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Class Information
Number: 438/261
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Multiple interelectrode dielectrics or nonsilicon compound gate insulator
Description: Process for making a floating gate-type insulated gate field effect transistor with plural interelectrode dielectrics or a nonsilicon compound dielectric material.










Patents under this class:
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Patent Number Title Of Patent Date Issued
7618864 Nonvolatile memory device and methods of forming the same Nov. 17, 2009
7615438 Lanthanide yttrium aluminum oxide dielectric films Nov. 10, 2009
7615450 Method of manufacturing flash memory device Nov. 10, 2009
7608885 Flash memory device and method of manufacturing the same Oct. 27, 2009
7598140 Method of producing a semiconductor device having an oxide film Oct. 6, 2009
7595237 Non-volatile memory cell with a hybrid access transistor Sep. 29, 2009
7592222 Method of fabricating flash memory device Sep. 22, 2009
7592225 Methods of forming spacer patterns using assist layer for high density semiconductor devices Sep. 22, 2009
7588989 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same Sep. 15, 2009
7589373 Semiconductor device Sep. 15, 2009
7585728 Methods of programming memory cells using manipulation of oxygen vacancies Sep. 8, 2009
7585729 Method of manufacturing a non-volatile memory device Sep. 8, 2009
7582526 Method for manufacturing semiconductor device Sep. 1, 2009
7582924 Semiconductor devices having polymetal gate electrodes Sep. 1, 2009
7575978 Method for making conductive nanoparticle charge storage element Aug. 18, 2009
7572699 Process of forming an electronic device including fins and discontinuous storage elements Aug. 11, 2009
7566618 Non-volatile memory device having SONOS structure and manufacturing method thereof Jul. 28, 2009
7566617 Method for manufacturing semiconductor elemental device forming an amorphous high dielectric film and an amorphous silicon film Jul. 28, 2009
7564094 Non-volatile memory devices and methods of manufacturing the same Jul. 21, 2009
7560341 Semiconductor device and manufacturing method therefor Jul. 14, 2009
7550349 Method for forming gate dielectric layers Jun. 23, 2009
7550801 Nonvolatile semiconductor memory device Jun. 23, 2009
7547601 Low power electrically alterable nonvolatile memory cells and arrays Jun. 16, 2009
7544569 Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing Jun. 9, 2009
7534681 Memory device fabrication May. 19, 2009
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer May. 12, 2009
7531868 Non-volatile semiconductor memory device May. 12, 2009
7528037 Flash memory having a high-permittivity tunnel dielectric May. 5, 2009
7521263 Method of forming an insulating film, method of manufacturing a semiconductor device, and semiconductor device Apr. 21, 2009
7521325 Semiconductor device and method for fabricating the same Apr. 21, 2009
7517750 Flash memory devices having multilayered inter-gate dielectric layers including metal oxide layers and methods of manufacturing the same Apr. 14, 2009
7517757 Non-volatile memory device having dual gate and method of forming the same Apr. 14, 2009
7518176 Programmable nonvolatile memory and semiconductor integrated circuit device Apr. 14, 2009
7511334 Twin-ONO-type SONOS memory Mar. 31, 2009
7510935 Method of manufacturing a charge-trapping dielectric and method of manufacturing a sonos-type non-volatile semiconductor device Mar. 31, 2009
7507627 Method of fabricating nonvolatile memory device Mar. 24, 2009
7507629 Semiconductor devices having an interfacial dielectric layer and related methods Mar. 24, 2009
7507644 Method of forming dielectric layer of flash memory device Mar. 24, 2009
7507652 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure Mar. 24, 2009
7507626 Floating gate of flash memory device and method of forming the same Mar. 24, 2009
7501680 Memory device having nanocrystals in memory cell Mar. 10, 2009
7498227 Method for manufacturing a non-volatile memory device Mar. 3, 2009
7498223 Semiconductor devices having improved field plates Mar. 3, 2009
7498222 Enhanced etching of a high dielectric constant layer Mar. 3, 2009
7494873 Memory utilizing oxide-nitride nanolaminates Feb. 24, 2009
7488645 Method of fabricating a non-volatile memory Feb. 10, 2009
7488648 Methods of fabricating scalable two-transistor memory devices having metal source/drain regions Feb. 10, 2009
7485533 Fabrication method of an non-volatile memory Feb. 3, 2009
7482623 Organic semiconductor film and organic semiconductor device Jan. 27, 2009
7479428 NROM flash memory with a high-permittivity gate dielectric Jan. 20, 2009

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