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Class Information
Number: 438/268
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Vertical channel
Description: Process for making a insulated gate field effect transistor wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.










Sub-classes under this class:

Class Number Class Name Patents
438/270 Gate electrode in trench or recess in semiconductor substrate 1,847
438/273 Having integral short of source and base regions 164
438/269 Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer 225


Patents under this class:

Patent Number Title Of Patent Date Issued
8709894 3D structured memory devices and methods for manufacturing thereof Apr. 29, 2014
8709893 Method of making a low-Rdson vertical power MOSFET device Apr. 29, 2014
8704303 Dual channel trench LDMOS transistors and transistors integrated therewith Apr. 22, 2014
8704298 MOS diode with termination structure and method for manufacturing the same Apr. 22, 2014
8691649 Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices Apr. 8, 2014
8686435 Silicon carbide semiconductor device Apr. 1, 2014
8685821 Vertical channel memory devices with nonuniform gate electrodes and methods of fabricating the same Apr. 1, 2014
8680605 Stacked memory devices and method of manufacturing the same Mar. 25, 2014
8680600 Vertical transistor structure and method of manufacturing same Mar. 25, 2014
8679919 Electronic device comprising a conductive structure and an insulating layer within a trench and a process of forming the same Mar. 25, 2014
8679903 Vertical quadruple conduction channel insulated gate transistor Mar. 25, 2014
8674426 Nonvolatile semiconductor memory device Mar. 18, 2014
8673718 Methods of forming FinFET devices with alternative channel materials Mar. 18, 2014
8669601 Method for producing semiconductor device and semiconductor device having pillar-shaped semiconductor Mar. 11, 2014
8664048 Semiconductor devices with minimized current flow differences and methods of same Mar. 4, 2014
8659082 Method for manufacturing a semiconductor device having super junction structure Feb. 25, 2014
8652903 Access transistor for memory device Feb. 18, 2014
8648428 Memory cell array with semiconductor selection device for multiple memory cells Feb. 11, 2014
8647972 Multi-layer work function metal replacement gate Feb. 11, 2014
8647947 Semiconductor device including a MOS transistor and production method therefor Feb. 11, 2014
8643098 Method for fabricating semiconductor device with side contact Feb. 4, 2014
8643089 Semiconductor device and fabricating method thereof Feb. 4, 2014
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure Feb. 4, 2014
8643080 Three-dimensional semiconductor memory device Feb. 4, 2014
8642427 Semiconductor device and method for fabricating the same Feb. 4, 2014
8642426 Semiconductor device and production method therefor Feb. 4, 2014
8637922 Semiconductor device Jan. 28, 2014
8637913 Nonvolatile memory device and method for fabricating the same Jan. 28, 2014
8637362 Memory array with ultra-thin etched pillar surround gate access transistors and buried data/bit lines Jan. 28, 2014
8637359 Fin-last replacement metal gate FinFET process Jan. 28, 2014
8633095 Semiconductor device with voltage compensation structure Jan. 21, 2014
8629018 Methods of forming NAND memory constructions Jan. 14, 2014
8623726 Method for filling a physical isolation trench and integrating a vertical channel array with a periphery circuit Jan. 7, 2014
8623716 Multi-gate semiconductor devices and methods of forming the same Jan. 7, 2014
8617961 Post-gate isolation area formation for fin field effect transistor device Dec. 31, 2013
8617952 Vertical transistor with hardening implatation Dec. 31, 2013
8617942 Producing transistor including single layer reentrant profile Dec. 31, 2013
8614478 Method for protecting a semiconductor device against degradation, a semiconductor device protected against hot charge carriers and a manufacturing method therefor Dec. 24, 2013
8614471 Collections of laterally crystallized semiconductor islands for use in thin film transistors Dec. 24, 2013
8614127 Method of making a FinFET device Dec. 24, 2013
8613861 Method of manufacturing vertical transistors Dec. 24, 2013
8609494 Surround gate CMOS semiconductor device Dec. 17, 2013
8609491 Method for fabricating semiconductor device with buried bit lines Dec. 17, 2013
8604541 Structure and fabrication process of super junction MOSFET Dec. 10, 2013
8603906 Method of forming a three-dimensional semiconductor memory device comprising sub-cells, terraced structures and strapping regions Dec. 10, 2013
8598654 MOSFET device with thick trench bottom oxide Dec. 3, 2013
8598650 Semiconductor device and production method therefor Dec. 3, 2013
8598641 Sea-of-fins structure on a semiconductor substrate and method of fabrication Dec. 3, 2013
8592793 Electrode diffusions in two-terminal non-volatile memory devices Nov. 26, 2013
8592280 Fin field effect transistor devices with self-aligned source and drain regions Nov. 26, 2013











 
 
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