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Class Information
Number: 438/217
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
Description: Process having a step of introducing an electrically active dopant species into the semiconductor active channel region beneath the gate insulator of at least one of the complementary insulated gate field effect transistors.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8691653 Semiconductor structure with reduced surface field effect and manufacturing process thereof Apr. 8, 2014
8680623 Techniques for enabling multiple V.sub.t devices using high-K metal gate stacks Mar. 25, 2014
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Mar. 18, 2014
8659054 Method and structure for pFET junction profile with SiGe channel Feb. 25, 2014
8647939 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Feb. 11, 2014
8642418 Method of manufacturing semiconductor device with offset sidewall structure Feb. 4, 2014
8643117 Semiconductor device, method for manufacturing same, and semiconductor storage device Feb. 4, 2014
8633550 Semiconductor device Jan. 21, 2014
8633083 Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant Jan. 21, 2014
8609496 Method of fabricating semiconductor device comprising a dummy well Dec. 17, 2013
8610220 Semiconductor device with self-aligned interconnects Dec. 17, 2013
8592270 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Nov. 26, 2013
8580632 Semiconductor device and method of manufacturing same Nov. 12, 2013
8574976 Semiconductor device and manufacturing method thereof Nov. 5, 2013
8574977 Method for manufacturing stack structure of PMOS device and adjusting gate work function Nov. 5, 2013
8569128 Semiconductor structure and method of fabrication thereof with mixed metal types Oct. 29, 2013
8569800 Field effect transistor Oct. 29, 2013
8557652 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Oct. 15, 2013
8541272 Method of manufacturing semiconductor device with offset sidewall structure Sep. 24, 2013
8536000 Method for producing a semiconductor device have fin-shaped semiconductor regions Sep. 17, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8518781 Semiconductor device and manufacturing method thereof Aug. 27, 2013
8492848 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Jul. 23, 2013
8470656 Semiconductor device and method of manufacturing the same Jun. 25, 2013
8445969 High pressure deuterium treatment for semiconductor/high-K insulator interface May. 21, 2013
8421163 Power module Apr. 16, 2013
8420490 High-performance semiconductor device and method of manufacturing the same Apr. 16, 2013
8415215 Method of manufacturing semiconductor device with multiple implantation steps Apr. 9, 2013
8415213 Method of manufacturing semiconductor device with offset sidewall structure Apr. 9, 2013
8415216 Multi-gate non-planar field effect transistor structure and method of forming the structure using a dopant implant process to tune device drive current Apr. 9, 2013
8390063 Semiconductor device having a lightly doped semiconductor gate and method for fabricating same Mar. 5, 2013
8389369 Electronic device including a doped region disposed under and having a higher dopant concentration than a channel region and a process of forming the same Mar. 5, 2013
8384160 Semiconductor device and method of manufacturing same Feb. 26, 2013
8377772 CMOS integration method for optimal IO transistor V.sub.T Feb. 19, 2013
8373199 Semiconductor device having a SiGe feature and a metal gate stack Feb. 12, 2013
8354309 Method of providing threshold voltage adjustment through gate dielectric stack modification Jan. 15, 2013
8343826 Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloys Jan. 1, 2013
8330227 Integrated semiconductor structure for SRAM and fabrication methods thereof Dec. 11, 2012
8330232 Nonvolatile memory device and method of forming the same Dec. 11, 2012
8324628 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same Dec. 4, 2012
8318523 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same Nov. 27, 2012
8299546 Semiconductor devices with vertical extensions for lateral scaling Oct. 30, 2012
8298894 Work function adjustment in high-k metal gate electrode structures by selectively removing a barrier layer Oct. 30, 2012
8298884 Method to reduce threshold voltage variability with through gate well implant Oct. 30, 2012
8299530 Structure and method to fabricate pFETS with superior GIDL by localizing workfunction Oct. 30, 2012
8293599 Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials Oct. 23, 2012
8288222 Application of cluster beam implantation for fabricating threshold voltage adjusted FETs Oct. 16, 2012
8273619 Methods of implanting dopant into channel regions Sep. 25, 2012
8268662 Fabricating method of complementary metal-oxide-semiconductor (CMOS) image sensor Sep. 18, 2012
8264020 Static RAM cell design and multi-contact regime for connecting double channel transistors Sep. 11, 2012

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