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Class Information
Number: 438/270
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Gate electrode in trench or recess in semiconductor substrate
Description: Process for making an insulated gate field effect transistor wherein the gate electrode is formed in a groove or recess in the semiconductor substrate.










Sub-classes under this class:

Class Number Class Name Patents
438/272 Totally embedded in semiconductive layers 243
438/271 V-gate 202


Patents under this class:

Patent Number Title Of Patent Date Issued
8710575 Semiconductor device, integrated circuit and method of manufacturing an integrated circuit Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8709895 Manufacturing method power semiconductor device Apr. 29, 2014
8704303 Dual channel trench LDMOS transistors and transistors integrated therewith Apr. 22, 2014
8704297 Trench metal oxide semiconductor field effect transistor with multiple trenched source-body contacts for reducing gate charge Apr. 22, 2014
8703564 Method for manufacturing a transistor for preventing or reducing short channel effect Apr. 22, 2014
8703563 Source and body contact structure for trench-DMOS devices using polysilicon Apr. 22, 2014
8703556 Method of making a FinFET device Apr. 22, 2014
8692373 Methods of forming a metal silicide region on at least one silicon structure Apr. 8, 2014
8692350 Semiconductor device and method of manufacturing the same Apr. 8, 2014
8692321 Semiconductor device and method for forming the same Apr. 8, 2014
8692316 Isolation structures for FinFET semiconductor devices Apr. 8, 2014
8691650 MOSFET with recessed channel film and abrupt junctions Apr. 8, 2014
8691649 Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices Apr. 8, 2014
8691635 Fabrication method of semiconductor device Apr. 8, 2014
8686500 Double diffused metal oxide semiconductor device and manufacturing method thereof Apr. 1, 2014
8686497 DRAM cell utilizing a doubly gated vertical channel Apr. 1, 2014
8686492 Non-volatile FINFET memory device and manufacturing method thereof Apr. 1, 2014
8686468 Semiconductor power device having wide termination trench and self-aligned source regions for mask saving Apr. 1, 2014
8686439 Silicon carbide semiconductor element Apr. 1, 2014
8686435 Silicon carbide semiconductor device Apr. 1, 2014
8685822 Semiconductor component and method of manufacture Apr. 1, 2014
8680613 Termination design for high voltage device Mar. 25, 2014
8680612 Semiconductor device and manufacturing method thereof Mar. 25, 2014
8680609 Depletion mode semiconductor device with trench gate and manufacturing method thereof Mar. 25, 2014
8679922 Method of producing semiconductor device and method of producing solid-state image pickup device Mar. 25, 2014
8679921 Canyon gate transistor and methods for its fabrication Mar. 25, 2014
8679919 Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same Mar. 25, 2014
8674420 Semiconductor devices including buried gate electrodes and methods of forming semiconductor devices including buried gate electrodes Mar. 18, 2014
8669612 Technique for forming the deep doped columns in superjunction Mar. 11, 2014
8664103 Metal gate stack formation for replacement gate technology Mar. 4, 2014
8664065 Method of forming an insulated gate field effect transistor device having a shield electrode structure Mar. 4, 2014
8664064 Fin field effect transistor and method for forming the same Mar. 4, 2014
8659065 Semiconductor device and method of manufacturing the same Feb. 25, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8658538 Method of fabricating memory device Feb. 25, 2014
8658500 Single crystal U-MOS gates using microwave crystal regrowth Feb. 25, 2014
8658498 Single mask spacer technique for semiconductor device features Feb. 25, 2014
8653603 Semiconductor devices with peripheral region insertion patterns Feb. 18, 2014
8652904 Semiconductor device with gate trench Feb. 18, 2014
8652901 Single-mask spacer technique for semiconductor device features Feb. 18, 2014
8652900 Trench MOSFET with ultra high cell density and manufacture thereof Feb. 18, 2014
8648412 Trench power field effect transistor device and method Feb. 11, 2014
8647972 Multi-layer work function metal replacement gate Feb. 11, 2014
8647950 Vertical gate LDMOS device Feb. 11, 2014
8647949 Structure and method of fabricating a transistor having a trench gate Feb. 11, 2014
8647948 Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET Feb. 11, 2014
8643137 Short channel lateral MOSFET Feb. 4, 2014
8643096 Semiconductor device with buried bit line and method for fabricating the same Feb. 4, 2014
8643094 Method of forming a self-aligned contact opening in MOSFET Feb. 4, 2014











 
 
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