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Class Information
Number: 438/269
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
Description: Process for making an insulated gate field effect transistor wherein a epitaxial semiconductor layer is deposited through an opening in an insulating layer upon a semiconductor substrate.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7432161 Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth Oct. 7, 2008
7374990 Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array May. 20, 2008
7371645 Method of manufacturing a field effect transistor device with recessed channel and corner gate device May. 13, 2008
7361556 Method of fabricating semiconductor side wall fin Apr. 22, 2008
7354826 Method for forming memory array bitlines comprising epitaxially grown silicon and related structure Apr. 8, 2008
7314799 Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making Jan. 1, 2008
7303966 Semiconductor device and method of manufacturing the same Dec. 4, 2007
7300837 FinFET transistor device on SOI and method of fabrication Nov. 27, 2007
7276416 Method of forming a vertical transistor Oct. 2, 2007
7271067 Voltage sustaining layer with opposite-doped islands for semiconductor power devices Sep. 18, 2007
7271066 Semiconductor device and a method of manufacturing the same Sep. 18, 2007
7268043 Semiconductor device and method of manufacturing the same Sep. 11, 2007
7262099 Methods of forming field effect transistors Aug. 28, 2007
7259069 Semiconductor device and method of manufacturing the same Aug. 21, 2007
7241655 Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array Jul. 10, 2007
7238576 Semiconductor device and method of manufacturing the same Jul. 3, 2007
7163864 Method of fabricating semiconductor side wall fin Jan. 16, 2007
7153731 Method of forming a field effect transistor with halo implant regions Dec. 26, 2006
7144779 Method of forming epitaxial silicon-comprising material Dec. 5, 2006
7138315 Low thermal resistance semiconductor device and method therefor Nov. 21, 2006
7138316 Semiconductor channel on insulator structure Nov. 21, 2006
7132339 Transistor structure with thick recessed source/drain structures and fabrication process of same Nov. 7, 2006
7118960 Selective polysilicon stud growth Oct. 10, 2006
7084001 Method of forming film including a comb tooth patterning film Aug. 1, 2006
7067376 High voltage power MOSFET having low on-resistance Jun. 27, 2006
7045845 Self-aligned vertical gate semiconductor device May. 16, 2006
7029977 Fabrication method of semiconductor wafer Apr. 18, 2006
7015125 Trench MOSFET device with polycrystalline silicon source contact structure Mar. 21, 2006
6969644 Versatile system for triple-gated transistors with engineered corners Nov. 29, 2005
6955969 Method of growing as a channel region to reduce source/drain junction capacitance Oct. 18, 2005
6924205 Collar formation using selective SiGe/Si etch Aug. 2, 2005
6908815 Dual work function semiconductor structure with borderless contact and method of fabricating the same Jun. 21, 2005
6900099 Flash memory cell and method for fabricating the same May. 31, 2005
6878993 Self-aligned trench MOS junction field-effect transistor for high-frequency applications Apr. 12, 2005
6875657 Method of fabricating trench MIS device with graduated gate oxide layer Apr. 5, 2005
6875656 Method for improving silicon-on-insulator (SOI) film uniformity on a semiconductor wafer Apr. 5, 2005
6864129 Double gate MOSFET transistor and method for the production thereof Mar. 8, 2005
6821864 Method to achieve increased trench depth, independent of CD as defined by lithography Nov. 23, 2004
6797569 Method for low topography semiconductor device formation Sep. 28, 2004
6773994 CMOS vertical replacement gate (VRG) transistors Aug. 10, 2004
6762098 Trench DMOS transistor with embedded trench schottky rectifier Jul. 13, 2004
6756273 Semiconductor component and method of manufacturing Jun. 29, 2004
6727195 Method and system for decreasing the spaces between wordlines Apr. 27, 2004
6699754 Flash memory cell and method for fabricating the same Mar. 2, 2004
6673646 Growth of compound semiconductor structures on patterned oxide films and process for fabricating same Jan. 6, 2004
6670244 Method for fabricating a body region for a vertical MOS transistor arrangement having a reduced on resistivity Dec. 30, 2003
6660582 Method of forming a vertical field-effect transistor device Dec. 9, 2003
6660584 Selective polysilicon stud growth of 6F2 memory cell manufacturing having a convex upper surface profile Dec. 9, 2003
6660590 Vertical transistor and method of manufacturing thereof Dec. 9, 2003
6642115 Double-gate FET with planarized surfaces and self-aligned silicides Nov. 4, 2003

1 2 3


 
 
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