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Class Information
Number: 438/222
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Including isolation structure > Dielectric isolation formed by grooving and refilling with dielectric material > With epitaxial semiconductor layer formation
Description: Process for making complementary insulated gate field effect transistors with dielectric isolation formed by grooving and refilling with dielectric material including a step of forming an epitaxial semiconductor layer.

Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8709898 Fabrication method of semiconductor device and fabrication method of dynamic threshold transistor Apr. 29, 2014
8685816 Methods of forming semiconductor devices by forming semiconductor channel region materials prior to forming isolation structures Apr. 1, 2014
8664741 High voltage resistor with pin diode isolation Mar. 4, 2014
8647941 Method of forming semiconductor device Feb. 11, 2014
8643034 Monolithic, optoelectronic semiconductor body and method for the production thereof Feb. 4, 2014
8637373 Transistors and methods of manufacturing the same Jan. 28, 2014
8637959 Vertical parasitic PNP device in a BiCMOS process and manufacturing method of the same Jan. 28, 2014
8618617 Field effect transistor device Dec. 31, 2013
8592271 Metal-gate CMOS device and fabrication method thereof Nov. 26, 2013
8586452 Methods for forming semiconductor device structures Nov. 19, 2013
8518769 Semiconductor device and method of manufacturing the same Aug. 27, 2013
8492234 Field effect transistor device Jul. 23, 2013
8470660 Method of manufacturing a semiconductor device Jun. 25, 2013
8467192 Method for producing a rollable web and a rollable web Jun. 18, 2013
8445332 Single crystal silicon rod fabrication methods and a single crystal silicon rod structure May. 21, 2013
8440017 Method for growing group 13 nitride crystal and group 13 nitride crystal May. 14, 2013
8426265 Method for growing strain-inducing materials in CMOS circuits in a gate first flow Apr. 23, 2013
8420475 Parasitic vertical PNP bipolar transistor and its fabrication method in BiCMOS process Apr. 16, 2013
8409928 Method for making contactless portable objects Apr. 2, 2013
8405160 Multi-strained source/drain structures Mar. 26, 2013
8395217 Isolation in CMOSFET devices utilizing buried air bags Mar. 12, 2013
8338894 Increased depth of drain and source regions in complementary transistors by forming a deep drain and source region prior to a cavity etch Dec. 25, 2012
8329531 Strain memorization in strained SOI substrates of semiconductor devices Dec. 11, 2012
8329532 Process for the simultaneous deposition of crystalline and amorphous layers with doping Dec. 11, 2012
8324047 Method and structure of an integrated CMOS and MEMS device using air dielectric Dec. 4, 2012
8324539 Wide waveguide applicator Dec. 4, 2012
8273620 Semiconductor integrated circuit device and related fabrication method Sep. 25, 2012
8247279 Method of fabricating semiconductor device using epitaxial growth inhibiting layers Aug. 21, 2012
8247282 Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Aug. 21, 2012
8232180 Manufacturing method of semiconductor device comprising active region divided by STI element isolation structure Jul. 31, 2012
8226836 Mirror and mirror layer for optical modulator and method Jul. 24, 2012
8173502 Formation of active area using semiconductor growth process without STI integration May. 8, 2012
8173496 Method for manufacturing semiconductor device May. 8, 2012
8119471 Semiconductor device and method for manufacturing the same Feb. 21, 2012
8105893 Diffusion sidewall for a semiconductor structure Jan. 31, 2012
8102052 Process for the simultaneous deposition of crystalline and amorphous layers with doping Jan. 24, 2012
8084318 Methods of fabricating integrated circuit devices including strained channel regions and related devices Dec. 27, 2011
8076197 Image sensor and method for fabricating the same Dec. 13, 2011
8053304 Method of forming high-mobility devices including epitaxially growing a semiconductor layer on a dislocation-blocking layer in a recess formed in a semiconductor substrate Nov. 8, 2011
8017472 CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof Sep. 13, 2011
7994017 Method of manufacturing silicon carbide self-aligned epitaxial MOSFET for high powered device applications Aug. 9, 2011
7993998 CMOS devices having dual high-mobility channels Aug. 9, 2011
7989298 Transistor having V-shaped embedded stressor Aug. 2, 2011
7985642 Formation of active area using semiconductor growth process without STI integration Jul. 26, 2011
7972921 Integrated circuit isolation system Jul. 5, 2011
7972971 Method for producing Si.sub.1-yGe.sub.y based zones with different contents in Ge on a same substrate by condensation of germanium Jul. 5, 2011
7964910 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Jun. 21, 2011
7951656 Method for manufacturing semiconductor device May. 31, 2011
7947552 Process for the simultaneous deposition of crystalline and amorphous layers with doping May. 24, 2011
7939422 Methods of thin film process May. 10, 2011

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