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Class Information
Number: 438/269
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
Description: Process for making an insulated gate field effect transistor wherein a epitaxial semiconductor layer is deposited through an opening in an insulating layer upon a semiconductor substrate.










Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8679925 Methods of manufacturing semiconductor devices and transistors Mar. 25, 2014
8679920 Semiconductor devices having stacked structures and a layer formed thereon tapered in direction opposite of a tapering of the stacked structures and methods of fabricating the same Mar. 25, 2014
8673718 Methods of forming FinFET devices with alternative channel materials Mar. 18, 2014
8647929 Semiconductor devices and methods of manufacturing thereof Feb. 11, 2014
8647948 Method of manufacturing vertical planar power MOSFET and method of manufacturing trench-gate power MOSFET Feb. 11, 2014
8637369 Method for manufacturing an integrated power device having gate structures within trenches Jan. 28, 2014
8629024 Methods of manufacturing semiconductor devices and transistors Jan. 14, 2014
8603878 Vertical-type semiconductor devices and methods of manufacturing the same Dec. 10, 2013
8587024 Vertical junction field effect transistors and bipolar junction transistors Nov. 19, 2013
8569150 Method for producing a semiconductor device with a semiconductor body Oct. 29, 2013
8507976 Nonvolatile memory device and method for fabricating the same Aug. 13, 2013
8501566 Method for fabricating a recessed channel access transistor device Aug. 6, 2013
8502282 Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making Aug. 6, 2013
8497528 Method for fabricating a strained structure Jul. 30, 2013
8476132 Production method for semiconductor device Jul. 2, 2013
8455317 Method for fabricating semiconductor device having field effect transistor Jun. 4, 2013
8445963 Multi-gate semiconductor devices with improved carrier mobility May. 21, 2013
8435855 Methods of manufacturing semiconductor devices May. 7, 2013
8421127 Semiconductor device and method for fabricating the same Apr. 16, 2013
8399921 Metal oxide semiconductor (MOS) structure and manufacturing method thereof Mar. 19, 2013
8399324 Semiconductor device and method of fabricating the same Mar. 19, 2013
8399323 Method for fabricating vertical channel type nonvolatile memory device Mar. 19, 2013
8377779 Methods of manufacturing semiconductor devices and transistors Feb. 19, 2013
8372716 Method of forming a semiconductor device having vertical charge-compensated structure and sub-surface connecting layer Feb. 12, 2013
8338255 Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation Dec. 25, 2012
8309417 Vertical-type semiconductor devices and methods of manufacturing the same Nov. 13, 2012
8304313 Semiconductor device and its manufacturing method Nov. 6, 2012
8269307 Shallow trench isolation structure and method for forming the same Sep. 18, 2012
8247283 Manufacture of semiconductor device with stress structure Aug. 21, 2012
8247284 Manufacture of semiconductor device with stress structure Aug. 21, 2012
8242555 FIN field effect transistor Aug. 14, 2012
8222108 Method of making a trench MOSFET having improved avalanche capability using three masks process Jul. 17, 2012
8211770 Transistor with A-face conductive channel and trench protecting well region Jul. 3, 2012
8198161 Vertical transistor and method for forming the same Jun. 12, 2012
8187938 Non-volatile memory device and method for fabricating the same May. 29, 2012
8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance Apr. 17, 2012
8158471 Capacitorless DRAM on bulk silicon Apr. 17, 2012
8154050 Semiconductor device with semiconductor epitaxial layers buried in source/drain regions, and fabrication method of the same Apr. 10, 2012
8105902 Semiconductor device with vertical transistor and method for fabricating the same Jan. 31, 2012
8105903 Method for making a trench MOSFET with shallow trench structures Jan. 31, 2012
8101484 Method of forming a FET having ultra-low on-resistance and low gate charge Jan. 24, 2012
8097510 Method of forming lateral trench gate FET with direct source-drain current path Jan. 17, 2012
8097501 Method for manufacturing semiconductor device Jan. 17, 2012
8093127 Method for forming a vertical transistor having tensile layers Jan. 10, 2012
8076209 Methods for fabricating MOS devices having highly stressed channels Dec. 13, 2011
8071435 Manufacture of semiconductor device with stress structure Dec. 6, 2011
8071450 Method for forming voltage sustaining layer with opposite-doped islands for semiconductor power devices Dec. 6, 2011
8048743 Method for fabricating vertical channel type nonvolatile memory device Nov. 1, 2011
7998816 Method for fabricating semiconductor device having vertical gate Aug. 16, 2011
7955914 Method of producing an asymmetric architecture semi-conductor device Jun. 7, 2011

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