Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel > Patents

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Class Information
Number: 438/268
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel
Description: Process for making a insulated gate field effect transistor wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.

Sub-classes under this class:

Class Number	Class Name	Patents
438/270	Gate electrode in trench or recess in semiconductor substrate	1,008
438/273	Having integral short of source and base regions	145
438/269	Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer	143

Patents under this class:

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number	Title Of Patent	Date Issued
7615449	Semiconductor device having a recess channel transistor	Nov. 10, 2009
7611949	Method of fabricating metal-oxide-semiconductor transistor	Nov. 3, 2009
7612431	Trench polysilicon diode	Nov. 3, 2009
7608510	Alignment of trench for MOS	Oct. 27, 2009
7605036	Method of forming floating gate array of flash memory device	Oct. 20, 2009
7601595	Surround gate access transistors with grown ultra-thin bodies	Oct. 13, 2009
7601596	Semiconductor device with trench transistors and method for manufacturing such a device	Oct. 13, 2009
7602014	Superjunction power MOSFET	Oct. 13, 2009
7595241	Method for fabricating silicon carbide vertical MOSFET devices	Sep. 29, 2009
7588985	Method for fabricating fin transistor	Sep. 15, 2009
7588977	Method of fabricating a MOS field effect transistor having plurality of channels	Sep. 15, 2009
7585705	Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop	Sep. 8, 2009
7585711	Semiconductor-on-insulator (SOI) strained active area transistor	Sep. 8, 2009
7582531	Method for producing a buried semiconductor layer	Sep. 1, 2009
7582519	Method of forming a trench structure having one or more diodes embedded therein adjacent a PN junction	Sep. 1, 2009
7579650	Termination design for deep source electrode MOSFET	Aug. 25, 2009
7579648	Semiconductor device having a channel pattern and method of manufacturing the same	Aug. 25, 2009
7566620	DRAM including a vertical surround gate transistor	Jul. 28, 2009
7566619	Methods of forming integrated circuit devices having field effect transistors of different types in different device regions	Jul. 28, 2009
7564099	Monolithic MOSFET and Schottky diode device	Jul. 21, 2009
7557006	Methods of forming field effect transistors	Jul. 7, 2009
7557406	Segmented pillar layout for a high-voltage vertical transistor	Jul. 7, 2009
7553731	Method of manufacturing semiconductor device	Jun. 30, 2009
7550352	MOS transistor having a recessed gate electrode and fabrication method thereof	Jun. 23, 2009
7550791	Transistor and its method of manufacture	Jun. 23, 2009
7547585	P channel Rad Hard MOSFET with enhancement implant	Jun. 16, 2009
7544545	Trench polysilicon diode	Jun. 9, 2009
7544558	Method for integrating DMOS into sub-micron CMOS process	Jun. 9, 2009
7544570	Vertical-type metal insulator semiconductor field effect transistor device, and production method for manufacturing such transistor device	Jun. 9, 2009
7544572	Multi-operational mode transistor with multiple-channel device structure	Jun. 9, 2009
7541248	Integrated semiconductor device and method of manufacturing thereof	Jun. 2, 2009
7541640	Vertical field-effect transistor and method of forming the same	Jun. 2, 2009
7528027	Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channel	May. 5, 2009
7528040	Methods of fabricating silicon carbide devices having smooth channels	May. 5, 2009
7524725	Vertical transistor of semiconductor device and method for forming the same	Apr. 28, 2009
7524726	Method for fabricating a semiconductor device	Apr. 28, 2009
7517758	Method of forming a vertical transistor	Apr. 14, 2009
7514327	Electronically scannable multiplexing device	Apr. 7, 2009
7514324	Selective epitaxy in vertical integrated circuit	Apr. 7, 2009
7510954	Memory array with surrounding gate access transistors and capacitors with global and staggered local bit lines	Mar. 31, 2009
7510938	Semiconductor superjunction structure	Mar. 31, 2009
7501323	Power MOSFET and method for forming same using a self-aligned body implant	Mar. 10, 2009
7498226	Method for fabricating semiconductor device with step gated asymmetric recess	Mar. 3, 2009
7494875	Gate etch process for a high-voltage FET	Feb. 24, 2009
7491609	Semiconductor device and method for manufacturing the same	Feb. 17, 2009
7491610	Fabrication method	Feb. 17, 2009
7488650	Method of forming trench-gate electrode for FinFET device	Feb. 10, 2009
7488651	Method of making vertical transistor structures having vertical-surrounding-gates with self-aligned features	Feb. 10, 2009
7482285	Dual epitaxial layer for high voltage vertical conduction power MOSFET devices	Jan. 27, 2009
7482229	DRAM cells with vertical transistors	Jan. 27, 2009