power devices having faraday shield layers therein Nov. 25, 2003
6635535 Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing Oct. 21, 2003
6586291 High density memory with storage capacitor Jul. 1, 2003
6586800 Trench-gate semiconductor devices Jul. 1, 2003
6576506 Electrostatic discharge protection in double diffused MOS transistors Jun. 10, 2003
6573562 Semiconductor component and method of operation Jun. 3, 2003
6569739 Method of reducing the effect of implantation damage to shallow trench isolation regions during the formation of variable thickness gate layers May. 27, 2003
6566198 CMOS structure with non-epitaxial raised source/drain and self-aligned gate and method of manufacture May. 20, 2003
6558974 Electrical detection of V-groove width May. 6, 2003
6545315 Trench DMOS transistor having reduced punch-through Apr. 8, 2003
6544844 Method for forming a flash memory cell having contoured floating gate surface Apr. 8, 2003
6524916 Controlled gate length and gate profile semiconductor device and manufacturing method therefor Feb. 25, 2003
6525373 Power semiconductor device having trench gate structure and method for manufacturing the same Feb. 25, 2003
6509610 Insulated gate semiconductor device with high minority carrier injection and low on-voltage by enlarged pn-junction area Jan. 21, 2003
6461918 Power MOS device with improved gate charge performance Oct. 8, 2002
6458632 UMOS-like gate-controlled thyristor structure for ESD protection Oct. 1, 2002
6417050 Semiconductor component and method of manufacture Jul. 9, 2002
6392272 Insulating gate type semiconductor device May. 21, 2002
6388298 Detached drain MOSFET May. 14, 2002
6380027 Dual tox trench dram structures and process using V-groove Apr. 30, 2002
6376315 Method of forming a trench DMOS having reduced threshold voltage Apr. 23, 2002
6365462 Methods of forming power semiconductor devices having tapered trench-based insulating regions therein Apr. 2, 2002
6344379 Semiconductor device with an undulating base region and method therefor Feb. 5, 2002
6342403 Electrical detection of V-groove width Jan. 29, 2002
6323090 Semiconductor device with trenched substrate and method Nov. 27, 2001
6319776 Forming high voltage complementary semiconductor device (HV-CMOS) with gradient doping electrodes Nov. 20, 2001
6300229 Semiconductor device and method of manufacturing the same Oct. 9, 2001
6274431 Method for manufacturing an integrated circuit arrangement having at least one MOS transistor Aug. 14, 2001
6265744 Semiconductor device having a trench structure and method for manufacturing the same Jul. 24, 2001
6239465 Non-volatile semiconductor memory device having vertical transistors with the floating and control gates in a trench and fabrication method therefor May. 29, 2001
6225669 Non-uniform gate/dielectric field effect transistor May. 1, 2001
6188105 High density MOS-gated power device and process for forming same Feb. 13, 2001
6180441 Bar field effect transistor Jan. 30, 2001

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