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Class Information
Number: 438/247
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Including passive device (e.g., resistor, capacitor, etc.) > Capacitor > Trench capacitor > Including doping of trench surfaces > Multiple doping steps
Description: Process utilizing plural steps of introducing electrically active dopant species into the trench surfaces.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8557657 Retrograde substrate for deep trench capacitors Oct. 15, 2013
8492221 Method for fabricating power semiconductor device with super junction structure Jul. 23, 2013
8372710 Vertical transistors Feb. 12, 2013
8324014 Process for depositing boron compounds by CVD or PVD Dec. 4, 2012
8133781 Method of forming a buried plate by ion implantation Mar. 13, 2012
7951682 Method for fabricating capacitor in semiconductor device May. 31, 2011
7902020 Semiconductor device and method of manufacturing the same Mar. 8, 2011
7883984 Method of manufacturing flash memory device Feb. 8, 2011
7871881 Method for fabrication of a capacitor, and a monolithically integrated circuit comprising such a capacitor Jan. 18, 2011
7863130 Tunable stressed polycrystalline silicon on dielectrics in an integrated circuit Jan. 4, 2011
7803701 Method for fabricating a semiconductor device Sep. 28, 2010
7785996 Nonvolatile memory device and method of manufacturing the same Aug. 31, 2010
7713814 Hybrid orientation substrate compatible deep trench capacitor embedded DRAM May. 11, 2010
7709365 CMOS well structure and method of forming the same May. 4, 2010
7682897 DRAM fabrication method using oxidation spacers on pillar dielectric sidewalls Mar. 23, 2010
7470948 Memory cell array structures in NAND flash memory devices Dec. 30, 2008
7348235 Semiconductor device and method of manufacturing the same Mar. 25, 2008
7282406 Method of forming an MOS transistor and structure therefor Oct. 16, 2007
7166890 Superjunction device with improved ruggedness Jan. 23, 2007
7157328 Selective etching to increase trench surface area Jan. 2, 2007
7148103 Multilevel poly-Si tiling for semiconductor circuit manufacture Dec. 12, 2006
7098100 Trench capacitor and method for preparing the same Aug. 29, 2006
7045417 Method of manufacturing semiconductor device May. 16, 2006
7015091 Integration of silicon carbide into DRAM cell to improve retention characteristics Mar. 21, 2006
6987044 Volatile memory structure and method for forming the same Jan. 17, 2006
6962847 Method for forming a self-aligned buried strap in a vertical memory cell Nov. 8, 2005
6953725 Method for fabricating memory device having a deep trench capacitor Oct. 11, 2005
6946344 Method for forming trench capacitor Sep. 20, 2005
6927123 Method for forming a self-aligned buried strap in a vertical memory cell Aug. 9, 2005
6908859 Low leakage power transistor and method of forming Jun. 21, 2005
6902982 Trench capacitor and process for preventing parasitic leakage Jun. 7, 2005
6893921 Nonvolatile memories with a floating gate having an upward protrusion May. 17, 2005
6875653 DRAM cell structure with buried surrounding capacitor and process for manufacturing the same Apr. 5, 2005
6872621 Method for removal of hemispherical grained silicon in a deep trench Mar. 29, 2005
6838335 Method for fabricating a vertical transistor, and semiconductor memory cell having a trench capacitor and an associated vertical selection transistor Jan. 4, 2005
6828191 Trench capacitor with an insulation collar and method for producing a trench capacitor Dec. 7, 2004
6821842 [DRAM structure and fabricating method thereof] Nov. 23, 2004
6770529 EDMOS device having a lattice type drift region and method of manufacturing the same Aug. 3, 2004
6767787 Methods of forming integrated circuits using masks to provide ion implantation shielding to portions of a substrate adjacent to an isolation region therein Jul. 27, 2004
6706577 Formation of dual gate oxide by two-step wet oxidation Mar. 16, 2004
6635526 Structure and method for dual work function logic devices in vertical DRAM process Oct. 21, 2003
6586300 Spacer assisted trench top isolation for vertical DRAM's Jul. 1, 2003
6569728 Method for manufacturing a capacitor for use in a semiconductor device May. 27, 2003
6500707 Method for manufacturing a trench capacitor of a memory cell of a semiconductor memory Dec. 31, 2002
6410383 Method of forming conducting diffusion barriers Jun. 25, 2002
6406945 Method for forming a transistor gate dielectric with high-K and low-K regions Jun. 18, 2002
6399435 Method for producing a DRAM cell with a trench capacitor Jun. 4, 2002
6387744 Process for manufacturing semiconductor integrated circuit device May. 14, 2002
6372573 Self-aligned trench capacitor capping process for high density DRAM cells Apr. 16, 2002
6362040 Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates Mar. 26, 2002

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