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Class Information
Number: 438/217
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.)
Description: Process having a step of introducing an electrically active dopant species into the semiconductor active channel region beneath the gate insulator of at least one of the complementary insulated gate field effect transistors.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7595532 |
Semiconductor memory devices and methods of forming the same |
Sep. 29, 2009 |
| 7579226 |
Thin layer element and associated fabrication process |
Aug. 25, 2009 |
| 7569449 |
Processes providing high and low threshold p-type and n-type transistors |
Aug. 4, 2009 |
| 7569445 |
Semiconductor device with constricted current passage |
Aug. 4, 2009 |
| 7563682 |
LDMOS transistor device, integrated circuit, and fabrication method thereof |
Jul. 21, 2009 |
| 7560312 |
Void formation for semiconductor junction capacitance reduction |
Jul. 14, 2009 |
| 7550357 |
Semiconductor device and fabricating method thereof |
Jun. 23, 2009 |
| 7531404 |
Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer |
May. 12, 2009 |
| 7528030 |
Semiconductor device comprising at least one MOS transistor having an etch stop layer, and corresponding fabrication process |
May. 5, 2009 |
| 7521311 |
Semiconductor device and method for fabricating the same |
Apr. 21, 2009 |
| 7504327 |
Method of manufacturing thin film semiconductor device |
Mar. 17, 2009 |
| 7491606 |
Semiconductor device and method for fabricating the same |
Feb. 17, 2009 |
| 7488635 |
Semiconductor structure with reduced gate doping and methods for forming thereof |
Feb. 10, 2009 |
| 7479418 |
Methods of applying substrate bias to SOI CMOS circuits |
Jan. 20, 2009 |
| 7473591 |
Transistor with strain-inducing structure in channel |
Jan. 6, 2009 |
| 7470972 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress |
Dec. 30, 2008 |
| 7449379 |
Semiconductor device and method for fabricating the same |
Nov. 11, 2008 |
| 7446003 |
Manufacturing process for lateral power MOS transistors |
Nov. 4, 2008 |
| 7442600 |
Methods of forming threshold voltage implant regions |
Oct. 28, 2008 |
| 7432141 |
Large-grain p-doped polysilicon films for use in thin film transistors |
Oct. 7, 2008 |
| 7413946 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Aug. 19, 2008 |
| 7407850 |
N+ poly on high-k dielectric for semiconductor devices |
Aug. 5, 2008 |
| 7402495 |
Method for manufacturing a semiconductor device |
Jul. 22, 2008 |
| 7390719 |
Method of manufacturing a semiconductor device having a dual gate structure |
Jun. 24, 2008 |
| 7368342 |
Semiconductor device and method of manufacturing the same |
May. 6, 2008 |
| 7364957 |
Method and apparatus for semiconductor device with improved source/drain junctions |
Apr. 29, 2008 |
| 7361540 |
Method of reducing noise disturbing a signal in an electronic device |
Apr. 22, 2008 |
| 7354817 |
Semiconductor device, manufacturing method thereof, and CMOS integrated circuit device |
Apr. 8, 2008 |
| 7351627 |
Method of manufacturing semiconductor device using gate-through ion implantation |
Apr. 1, 2008 |
| 7329570 |
Method for manufacturing a semiconductor device |
Feb. 12, 2008 |
| 7329910 |
Semiconductor substrates and field effect transistor constructions |
Feb. 12, 2008 |
| 7329583 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Feb. 12, 2008 |
| 7297583 |
Method of making strained channel CMOS transistors having lattice-mismatched epitaxial |
Nov. 20, 2007 |
| 7297584 |
Methods of fabricating semiconductor devices having a dual stress liner |
Nov. 20, 2007 |
| 7291527 |
Work function control of metals |
Nov. 6, 2007 |
| 7279430 |
Process for fabricating a strained channel MOSFET device |
Oct. 9, 2007 |
| 7276431 |
Method of fabricating isolated semiconductor devices in epi-less substrate |
Oct. 2, 2007 |
| 7268033 |
Method and structure for providing tuned leakage current in CMOS integrated circuits |
Sep. 11, 2007 |
| 7265011 |
Method of manufacturing a transistor |
Sep. 4, 2007 |
| 7265012 |
Formation of standard voltage threshold and low voltage threshold MOSFET devices |
Sep. 4, 2007 |
| 7259072 |
Shallow low energy ion implantation into pad oxide for improving threshold voltage stability |
Aug. 21, 2007 |
| 7244642 |
Method to obtain fully silicided gate electrodes |
Jul. 17, 2007 |
| 7238563 |
Semiconductor device having isolation region and method of manufacturing the same |
Jul. 3, 2007 |
| 7232733 |
Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein |
Jun. 19, 2007 |
| 7223646 |
Manufacturing method of semiconductor device suppressing short-channel effect |
May. 29, 2007 |
| 7223663 |
MOS transistors and methods of manufacturing the same |
May. 29, 2007 |
| 7220636 |
Process for controlling performance characteristics of a negative differential resistance (NDR) device |
May. 22, 2007 |
| 7217612 |
Manufacturing method for a semiconductor device with reduced local current |
May. 15, 2007 |
| 7217622 |
Semiconductor device and method of manufacturing the semiconductor device |
May. 15, 2007 |
| 7217624 |
Non-volatile memory device with conductive sidewall spacer and method for fabricating the same |
May. 15, 2007 |
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