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Class Information
Number: 438/266
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)
Description: Process for making a floating gate-type field effect transistor having an additional, nonmemory control electrode (i.e., having direct electrical contact thereto) or channel portion.

Sub-classes under this class:

Class Number Class Name Patents
438/267 Including forming gate electrode as conductive sidewall spacer to another electrode 413

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Patent Number Title Of Patent Date Issued
6451654 Process for fabricating self-aligned split gate flash memory Sep. 17, 2002
6448605 Method of fabricating gate Sep. 10, 2002
6445035 Power MOS device with buried gate and groove Sep. 3, 2002
6440796 Poly spacer split gate cell with extremely small cell size Aug. 27, 2002
6440798 Method of forming a mixed-signal circuit embedded NROM memory and MROM memory Aug. 27, 2002
6441429 Split-gate flash memory device having floating gate electrode with sharp peak Aug. 27, 2002
6436769 Split gate flash memory with virtual ground array structure and method of fabricating the same Aug. 20, 2002
6436768 Source drain implant during ONO formation for improved isolation of SONOS devices Aug. 20, 2002
6432771 DRAM and MOS transistor manufacturing Aug. 13, 2002
6429073 Methods for manufacturing semiconductor devices having a non-volatile memory transistor Aug. 6, 2002
6426898 Method of reducing trapped holes induced by erase operations in the tunnel oxide of flash memory cells Jul. 30, 2002
6426257 Flash memory and manufacturing method therefor Jul. 30, 2002
6417049 Split gate flash cell for multiple storage Jul. 9, 2002
6417044 Non-volatile memory and memory of manufacturing the same Jul. 9, 2002
6410957 Method of forming poly tip to improve erasing and programming speed in split gate flash Jun. 25, 2002
6406961 Process for producing flash memory without mis-alignment of floating gate with field oxide Jun. 18, 2002
6403406 Method for forming a TFT in a liquid crystal display Jun. 11, 2002
6387756 Manufacturing method of non-volatile semiconductor device May. 14, 2002
6387755 Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting May. 14, 2002
6387757 Sacrificial self aligned spacer layer ion implant mask method for forming a split gate field effect transistor (FET) device May. 14, 2002
6384450 Semiconductor memory device and method of manufacturing the same May. 7, 2002
6380582 Autoaligned etching process for realizing word lines in memory devices integrated semiconductor substrates Apr. 30, 2002
6380584 Semiconductor memory device with single and double sidewall spacers Apr. 30, 2002
6380031 Method to form an embedded flash memory circuit with reduced process steps Apr. 30, 2002
6376306 Method for forming non volatile memory structures on a semiconductor substrate Apr. 23, 2002
6376341 Optimization of thermal cycle for the formation of pocket implants Apr. 23, 2002
6372576 Method for manufacturing a floating gate in a flash memory device Apr. 16, 2002
6365459 Method for making flash memory cell having reentrant angle floating gate Apr. 2, 2002
6365456 Process for manufacturing semiconductor integrated memory devices with cells matrix having virtual ground Apr. 2, 2002
6362054 Method for fabricating MOS device with halo implanted region Mar. 26, 2002
6358797 Method of forming a non-volatile memory cell Mar. 19, 2002
6350652 Process for manufacturing nonvolatile memory cells with dimensional control of the floating gate regions Feb. 26, 2002
6350653 Embedded DRAM on silicon-on-insulator substrate Feb. 26, 2002
6350651 Method for making flash memory with UV opaque passivation layer Feb. 26, 2002
6346442 Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array Feb. 12, 2002
6344393 Fully recessed semiconductor method for low power applications Feb. 5, 2002
6339006 Flash EEPROM cell and method of manufacturing the same Jan. 15, 2002
6339000 Method for fabricating interpoly dielectrics in non-volatile stacked-gate memory structures Jan. 15, 2002
6335244 Method for producing nonvolatile semiconductor memory device Jan. 1, 2002
6335554 Semiconductor Memory Jan. 1, 2002
6331464 Method of fabricating a flash memory Dec. 18, 2001
6329247 Nonvolatile semiconductor memory device and manufacturing method thereof Dec. 11, 2001
6326264 Semiconductor device and method for manufacturing same Dec. 4, 2001
6323517 Non-volatile memory device with single-layered overwriting transistor Nov. 27, 2001
6319774 Method for forming a memory cell Nov. 20, 2001
6312991 Elimination of poly cap easy poly 1 contact for NAND product Nov. 6, 2001
6306708 Fabrication method for an electrically erasable programmable read only memory Oct. 23, 2001
6303438 Method for manufacturing a nonvolatile semiconductor memory device having increased hot electron injection efficiency Oct. 16, 2001
6300196 Method of fabricating gate Oct. 9, 2001
6297099 Method to free control tunneling oxide thickness on poly tip of flash Oct. 2, 2001

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