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Class Information
Number: 438/261
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Multiple interelectrode dielectrics or nonsilicon compound gate insulator
Description: Process for making a floating gate-type insulated gate field effect transistor with plural interelectrode dielectrics or a nonsilicon compound dielectric material.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6642573 Use of high-K dielectric material in modified ONO structure for semiconductor devices Nov. 4, 2003
6638877 Ultra-thin SiO2using N2O as the oxidant Oct. 28, 2003
6632714 Method for manufacturing semiconductor memory Oct. 14, 2003
6630383 Bi-layer floating gate for improved work function between floating gate and a high-K dielectric layer Oct. 7, 2003
6627503 Method of forming a multilayer dielectric stack Sep. 30, 2003
6627500 Method of fabricating nitride read only memory Sep. 30, 2003
6620683 Twin-bit memory cell having shared word lines and shared bit-line contacts for electrically erasable and programmable read-only memory (EEPROM) and method of manufacturing the same Sep. 16, 2003
6613632 Fabrication method for a silicon nitride read-only memory Sep. 2, 2003
6611031 Semiconductor device and method for its manufacture Aug. 26, 2003
6610577 Self-aligned polysilicon polish Aug. 26, 2003
6602776 Method and system for providing a polysilicon stringer monitor Aug. 5, 2003
6601224 Layout to minimize gate orientation related skew effects Jul. 29, 2003
6596587 Shallow junction EEPROM device and process for fabricating the device Jul. 22, 2003
6596584 Method for fabricating a self-aligned source line flash memory device Jul. 22, 2003
6596590 Method of making multi-level type non-volatile semiconductor memory device Jul. 22, 2003
6597046 Integrated circuit with multiple gate dielectric structures Jul. 22, 2003
6589842 Manufacturing method of a gate-split flash memory Jul. 8, 2003
6589843 Methods of forming FLASH field effect transistor gates and non-FLASH field effect transistor gates Jul. 8, 2003
6589844 Process for manufacturing semiconductor memory device having floating and control gates in which multiple insulating films are formed over floating gates Jul. 8, 2003
6586302 Method of using trenching techniques to make a transistor with a floating gate Jul. 1, 2003
6580103 Array of flash memory cells and data program and erase methods of the same Jun. 17, 2003
6573140 Process for making a dual bit memory device with isolated polysilicon floating gates Jun. 3, 2003
6566199 Method and system for forming film, semiconductor device and fabrication method thereof May. 20, 2003
6563183 Gate array with multiple dielectric properties and method for forming same May. 13, 2003
6562683 Bit-line oxidation by removing ONO oxide prior to bit-line implant May. 13, 2003
6555436 Simultaneous formation of charge storage and bitline to wordline isolation Apr. 29, 2003
6551883 MOS device with dual gate insulators and method of forming the same Apr. 22, 2003
6551880 Method of utilizing fabrication process of floating gate spacer to build twin-bit monos/sonos memory Apr. 22, 2003
6537881 Process for fabricating a non-volatile memory device Mar. 25, 2003
6524911 Combination of BPTEOS oxide film with CMP and RTA to achieve good data retention Feb. 25, 2003
6524913 Method of fabricating a non-volatile memory with a spacer Feb. 25, 2003
6521496 Non-volatile memory semiconductor device including a graded, grown, high quality control gate oxide layer and associated methods Feb. 18, 2003
6518634 Strontium nitride or strontium oxynitride gate dielectric Feb. 11, 2003
6518072 Deposited screen oxide for reducing gate edge lifting Feb. 11, 2003
6518110 Method of fabricating memory cell structure of flash memory having annular floating gate Feb. 11, 2003
6511925 Process for forming high dielectric constant gate dielectric for integrated circuit structure Jan. 28, 2003
6509230 Non-volatile memory semiconductor device including a graded, grown, high quality oxide layer and associated methods Jan. 21, 2003
6509231 Nitride ready only memory cell with two top oxide layers and the method for manufacturing the same Jan. 21, 2003
6509228 Etching procedure for floating gate formation of a flash memory device Jan. 21, 2003
6495409 MOS transistor having aluminum nitride gate structure and method of manufacturing same Dec. 17, 2002
6489201 Method for manufacturing a semiconductor device Dec. 3, 2002
6486029 Integration of an ion implant hard mask structure into a process for fabricating high density memory cells Nov. 26, 2002
6486030 Methods of forming field effect transistors and integrated circuitry including TiN gate element Nov. 26, 2002
6486682 Determination of dielectric constants of thin dielectric materials in a MOS (metal oxide semiconductor) stack Nov. 26, 2002
6482723 Method for forming self-aligned floating gates Nov. 19, 2002
6483159 Undoped polysilicon as the floating-gate of a split-gate flash cell Nov. 19, 2002
6482706 Method to scale down device dimension using spacer to confine buried drain implant Nov. 19, 2002
6479348 Method of making memory wordline hard mask extension Nov. 12, 2002
6479349 Laser transceiver system controller Nov. 12, 2002
6472273 Method of manufacturing a flash memory device Oct. 29, 2002

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