Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate) > Patents

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Class Information
Number: 438/257
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Having additional gate electrode surrounded by dielectric (i.e., floating gate)
Description: Process for making an insulated gate field effect transistor wherein an additional gate electrode completely separated by dielectric from a first insulated gate electrode is formed.

Sub-classes under this class:

Class Number	Class Name	Patents
438/266	Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)	590
438/258	Including additional field effect transistor (e.g., sense or access transistor, etc.)	959
438/262	Including elongated source or drain region disposed under thick oxide regions (e.g., buried or diffused bitline, etc.)	285
438/259	Including forming gate electrode in trench or recess in substrate	703
438/261	Multiple interelectrode dielectrics or nonsilicon compound gate insulator	599
438/265	Oxidizing sidewall of gate electrode	254
438/260	Textured surface of gate insulator or gate electrode	177
438/264	Tunneling insulator	826

Patents under this class:

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Patent Number	Title Of Patent	Date Issued
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7588983	EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same	Sep. 15, 2009
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7585746	Process integration scheme of SONOS technology	Sep. 8, 2009
7585726	Nonvolatile semiconductor memory devices and the fabrication process of them	Sep. 8, 2009
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7582930	Non-volatile memory and method for manufacturing non-volatile memory	Sep. 1, 2009
7582530	Managing floating gate-to-floating gate spacing to support scalability	Sep. 1, 2009
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