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Class Information
Number: 438/236
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Including bipolar transistor (i.e., bimos) > Lateral bipolar transistor
Description: Process for making an insulated gate field effect transistor combined with a bipolar transistor which has a horizontal-type structure resulting in current flow between its emitter and collector regions parallel to a major surface of the semiconductor substrate.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8546917 Electrostatic discharge protection having parallel NPN and PNP bipolar junction transistors Oct. 1, 2013
8482081 Semiconductor apparatus and manufacturing method thereof Jul. 9, 2013
8431450 Methods and apparatus for LDMOS transistors Apr. 30, 2013
8415764 High-voltage BJT formed using CMOS HV processes Apr. 9, 2013
8330219 Semiconductor device with high-voltage breakdown protection Dec. 11, 2012
8247287 Method of fabricating a deep trench insulated gate bipolar transistor Aug. 21, 2012
8236642 Fully isolated high-voltage MOS device Aug. 7, 2012
8124466 Process for manufacturing voltage-controlled transistor Feb. 28, 2012
8048734 Bipolar transistor and method for making same Nov. 1, 2011
8021951 Formation of longitudinal bipolar transistor with base region in trenches having emitter and collector regions disposed along portions of side surfaces of base region Sep. 20, 2011
8017476 Method for manufacturing a junction field effect transistor having a double gate Sep. 13, 2011
7935605 Lateral resurf NPN with high holding voltage for ESD applications May. 3, 2011
7871882 Method of fabricating a deep trench insulated gate bipolar transistor Jan. 18, 2011
7868378 Methods and apparatus for LDMOS transistors Jan. 11, 2011
7838376 Non-destructive inline epi pattern shift monitor using selective epi Nov. 23, 2010
7829405 Lateral bipolar transistor with compensated well regions Nov. 9, 2010
7638389 Semiconductor device capacitor fabrication method Dec. 29, 2009
7585720 Dual stress liner device and method Sep. 8, 2009
7351620 Methods of forming semiconductor constructions Apr. 1, 2008
7276744 Semiconductor device and method of manufacturing the same Oct. 2, 2007
7169654 Method of forming a semiconductor device Jan. 30, 2007
7166504 Semiconductor device manufacturing method Jan. 23, 2007
7144767 NFETs using gate induced stress modulation Dec. 5, 2006
6858443 Methods of forming ferroelectric capacitors on protruding portions of conductive plugs having a smaller cross-sectional size than base portions thereof Feb. 22, 2005
6821837 Stack-film trench capacitor and method for manufacturing the same Nov. 23, 2004
6784065 Bipolar transistor with ultra small self-aligned polysilicon emitter and method of forming the transistor Aug. 31, 2004
6780702 Method of reducing device parasitic capacitance using underneath crystallographically selective wet etching Aug. 24, 2004
6767810 Method to increase substrate potential in MOS transistors used in ESD protection circuits Jul. 27, 2004
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation Jul. 27, 2004
6764921 Semiconductor device and method for fabricating the same Jul. 20, 2004
6686233 Integration of high voltage self-aligned MOS components Feb. 3, 2004
6667202 Semiconductor device and method for making the same Dec. 23, 2003
6638807 Technique for gated lateral bipolar transistors Oct. 28, 2003
6569730 High voltage transistor using P+ buried layer May. 27, 2003
6551869 Lateral PNP and method of manufacture Apr. 22, 2003
6537887 Integrated circuit fabrication Mar. 25, 2003
6448125 Electronic power device integrated on a semiconductor material and related manufacturing process Sep. 10, 2002
6436747 Method of fabricating semiconductor device Aug. 20, 2002
6384433 Voltage variable resistor from HBT epitaxial layers May. 7, 2002
6365448 Structure and method for gated lateral bipolar transistors Apr. 2, 2002
6352887 Merged bipolar and CMOS circuit and method Mar. 5, 2002
6316317 Nonvolatile semiconductor memory device including two-transistor type memory cells and its manufacturing method Nov. 13, 2001
6271069 Method of making an article comprising an oxide layer on a GaAs-based semiconductor body Aug. 7, 2001
6265277 Method for making a bipolar transistor for the protection of an integrated circuit against electrostatic discharges Jul. 24, 2001
6245609 High voltage transistor using P+ buried layer Jun. 12, 2001
6235558 Method for fabricating semiconductor device May. 22, 2001
6213869 MOSFET-type device with higher driver current and lower steady state power dissipation Apr. 10, 2001
6165848 Method for the production of a MOS-controlled power semiconductor component Dec. 26, 2000
6159784 Method of producing semiconductor device Dec. 12, 2000
6110523 Method of manufacturing a semiconductor memory device Aug. 29, 2000

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