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Class Information
Number: 438/257
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate)
Description: Process for making an insulated gate field effect transistor wherein an additional gate electrode completely separated by dielectric from a first insulated gate electrode is formed.


Sub-classes under this class:

Class Number Class Name Patents
438/266 Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.) 545
438/258 Including additional field effect transistor (e.g., sense or access transistor, etc.) 878
438/262 Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.) 275
438/259 Including forming gate electrode in trench or recess in substrate 612
438/261 Multiple interelectrode dielectrics or nonsilicon compound gate insulator 540
438/265 Oxidizing sidewall of gate electrode 235
438/260 Textured surface of gate insulator or gate electrode 166
438/264 Tunneling insulator 770


Patents under this class:

Patent Number Title Of Patent Date Issued
7453116 Semiconductor memory device and method of fabricating the same Nov. 18, 2008
7452773 Method of manufacturing a flash memory device Nov. 18, 2008
7452771 Method for fabricating a semiconductor device Nov. 18, 2008
7452766 Finned memory cells and the fabrication thereof Nov. 18, 2008
7449743 Control gate profile for flash technology Nov. 11, 2008
7449390 Methods of forming memory Nov. 11, 2008
7445995 Flash memory structure and fabrication method thereof Nov. 4, 2008
7445994 Methods of forming non-volatile memory devices using selective nitridation techniques Nov. 4, 2008
7445993 Method of fabricating non-volatile memory Nov. 4, 2008
7445992 Method for fabricating cell structure of non-volatile memory device Nov. 4, 2008
7443725 Floating gate isolation and method of making the same Oct. 28, 2008
7442606 Method of manufacturing a semiconductor device Oct. 28, 2008
7442605 Resistively switching memory Oct. 28, 2008
7442567 Method for fabricating transflective liquid crystal display Oct. 28, 2008
7439567 Contactless nonvolatile memory array Oct. 21, 2008
7439157 Isolation trenches for memory devices Oct. 21, 2008
7439135 Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same Oct. 21, 2008
7439134 Method for process integration of non-volatile memory cell transistors with transistors of another type Oct. 21, 2008
7439132 Semiconductor device comprising capacitor and method of fabricating the same Oct. 21, 2008
7439131 Flash memory device having resistivity measurement pattern and method of forming the same Oct. 21, 2008
7439125 Contact structure for a stack DRAM storage capacitor Oct. 21, 2008
7439082 Conductive memory stack with non-uniform width Oct. 21, 2008
7436019 Non-volatile memory cells shaped to increase coupling to word lines Oct. 14, 2008
7435648 Methods of trench and contact formation in memory cells Oct. 14, 2008
7435647 NOR-type flash memory device and manufacturing method thereof Oct. 14, 2008
7435646 Method for forming floating gates within NVM process Oct. 14, 2008
7435645 Dynamic random access memory (DRAM) Oct. 14, 2008
RE40532 Non-volatile memory cell and fabrication method Oct. 7, 2008
7432153 Direct tunneling semiconductor memory device and fabrication process thereof Oct. 7, 2008
7429766 Split gate type nonvolatile memory device Sep. 30, 2008
7429512 Method for fabricating flash memory device Sep. 30, 2008
7429511 Method of forming a tunneling insulating layer in nonvolatile memory device Sep. 30, 2008
7427546 Transistor device and method for manufacturing the same Sep. 23, 2008
7427537 Semiconductor integrated circuit device and method for manufacturing the same Sep. 23, 2008
7427533 Methods of fabricating semiconductor devices including trench device isolation layers having protective insulating layers and related devices Sep. 23, 2008
7425482 Non-volatile memory device and method for fabricating the same Sep. 16, 2008
7423312 Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins Sep. 9, 2008
7422939 Semiconductor device having one-time programmable ROM and method of fabricating the same Sep. 9, 2008
7422932 Nonvolatile semiconductor memory device Sep. 9, 2008
7419895 NAND memory arrays Sep. 2, 2008
7419888 Method of forming a silicon-rich nanocrystalline structure by an atomic layer deposition process and method of manufacturing a non-volatile semiconductor device using the same Sep. 2, 2008
7419875 Shallow trench isolation in floating gate devices Sep. 2, 2008
7419869 Semiconductor device and a method for manufacturing the same Sep. 2, 2008
7419865 Methods of forming memory circuitry Sep. 2, 2008
7416945 Method for forming a split gate memory device Aug. 26, 2008
7416942 Method for manufacturing semiconductor device Aug. 26, 2008
7416941 Four-bit finfet NVRAM memory device Aug. 26, 2008
7416940 Methods for fabricating flash memory devices Aug. 26, 2008
7416939 Conductive spacers extended floating gates Aug. 26, 2008
7416935 Method of manufacturing nonvolatile semiconductor memory device having adjacent selection transistors connected together Aug. 26, 2008



 
 
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