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Class Information
Number: 438/271
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Gate electrode in trench or recess in semiconductor substrate > V-gate
Description: Process for making an insulated gate field effect transistor wherein the gate electrode has a V-shape configuration.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622350 |
Method of manufacturing semiconductor device having cell transistor with recess channel structure |
Nov. 24, 2009 |
| 7615452 |
Method of fabrication of normally-off field-effect semiconductor device |
Nov. 10, 2009 |
| 7615472 |
Method for manufacturing nitride semiconductor substrate |
Nov. 10, 2009 |
| 7553731 |
Method of manufacturing semiconductor device |
Jun. 30, 2009 |
| 7544571 |
Trench gate FET with self-aligned features |
Jun. 9, 2009 |
| 7537994 |
Methods of forming semiconductor devices, assemblies and constructions |
May. 26, 2009 |
| 7537995 |
Method for fabricating a dual poly gate in semiconductor device |
May. 26, 2009 |
| 7518184 |
DRAM access transistor |
Apr. 14, 2009 |
| 7507631 |
Epitaxial filled deep trench structures |
Mar. 24, 2009 |
| 7504306 |
Method of forming trench gate field effect transistor with recessed mesas |
Mar. 17, 2009 |
| 7501323 |
Power MOSFET and method for forming same using a self-aligned body implant |
Mar. 10, 2009 |
| 7485532 |
Method of forming trench gate FETs with reduced gate to drain charge |
Feb. 3, 2009 |
| 7465622 |
Method for making a raised vertical channel transistor device |
Dec. 16, 2008 |
| 7459744 |
Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench and a method of using the same |
Dec. 2, 2008 |
| 7449401 |
Semiconductor device with asymmetric transistor and method for fabricating the same |
Nov. 11, 2008 |
| 7423317 |
Split electrode gate trench power device |
Sep. 9, 2008 |
| 7378312 |
Recess gate transistor structure for use in semiconductor device and method thereof |
May. 27, 2008 |
| 7354827 |
Transistor having asymmetric channel region, semiconductor device including the same, and method of fabricating semiconductor device including the same |
Apr. 8, 2008 |
| 7332397 |
Method for fabricating semiconductor device |
Feb. 19, 2008 |
| 7268043 |
Semiconductor device and method of manufacturing the same |
Sep. 11, 2007 |
| 7265024 |
DMOS device having a trenched bus structure |
Sep. 4, 2007 |
| 7259069 |
Semiconductor device and method of manufacturing the same |
Aug. 21, 2007 |
| 7232727 |
Method for fabricating semiconductor device with recessed channel region |
Jun. 19, 2007 |
| 7221020 |
Method to construct a self aligned recess gate for DRAM access devices |
May. 22, 2007 |
| 7208375 |
Semiconductor device |
Apr. 24, 2007 |
| 7205199 |
Method of forming a recess channel trench pattern, and fabricating a recess channel transistor |
Apr. 17, 2007 |
| 7189621 |
Semiconductor device and method for fabricating the same |
Mar. 13, 2007 |
| 7160793 |
Edge termination in MOS transistors |
Jan. 9, 2007 |
| 7157755 |
Polymer sacrificial light absorbing structure and method |
Jan. 2, 2007 |
| 7153745 |
Recessed gate transistor structure and method of forming the same |
Dec. 26, 2006 |
| 7122431 |
Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions |
Oct. 17, 2006 |
| 7094640 |
Method of making a trench MOSFET device with improved on-resistance |
Aug. 22, 2006 |
| 7091080 |
Depletion implant for power MOSFET |
Aug. 15, 2006 |
| 7053006 |
Methods of fabricating oxide layers by plasma nitridation and oxidation |
May. 30, 2006 |
| 7049194 |
Trench DMOS device with improved drain contact |
May. 23, 2006 |
| 7041572 |
Fabrication method for a deep trench isolation structure of a high-voltage device |
May. 9, 2006 |
| 7018899 |
Methods of fabricating lateral double-diffused metal oxide semiconductor devices |
Mar. 28, 2006 |
| 6998676 |
Double-gate structure fin-type transistor |
Feb. 14, 2006 |
| 6987040 |
Trench MOSFET with increased channel density |
Jan. 17, 2006 |
| 6977203 |
Method of forming narrow trenches in semiconductor substrates |
Dec. 20, 2005 |
| 6956264 |
Trenched semiconductor devices and their manufacture |
Oct. 18, 2005 |
| 6921698 |
Thin film transistor and fabricating method thereof |
Jul. 26, 2005 |
| 6916712 |
MOS-gated device having a buried gate and process for forming same |
Jul. 12, 2005 |
| 6888196 |
Vertical MOSFET reduced in cell size and method of producing the same |
May. 3, 2005 |
| 6875657 |
Method of fabricating trench MIS device with graduated gate oxide layer |
Apr. 5, 2005 |
| 6867083 |
Method of forming a body contact of a transistor and structure therefor |
Mar. 15, 2005 |
| 6861701 |
Trench power MOSFET with planarized gate bus |
Mar. 1, 2005 |
| 6855601 |
Trench-gate semiconductor devices, and their manufacture |
Feb. 15, 2005 |
| 6855982 |
Self aligned double gate transistor having a strained channel region and process therefor |
Feb. 15, 2005 |
| 6841825 |
Semiconductor device |
Jan. 11, 2005 |
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