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Class Information
Number: 438/266
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)
Description: Process for making a floating gate-type field effect transistor having an additional, nonmemory control electrode (i.e., having direct electrical contact thereto) or channel portion.

Sub-classes under this class:

Class Number Class Name Patents
438/267 Including forming gate electrode as conductive sidewall spacer to another electrode 413

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6881629 Method to make minimal spacing between floating gates in split gate flash Apr. 19, 2005
6882001 Electrically-programmable non-volatile memory cell Apr. 19, 2005
6873004 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof Mar. 29, 2005
6869845 Semiconductor memory device having a memory region and a peripheral region, and a manufacturing method thereof Mar. 22, 2005
6867097 Method of making a memory cell with polished insulator layer Mar. 15, 2005
6867100 System for high-precision double-diffused MOS transistors Mar. 15, 2005
6861699 Non-volatile memory device Mar. 1, 2005
6858497 Non-volatile semiconductor memory device and a method of producing the same Feb. 22, 2005
6852596 Electronic memory circuit and related manufacturing method Feb. 8, 2005
6849514 Method of manufacturing SONOS flash memory device Feb. 1, 2005
6849500 Method for manufacturing a nonvolatile memory device including an opening formed into an inverse-tapered shape Feb. 1, 2005
6849553 Method of manufacturing semiconductor device Feb. 1, 2005
6849502 Semiconductor device and method of manufacturing the same Feb. 1, 2005
6846713 Method for manufacturing a nonvolatile memory transistor Jan. 25, 2005
6844587 Non-volatile memory device having improved programming and erasing characteristics and method of fabricating the same Jan. 18, 2005
6844231 Method of manufacturing a flash memory cell using a self-aligned floating gate Jan. 18, 2005
6841444 Nonvolatile semiconductor memory device and manufacturing method thereof Jan. 11, 2005
6838320 Method for manufacturing a semiconductor integrated circuit device Jan. 4, 2005
6838342 Nonvolatile memory fabrication methods comprising lateral recessing of dielectric sidewalls at substrate isolation regions Jan. 4, 2005
6830973 Nonvolatile semiconductor memory device and method of manufacturing the same Dec. 14, 2004
6825085 Method to improve flash forward tunneling voltage (FTV) performance Nov. 30, 2004
6821850 Method of manufacturing a multi-level flash EEPROM cell Nov. 23, 2004
6821849 Split gate flash memory cell and manufacturing method thereof Nov. 23, 2004
6818512 Split-gate flash with source/drain multi-sharing Nov. 16, 2004
6818511 Non-volatile memory device to protect floating gate from charge loss and method for fabricating the same Nov. 16, 2004
6815289 Method of manufacturing semiconductor device Nov. 9, 2004
6815761 Semiconductor integrated circuit device Nov. 9, 2004
6812083 Fabrication method for non-volatile memory Nov. 2, 2004
6808991 Method for forming twin bit cell flash memory Oct. 26, 2004
6800525 Method of manufacturing split gate flash memory device Oct. 5, 2004
6797568 Flash technology transistors and methods for forming the same Sep. 28, 2004
6797566 Semiconductor integrated circuit device and process for producing the same Sep. 28, 2004
6797604 Method for manufacturing device substrate with metal back-gate and structure formed thereby Sep. 28, 2004
6797567 High-K tunneling dielectric for read only memory device and fabrication method thereof Sep. 28, 2004
6794711 Non-volatile memory device having select transistor structure and SONOS cell structure and method for fabricating the device Sep. 21, 2004
6794250 Vertical split gate flash memory cell and method for fabricating the same Sep. 21, 2004
6794236 Eeprom device with improved capacitive coupling and fabrication process Sep. 21, 2004
6790718 Method of manufacturing semiconductor memory device including one step of forming exposing the surface of the select transistors while not exposing the surface cell transistors Sep. 14, 2004
6787842 Method for operating a stacked gate field effect transistor (FET) device Sep. 7, 2004
6780707 Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area Aug. 24, 2004
6773992 Method for fabricating nonvolatile-semiconductor memory device Aug. 10, 2004
6768162 Split gate flash memory cell and manufacturing method thereof Jul. 27, 2004
6764905 Method of manufacturing a scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate Jul. 20, 2004
6762093 High coupling floating gate transistor Jul. 13, 2004
6759300 Method for fabricating floating gate Jul. 6, 2004
6756270 Semiconductor device and fabrication method thereof Jun. 29, 2004
6756640 Nonvolatile memory and manufacturing method thereof Jun. 29, 2004
6753223 Method for fabricating flash memory cell Jun. 22, 2004
6750525 Non-volatile memory device having a metal-oxide-nitride-oxide-semiconductor gate structure Jun. 15, 2004
6747308 Single poly EEPROM with reduced area Jun. 8, 2004

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

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