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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8426300 Self-aligned contact for replacement gate devices Apr. 23, 2013
8426891 Semiconductor device and method of fabricating the same Apr. 23, 2013
8420466 Method of forming TFT floating gate memory cell structures Apr. 16, 2013
8420477 Method for fabricating a gate dielectric layer and for fabricating a gate structure Apr. 16, 2013
8410540 Non-volatile memory device including a stacked structure and voltage application portion Apr. 2, 2013
8409945 Method of fabricating a charge trapping non-volatile memory cell Apr. 2, 2013
8404533 Metal gate transistor and method for fabricating the same Mar. 26, 2013
8404536 Method for fabricating stacked non-volatile memory with silicon carbide-based amorphous silicon thin film transistors Mar. 26, 2013
8405167 Hafnium tantalum titanium oxide films Mar. 26, 2013
8405192 Low dielectric constant material Mar. 26, 2013
8399934 Transistor device Mar. 19, 2013
8399320 Electronic apparatus containing lanthanide yttrium aluminum oxide Mar. 19, 2013
8394694 Reliability of high-K gate dielectric layers Mar. 12, 2013
8395147 Thin film transistor and method for producing the same Mar. 12, 2013
8377771 Recessed workfunction metal in CMOS transistor gates Feb. 19, 2013
8372703 Gate dielectric first replacement gate processes and integrated circuits therefrom Feb. 12, 2013
8372709 Semiconductor device and method of manufacturing the same Feb. 12, 2013
8367496 Scavanging metal stack for a high-k gate dielectric Feb. 5, 2013
8367495 Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material Feb. 5, 2013
8349680 High-k metal gate CMOS patterning method Jan. 8, 2013
8349681 Ultrahigh density monolithic, three dimensional vertical NAND memory device Jan. 8, 2013
8349695 Work function adjustment in high-k gate stacks including gate dielectrics of different thickness Jan. 8, 2013
8344418 Materials for interfacing high-K dielectric layers with III-V semiconductors Jan. 1, 2013
8343837 Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum Jan. 1, 2013
8343826 Method for forming a transistor comprising high-k metal gate electrode structures including a polycrystalline semiconductor material and embedded strain-inducing semiconductor alloys Jan. 1, 2013
8338874 Flash memory device with an array of gate columns penetrating through a cell stack Dec. 25, 2012
8330227 Integrated semiconductor structure for SRAM and fabrication methods thereof Dec. 11, 2012
8313994 Method for forming a high-K gate stack with reduced effective oxide thickness Nov. 20, 2012
8304306 Fabrication of devices having different interfacial oxide thickness via lateral oxidation Nov. 6, 2012
8304307 Method of fabricating different gate oxides for different transistors in an integrated circuit Nov. 6, 2012
8293599 Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials Oct. 23, 2012
8293596 Formation of a channel semiconductor alloy by depositing a hard mask for the selective epitaxial growth Oct. 23, 2012
8293632 Manufacturing method of semiconductor device Oct. 23, 2012
8288221 Method of manufacturing semiconductor device and semiconductor device Oct. 16, 2012
8288800 Hybrid transistor Oct. 16, 2012
8283225 Enhancing selectivity during formation of a channel semiconductor alloy by a wet oxidation process Oct. 9, 2012
8278165 Methods for protecting film layers while removing hardmasks during fabrication of semiconductor devices Oct. 2, 2012
8278168 Methods of forming a semiconductor device Oct. 2, 2012
8273618 Formation of high-K gate stacks in semiconductor devices Sep. 25, 2012
8268683 Method for reducing interfacial layer thickness for high-K and metal gate stack Sep. 18, 2012
RE43673 Dual gate dielectric scheme: SiON for high performance devices and high K for low power devices Sep. 18, 2012
8253133 Thin film transistor and method for producing the same Aug. 28, 2012
8252654 Method for manufacturing memory cell Aug. 28, 2012
8247282 Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process Aug. 21, 2012
8247285 N-FET with a highly doped source/drain and strain booster Aug. 21, 2012
8241977 Short channel transistor with reduced length variation by using amorphous electrode material during implantation Aug. 14, 2012
8241928 Test structure and method for detecting charge effects during semiconductor processing Aug. 14, 2012
8232154 Method for fabricating semiconductor device Jul. 31, 2012
8227874 Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes Jul. 24, 2012
8202773 Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devices Jun. 19, 2012

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