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Class Information
Number: 438/231
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Self-aligned > Utilizing gate sidewall structure > Plural doping steps
Description: Process including multiple steps of introducing electrically active dopant species into semiconductor regions of the substrate.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8710569 Semiconductor device and manufacturing method thereof Apr. 29, 2014
8703578 Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations Apr. 22, 2014
8691644 Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor Apr. 8, 2014
8685799 RRAM structure at STI with Si-based selector Apr. 1, 2014
8685817 Metal gate structures for CMOS transistor devices having reduced parasitic capacitance Apr. 1, 2014
8652892 Implant damage control by in-situ C doping during sige epitaxy for device applications Feb. 18, 2014
8642418 Method of manufacturing semiconductor device with offset sidewall structure Feb. 4, 2014
8603874 Method of manufacturing semiconductor device Dec. 10, 2013
8603875 CMOS process to improve SRAM yield Dec. 10, 2013
8592290 Cut-very-last dual-EPI flow Nov. 26, 2013
8574979 Method for integrating silicon germanium and carbon doped silicon with source/drain regions in a strained CMOS process flow Nov. 5, 2013
8569152 Cut-very-last dual-epi flow Oct. 29, 2013
8558316 Semiconductor device including metal silicide layer and fabrication method thereof Oct. 15, 2013
8551847 Method for forming metal gate Oct. 8, 2013
8541269 Native devices having improved device characteristics and methods for fabrication Sep. 24, 2013
8541272 Method of manufacturing semiconductor device with offset sidewall structure Sep. 24, 2013
8518771 Method for manufacturing solid-state imaging device Aug. 27, 2013
8513075 Method for manufacturing a semiconductor device Aug. 20, 2013
8507351 Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation Aug. 13, 2013
8501571 Method of manufacturing semiconductor device having silicon carbide layers containing phosphorus Aug. 6, 2013
8486778 Low resistance source and drain extensions for ETSOI Jul. 16, 2013
8487354 Method for improving selectivity of epi process Jul. 16, 2013
8481383 Method of forming semiconductor device having buffer layer between sidewall insulating film and semiconductor substrate Jul. 9, 2013
8476131 Methods of forming a semiconductor device with recessed source/design regions, and a semiconductor device comprising same Jul. 2, 2013
8470663 Methods of manufacturing a semiconductor device Jun. 25, 2013
8470664 Methods of fabricating a dual polysilicon gate and methods of fabricating a semiconductor device using the same Jun. 25, 2013
8466520 Transistor with an embedded strain-inducing material having a gradually shaped configuration Jun. 18, 2013
8460993 Method for fabricating CMOS image sensor with plasma damage-free photodiode Jun. 11, 2013
8431462 Methods of manufacturing semiconductor devices Apr. 30, 2013
8426266 Stress memorization with reduced fringing capacitance based on silicon nitride in MOS semiconductor devices Apr. 23, 2013
8415213 Method of manufacturing semiconductor device with offset sidewall structure Apr. 9, 2013
8404540 Device and method of reducing junction leakage Mar. 26, 2013
8390073 Transistor structure Mar. 5, 2013
8384158 Chip and electrostatic discharge protection device thereof Feb. 26, 2013
8354720 Embedded stressor for semiconductor structures Jan. 15, 2013
8343827 Semiconductor device and manufacturing method of the same Jan. 1, 2013
8338258 Embedded stressor for semiconductor structures Dec. 25, 2012
8324043 Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layers Dec. 4, 2012
8324042 Integrated complementary low voltage RF-LDMOS Dec. 4, 2012
8324014 Process for depositing boron compounds by CVD or PVD Dec. 4, 2012
8318564 Performance enhancement in transistors comprising high-k metal gate stack by an early extension implantation Nov. 27, 2012
8313993 Semiconductor device and method for fabricating the same Nov. 20, 2012
8304320 Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants Nov. 6, 2012
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8278166 Method of manufacturing complementary metal oxide semiconductor device Oct. 2, 2012
8247279 Method of fabricating semiconductor device using epitaxial growth inhibiting layers Aug. 21, 2012
8247286 Semiconductor device having transistor and method of manufacturing the same Aug. 21, 2012
8236641 Semiconductor device with extension structure and method for fabricating the same Aug. 7, 2012
8207040 Methods of manufacturing semiconductor devices including forming (111) facets in silicon capping layers on source/drain regions Jun. 26, 2012
8207030 Method for producing nMOS and pMOS devices in CMOS processing Jun. 26, 2012

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