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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
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Patent Number Title Of Patent Date Issued
7250654 Non-volatile memory device Jul. 31, 2007
7244641 Process sequence and mask layout to reduce junction leakage for a dual gate MOSFET device Jul. 17, 2007
7244645 Methods of forming electronic devices including high-k dielectric layers and electrode barrier layers and related structures Jul. 17, 2007
7242055 Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide Jul. 10, 2007
7238997 Semiconductor device and method of manufacturing the same Jul. 3, 2007
7235440 Formation of ultra-thin oxide layers by self-limiting interfacial oxidation Jun. 26, 2007
7232717 Method of manufacturing non-volatile DRAM Jun. 19, 2007
7233035 Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound Jun. 19, 2007
7226831 Device with scavenging spacer layer Jun. 5, 2007
7226830 Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formation Jun. 5, 2007
7223646 Manufacturing method of semiconductor device suppressing short-channel effect May. 29, 2007
7223649 Method of fabricating transistor of DRAM semiconductor device May. 29, 2007
7220634 NROM memory cell, memory array, related devices and methods May. 22, 2007
7220635 Method for making a semiconductor device with a metal gate electrode that is formed on an annealed high-k gate dielectric layer May. 22, 2007
7217611 Methods for integrating replacement metal gate structures May. 15, 2007
7217601 High-yield single-level gate charge-coupled device design and fabrication May. 15, 2007
7214578 Method for fabricating semiconductor device May. 8, 2007
7208366 Bonding gate oxide with high-k additives Apr. 24, 2007
7205218 Method including forming gate dielectrics having multiple lanthanide oxide layers Apr. 17, 2007
7202535 Manufacturing method for an integrated semiconductor structure and corresponding integrated semiconductor structure Apr. 10, 2007
7202150 Semiconductor memory device and manufacturing method therefor Apr. 10, 2007
7198999 Flash memory device having a graded composition, high dielectric constant gate insulator Apr. 3, 2007
7199421 Sonos device and methods of manufacturing the same Apr. 3, 2007
7192824 Lanthanide oxide / hafnium oxide dielectric layers Mar. 20, 2007
7187045 Junction field effect metal oxide compound semiconductor integrated transistor devices Mar. 6, 2007
7186608 Masked nitrogen enhanced gate oxide Mar. 6, 2007
7186605 Method of fabricating gates Mar. 6, 2007
7183143 Method for forming nitrided tunnel oxide layer Feb. 27, 2007
7179701 Transistor with high dielectric constant gate and method for forming the same Feb. 20, 2007
7179702 Semiconductor device including metal insulator semiconductor field effect transistor and method of manufacturing the same Feb. 20, 2007
7176484 Use of an energy source to convert precursors into patterned semiconductors Feb. 13, 2007
7176084 Self-aligned conductive spacer process for sidewall control gate of high-speed random access memory Feb. 13, 2007
7176079 Method of fabricating a semiconductor device with a wet oxidation with steam process Feb. 13, 2007
7172935 Method of forming multiple gate insulators on a strained semiconductor heterostructure Feb. 6, 2007
7169674 Complementary metal oxide semiconductor (CMOS) gate stack with high dielectric constant gate dielectric and integrated diffusion barrier Jan. 30, 2007
7166185 Forming system for insulation film Jan. 23, 2007
7166505 Method for making a semiconductor device having a high-k gate dielectric Jan. 23, 2007
7163855 Method for manufacturing semiconductor devices Jan. 16, 2007
7160779 Method for making a semiconductor device having a high-k gate dielectric Jan. 9, 2007
7157378 Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode Jan. 2, 2007
7157337 Method of manufacturing a semiconductor device and semiconductor device obtained by means of such a method Jan. 2, 2007
7153734 CMOS device with metal and silicide gate electrodes and a method for making it Dec. 26, 2006
7148099 Reducing the dielectric constant of a portion of a gate dielectric Dec. 12, 2006
7144767 NFETs using gate induced stress modulation Dec. 5, 2006
7132336 Method and apparatus for forming a memory structure having an electron affinity region Nov. 7, 2006
7129551 Electronic component having a praseodymium oxide layer and process for fabricating same Oct. 31, 2006
7129136 Semiconductor memory device and manufacturing method thereof Oct. 31, 2006
7125762 Compensating the workfunction of a metal gate transistor for abstraction by the gate dielectric layer Oct. 24, 2006
7122415 Atomic layer deposition of interpoly oxides in a non-volatile memory device Oct. 17, 2006
7118949 Semiconductor integrated circuit device and method for manufacturing the same Oct. 10, 2006

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