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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
7659160 Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same Feb. 9, 2010
7655517 Spin polarization amplifying transistor Feb. 2, 2010
7655943 Organic electroluminescent display device having OTFT and method of fabricating the same Feb. 2, 2010
7652324 NAND type dual bit nitride read only memory and method for fabricating the same Jan. 26, 2010
7648882 SONOS flash memory and method for fabricating the same Jan. 19, 2010
7648871 Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabricating same Jan. 19, 2010
7642200 Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same Jan. 5, 2010
7635628 Nonvolatile memory device and method of manufacturing the same Dec. 22, 2009
7635633 Non-volatile memory device and method of manufacturing the same Dec. 22, 2009
7632731 Semiconductor device and method for fabricating the same Dec. 15, 2009
7629641 Band engineered nano-crystal non-volatile memory device utilizing enhanced gate injection Dec. 8, 2009
7629243 Method for manufacturing semiconductor device Dec. 8, 2009
7615438 Lanthanide yttrium aluminum oxide dielectric films Nov. 10, 2009
7605067 Method of manufacturing non-volatile memory device Oct. 20, 2009
7601578 Defect control in gate dielectrics Oct. 13, 2009
7602009 Erasable non-volatile memory device using hole trapping in high-K dielectrics Oct. 13, 2009
7602012 Semiconductor memory devices with charge traps Oct. 13, 2009
7592666 Semiconductor memory Sep. 22, 2009
7588989 Dielectric multilayer structures of microelectronic devices and methods for fabricating the same Sep. 15, 2009
7579231 Semiconductor device and method of manufacturing the same Aug. 25, 2009
7572735 Blanket resist to protect active side of semiconductor Aug. 11, 2009
7566667 Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby Jul. 28, 2009
7566608 Methods of forming thin layers including zirconium hafnium oxide and methods of forming gate structures, capacitors, and flash memory devices using the same Jul. 28, 2009
7566604 Method of fabricating a dual-gate structure that prevents cut-through and lowered mobility Jul. 28, 2009
7564114 Semiconductor devices and methods of manufacture thereof Jul. 21, 2009
7550802 Nonvolatile semiconductor memory device and manufacturing process of the same Jun. 23, 2009
7544559 Methods of forming semiconductor constructions Jun. 9, 2009
7541242 NROM memory cell, memory array, related devices and methods Jun. 2, 2009
7531405 Method of manufacturing a dielectric layer and corresponding semiconductor device May. 12, 2009
7531404 Semiconductor device having a metal gate electrode formed on an annealed high-k gate dielectric layer May. 12, 2009
7531399 Semiconductor devices and methods with bilayer dielectrics May. 12, 2009
7528044 CMOSFET with hybrid-strained channels May. 5, 2009
7524720 Method of manufacturing semiconductor device Apr. 28, 2009
7521325 Semiconductor device and method for fabricating the same Apr. 21, 2009
7521345 High-temperature stable gate structure with metallic electrode Apr. 21, 2009
7521359 Interconnect structure encased with high and low k interlevel dielectrics Apr. 21, 2009
7518181 Semiconductor memory device and methods of manufacturing and operating the same Apr. 14, 2009
7510943 Semiconductor devices and methods of manufacture thereof Mar. 31, 2009
7511326 ALD of amorphous lanthanide doped TiO.sub.x films Mar. 31, 2009
7507611 Thin film transistor and method for manufacturing the same Mar. 24, 2009
7507652 Methods of forming a composite dielectric structure and methods of manufacturing a semiconductor device including a composite dielectric structure Mar. 24, 2009
7494879 Method for forming a gate insulating layer of a semiconductor device Feb. 24, 2009
7488640 Aluminum nitride and aluminum oxide/aluminum nitride heterostructure gate dielectric stack based field effect transistors and method for forming same Feb. 10, 2009
7482206 Semiconductor devices having nano-line channels and methods of fabricating the same Jan. 27, 2009
7482223 Multi-thickness dielectric for semiconductor memory Jan. 27, 2009
7482623 Organic semiconductor film and organic semiconductor device Jan. 27, 2009
7479425 Method for forming high-K charge storage device Jan. 20, 2009
7473591 Transistor with strain-inducing structure in channel Jan. 6, 2009
7473640 Reactive gate electrode conductive barrier Jan. 6, 2009
7462533 Memory cell and method for fabricating same Dec. 9, 2008

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