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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14

Patent Number Title Of Patent Date Issued
7829938 High density NAND non-volatile memory device Nov. 9, 2010
7824976 Semiconductor apparatus and method of manufacturing the semiconductor apparatus Nov. 2, 2010
7825043 Method for fabricating capacitor in semiconductor device Nov. 2, 2010
7825477 Semiconductor device with localized stressor Nov. 2, 2010
7820515 Nonvolatile semiconductor memory element excellent in charge retention properties and process for producing the same Oct. 26, 2010
7816244 Insulating buffer film and high dielectric constant semiconductor device and method for fabricating the same Oct. 19, 2010
7816728 Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications Oct. 19, 2010
7811850 Method of operating image sensor Oct. 12, 2010
7812413 MOSFET devices and methods for making them Oct. 12, 2010
7807557 Method of forming a semiconductor device having a trapping film for charge accumulation Oct. 5, 2010
7803678 Method of forming a structure over a semiconductor substrate Sep. 28, 2010
7799670 Plasma oxidation of a memory layer to form a blocking layer in non-volatile charge trap memory devices Sep. 21, 2010
7799629 Memory device and method of manufacturing the same Sep. 21, 2010
7799622 Methods of manufacturing oxide semiconductor thin film transistor Sep. 21, 2010
7795088 Method for manufacturing memory cell Sep. 14, 2010
7795156 Producing method of semiconductor device Sep. 14, 2010
7795159 Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same Sep. 14, 2010
7791129 Semiconductor device and method of producing the same including a charge accumulation layer with differing charge trap surface density Sep. 7, 2010
7790559 Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes Sep. 7, 2010
7790544 Method of fabricating different gate oxides for different transistors in an integrated circuit Sep. 7, 2010
7776731 Method of removing defects from a dielectric material in a semiconductor Aug. 17, 2010
7776757 Method of fabricating high-k metal gate devices Aug. 17, 2010
7772073 Semiconductor device containing a buried threshold voltage adjustment layer and method of forming Aug. 10, 2010
7772072 Method for manufacturing non-volatile memory Aug. 10, 2010
7772062 MOSFET having a channel mechanically stressed by an epitaxially grown, high k strain layer Aug. 10, 2010
7772017 Method of producing a solid state imaging device including using a metal oxide etching stopper Aug. 10, 2010
7759746 Semiconductor device with gate dielectric containing aluminum and mixed rare earth elements Jul. 20, 2010
7759237 Method of forming lutetium and lanthanum dielectric structures Jul. 20, 2010
7759263 Methods for fabricating improved gate dielectrics Jul. 20, 2010
7750418 Introduction of metal impurity to change workfunction of conductive electrodes Jul. 6, 2010
7745272 Method for surfaced-passivated zinc-oxide Jun. 29, 2010
7745278 Selective implementation of barrier layers to achieve threshold voltage control in CMOS device fabrication with high K dielectrics Jun. 29, 2010
7732297 Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer Jun. 8, 2010
7723173 Low temperature polysilicon oxide process for high-K dielectric/metal gate stack May. 25, 2010
7723174 CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor May. 25, 2010
7723242 Enhanced thin-film oxidation process May. 25, 2010
7709316 Method of fabricating gate structure May. 4, 2010
7704821 In-situ nitridation of high-k dielectrics Apr. 27, 2010
7700995 Semiconductor device and display device Apr. 20, 2010
7700423 Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer Apr. 20, 2010
7696036 CMOS transistors with differential oxygen content high-k dielectrics Apr. 13, 2010
7696562 Semiconductor device Apr. 13, 2010
7687358 Methods of forming a gated device Mar. 30, 2010
7683438 Self-aligned double layered silicon-metal nanocrystal memory element, method for fabricating the same, and memory having the memory element Mar. 23, 2010
7682890 Method of fabricating semiconductor device Mar. 23, 2010
7682887 Transistor having high mobility channel and methods Mar. 23, 2010
7678654 Buried bitline with reduced resistance Mar. 16, 2010
7678638 Metal gated ultra short MOSFET devices Mar. 16, 2010
7674714 Method of fabricating semiconductor devices having a gate silicide Mar. 9, 2010
7670894 Selective high-k dielectric film deposition for semiconductor device Mar. 2, 2010

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