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Class Information
Number: 438/259
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Including forming gate electrode in trench or recess in substrate
Description: Process for making a floating gate type insulated gate field effect transistor including forming a gate electrode in a groove located in the semiconductor substrate.










Patents under this class:

Patent Number Title Of Patent Date Issued
8710582 Semiconductor device and method for manufacturing same Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8692373 Methods of forming a metal silicide region on at least one silicon structure Apr. 8, 2014
8692316 Isolation structures for FinFET semiconductor devices Apr. 8, 2014
8686492 Non-volatile FINFET memory device and manufacturing method thereof Apr. 1, 2014
8680588 Field effect transistor with buried gate pattern Mar. 25, 2014
8679929 On current in one-time-programmable memory cells Mar. 25, 2014
8679916 Non-volatile semiconductor memory device and process of manufacturing the same Mar. 25, 2014
8664712 Flash memory cell on SeOI having a second control gate buried under the insulating layer Mar. 4, 2014
8658498 Single mask spacer technique for semiconductor device features Feb. 25, 2014
8652904 Semiconductor device with gate trench Feb. 18, 2014
8652902 Floating gate semiconductor memory device and method for producing such a device Feb. 18, 2014
8652901 Single-mask spacer technique for semiconductor device features Feb. 18, 2014
8652900 Trench MOSFET with ultra high cell density and manufacture thereof Feb. 18, 2014
8643094 Method of forming a self-aligned contact opening in MOSFET Feb. 4, 2014
8643092 Shielded trench MOSFET with multiple trenched floating gates as termination Feb. 4, 2014
8642425 Method of making an insulated gate semiconductor device and structure Feb. 4, 2014
8642424 Replacement metal gate structure and methods of manufacture Feb. 4, 2014
8641926 Water dispersible polythiophenes made with polymeric acid colloids Feb. 4, 2014
8637378 Semiconductor component and methods for producing a semiconductor component Jan. 28, 2014
8637368 Fabrication of MOS device with varying trench depth Jan. 28, 2014
8637367 Method for producing an insulation layer between two electrodes Jan. 28, 2014
8633073 Method of forming semiconductor device Jan. 21, 2014
8633072 Method of manufacturing semiconductor device Jan. 21, 2014
8633036 Manufacturing method of ferroelectric capacitor Jan. 21, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8609492 Vertical memory cell Dec. 17, 2013
8609488 Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith Dec. 17, 2013
8603891 Methods for forming vertical memory devices and apparatuses Dec. 10, 2013
8598653 FinFET having cross-hair cells Dec. 3, 2013
8597998 Power MOS device fabrication Dec. 3, 2013
8592897 Semiconductor device comprising transistor structures and methods for forming same Nov. 26, 2013
8592895 Field effect transistor with source, heavy body region and shielded gate Nov. 26, 2013
8592274 LDMOS with accumulation enhancement implant Nov. 26, 2013
8587051 Nonvolatile semiconductor memory device Nov. 19, 2013
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
8586432 Method for manufacturing vertical-channel tunneling transistor Nov. 19, 2013
8575688 Trench device structure and fabrication Nov. 5, 2013
8575672 Nonvolatile semiconductor memory devices Nov. 5, 2013
8569131 Source/drain-to-source/drain recessed strap and methods of manufacture of same Oct. 29, 2013
8564053 Trench MOSFET with trenched floating gates in termination Oct. 22, 2013
8564052 Trench MOSFET with trenched floating gates in termination Oct. 22, 2013
8563377 Trench-based power semiconductor devices with increased breakdown voltage characteristics Oct. 22, 2013
8557660 Semiconductor device and method for forming the same Oct. 15, 2013
8552523 Semiconductor device and method for manufacturing Oct. 8, 2013
8541835 Schottky FET fabricated with gate last process Sep. 24, 2013
8530306 Method of forming a slit recess channel gate Sep. 10, 2013
8525256 Power semiconductor structure with schottky diode Sep. 3, 2013
8519484 Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same Aug. 27, 2013
8519477 Trench MOSFET with trenched floating gates and trenched channel stop gates in termination Aug. 27, 2013











 
 
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