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Class Information
Number: 438/263
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.) > Tunneling insulator
Description: Process for making a floating gate type insulated gate field effect transistor including an insulative layer adjacent the gate electrode which allows passage of charge carriers therethrough.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7445994 |
Methods of forming non-volatile memory devices using selective nitridation techniques |
Nov. 4, 2008 |
| 7439157 |
Isolation trenches for memory devices |
Oct. 21, 2008 |
| 7414281 |
Flash memory with high-K dielectric material between substrate and gate |
Aug. 19, 2008 |
| 7405123 |
Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof |
Jul. 29, 2008 |
| 7402490 |
Charge-trapping memory device and methods for operating and manufacturing the cell |
Jul. 22, 2008 |
| 7399667 |
Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements |
Jul. 15, 2008 |
| 7391071 |
Nonvolatile memory devices with trenched side-wall transistors and method of fabricating the same |
Jun. 24, 2008 |
| 7387936 |
Semiconductor device and method of fabricating the same |
Jun. 17, 2008 |
| 7384848 |
Method for forming non-volatile memory with inlaid floating gate |
Jun. 10, 2008 |
| 7374998 |
Selective incorporation of charge for transistor channels |
May. 20, 2008 |
| 7371645 |
Method of manufacturing a field effect transistor device with recessed channel and corner gate device |
May. 13, 2008 |
| 7368350 |
Memory cell arrays and methods for producing memory cell arrays |
May. 6, 2008 |
| RE40275 |
Method for producing a memory cell |
Apr. 29, 2008 |
| 7361548 |
Methods of forming a capacitor using an atomic layer deposition process |
Apr. 22, 2008 |
| 7355239 |
Fabrication of semiconductor device exhibiting reduced dielectric loss in isolation trenches |
Apr. 8, 2008 |
| 7348241 |
Cell structure of EPROM device and method for fabricating the same |
Mar. 25, 2008 |
| 7332408 |
Isolation trenches for memory devices |
Feb. 19, 2008 |
| 7319058 |
Fabrication method of a non-volatile memory |
Jan. 15, 2008 |
| 7300844 |
Method of forming gate of flash memory device |
Nov. 27, 2007 |
| 7271437 |
Non-volatile memory with hole trapping barrier |
Sep. 18, 2007 |
| 7250338 |
Scalable Flash/NV structures and devices with extended endurance |
Jul. 31, 2007 |
| 7183158 |
Method of fabricating a non-volatile memory |
Feb. 27, 2007 |
| 7183157 |
Nonvolatile memory devices |
Feb. 27, 2007 |
| 7183143 |
Method for forming nitrided tunnel oxide layer |
Feb. 27, 2007 |
| 7179709 |
Method of fabricating non-volatile memory device having local SONOS gate structure |
Feb. 20, 2007 |
| 7166510 |
Method for manufacturing flash memory device |
Jan. 23, 2007 |
| 7125769 |
Method of fabricating flash memory device |
Oct. 24, 2006 |
| 7125772 |
Nonvolatile memory |
Oct. 24, 2006 |
| 7118967 |
Protection of charge trapping dielectric flash memory devices from UV-induced charging in BEOL processing |
Oct. 10, 2006 |
| 7115471 |
Method of manufacturing semiconductor device including nonvolatile memory |
Oct. 3, 2006 |
| 7091550 |
Non-volatile memory device and method of manufacturing the same |
Aug. 15, 2006 |
| 7084030 |
Method of forming a non-volatile memory device having floating trap type memory cell |
Aug. 1, 2006 |
| 7075829 |
Programmable memory address and decode circuits with low tunnel barrier interpoly insulators |
Jul. 11, 2006 |
| 7074674 |
Method for manufacturing one-time electrically programmable read only memory |
Jul. 11, 2006 |
| 7071050 |
Semiconductor integrated circuit device having single-element type non-volatile memory elements |
Jul. 4, 2006 |
| 7071060 |
EEPROM with split gate source side infection with sidewall spacers |
Jul. 4, 2006 |
| 7060554 |
PECVD silicon-rich oxide layer for reduced UV charging |
Jun. 13, 2006 |
| 7060560 |
Method of manufacturing non-volatile memory cell |
Jun. 13, 2006 |
| 7056789 |
Production method for semiconductor substrate and production method for field effect transistor and semiconductor substrate and field effect transistor |
Jun. 6, 2006 |
| 7052954 |
Method of fabricating a MOS structure with two conductive layers on the gate electrode |
May. 30, 2006 |
| 7041554 |
Methods of fabricating flash memory devices having self aligned shallow trench isolation structures |
May. 9, 2006 |
| 7026687 |
Non-volatile semiconductor memory and method of manufacturing the same |
Apr. 11, 2006 |
| 7018898 |
Non-volatile two transistor semiconductor memory cell and method for producing the same |
Mar. 28, 2006 |
| 6995063 |
Method of fabricating memory cell in semiconductor device |
Feb. 7, 2006 |
| 6989319 |
Methods for forming nitrogen-rich regions in non-volatile semiconductor memory devices |
Jan. 24, 2006 |
| 6979618 |
Method of manufacturing NAND flash device |
Dec. 27, 2005 |
| 6977201 |
Method for fabricating flash memory device |
Dec. 20, 2005 |
| 6972226 |
Charge-trapping memory cell array and method for production |
Dec. 6, 2005 |
| 6969645 |
Method of manufacturing a semiconductor device comprising a non-volatile memory with memory cells |
Nov. 29, 2005 |
| 6960501 |
Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets |
Nov. 1, 2005 |
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