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Class Information
Number: 438/243
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Including passive device (e.g., resistor, capacitor, etc.) > Capacitor > Trench capacitor
Description: Process for making an insulated gate field effect transistor combined with a capacitor which is located in a groove in the semiconductor substrate.










Sub-classes under this class:

Class Number Class Name Patents
438/246 Including doping of trench surfaces 241
438/244 Utilizing stacked capacitor structure (e.g., stacked trench, buried stacked capacitor, etc.) 567
438/245 With epitaxial layer formed over the trench 138


Patents under this class:

Patent Number Title Of Patent Date Issued
8703552 Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates Apr. 22, 2014
8679938 Shallow trench isolation for device including deep trench capacitors Mar. 25, 2014
8673719 DRAM with a nanowire access transistor Mar. 18, 2014
8653665 Barrier layer, film forming method, and processing system Feb. 18, 2014
8653596 Integrated circuit including DRAM and SRAM/logic Feb. 18, 2014
8637378 Semiconductor component and methods for producing a semiconductor component Jan. 28, 2014
8637365 Spacer isolation in deep trench Jan. 28, 2014
8629017 Structure and method to form EDRAM on SOI substrate Jan. 14, 2014
8618603 Nonvolatile semiconductor memory device and method for manufacturing same Dec. 31, 2013
8613864 Methods of forming semiconductor constructions Dec. 24, 2013
8609486 Methods for fabricating deep trench capacitors Dec. 17, 2013
8587047 Capacitor formation for a pumping circuit Nov. 19, 2013
8575670 Embedded dynamic random access memory device formed in an extremely thin semiconductor on insulator (ETSOI) substrate Nov. 5, 2013
8575669 Fabricating technique of a highly integrated semiconductor device in which a capacitor is formed between adjacent gate patterns by using a nanotube process Nov. 5, 2013
8569816 Isolated capacitors within shallow trench isolation Oct. 29, 2013
8563377 Trench-based power semiconductor devices with increased breakdown voltage characteristics Oct. 22, 2013
8557657 Retrograde substrate for deep trench capacitors Oct. 15, 2013
8552515 Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps Oct. 8, 2013
8536656 Self-aligned contacts for high k/metal gate process flow Sep. 17, 2013
8530330 Method for manufacturing a semiconductor device capable of preventing the decrease of the width of an active region Sep. 10, 2013
8530312 Vertical devices and methods of forming Sep. 10, 2013
8524568 Semiconductor device having capacitor capable of reducing additional processes and its manufacture method Sep. 3, 2013
8519484 Semiconductor devices having dual trench, methods of fabricating the same, and electronic system having the same Aug. 27, 2013
8507915 Low resistance embedded strap for a trench capacitor Aug. 13, 2013
8507342 Semiconductor device with buried bit lines and method for fabricating the same Aug. 13, 2013
8502294 Semiconductor process and semiconductor structure for memory array with buried digit lines (BDL) Aug. 6, 2013
8502293 Capacitor with recessed plate portion for dynamic random access memory (DRAM) and method to form the same Aug. 6, 2013
8501561 Method for producing a semiconductor component arrangement comprising a trench transistor Aug. 6, 2013
8492820 Integrated circuit and a method using integrated process steps to form deep trench isolation structures and deep trench capacitor structures for the integrated circuit Jul. 23, 2013
8492817 Highly scalable trench capacitor Jul. 23, 2013
8492816 Deep trench decoupling capacitor Jul. 23, 2013
8492241 Method for simultaneously forming a through silicon via and a deep trench structure Jul. 23, 2013
8487405 Deep trench capacitor with conformally-deposited conductive layers having compressive stress Jul. 16, 2013
8486800 Trench capacitor and method for producing the same Jul. 16, 2013
8476688 Semiconductor device and method for manufacturing the same,which prevents leaning of a storage node when forming a capacitor having a plurality of storage nodes of "L" or "+" shape support pat Jul. 2, 2013
8470668 Method for forming pillar type capacitor of semiconductor device Jun. 25, 2013
8455979 Three dimensional integrated deep trench decoupling capacitors Jun. 4, 2013
8455327 Trench capacitor with spacer-less fabrication process Jun. 4, 2013
8450214 Methods of etching single crystal silicon May. 28, 2013
8441097 Methods to form memory devices having a capacitor with a recessed electrode May. 14, 2013
8440523 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch May. 14, 2013
8426321 Weak-link capacitor Apr. 23, 2013
8426268 Embedded DRAM memory cell with additional patterning layer for improved strap formation Apr. 23, 2013
8420479 Semiconductor device comprising a capacitor formed in the contact level Apr. 16, 2013
8410535 Capacitor and manufacturing method thereof Apr. 2, 2013
8409962 Manufacturing method of copper interconnection structure with MIM capacitor Apr. 2, 2013
8399321 Method for manufacturing memory device Mar. 19, 2013
8350311 Semiconductor device Jan. 8, 2013
8343844 Method for manufacturing capacitor of semiconductor device and capacitor of semiconductor device manufactured thereby Jan. 1, 2013
8343829 Recessed-gate transistor device having a dielectric layer with multi thicknesses and method of making the same Jan. 1, 2013











 
 
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