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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6319857 Method of fabricating stacked N-O-N ultrathin gate dielectric structures Nov. 20, 2001
6316366 Method of polishing using multi-oxidizer slurry Nov. 13, 2001
6303481 Method for forming a gate insulating film for semiconductor devices Oct. 16, 2001
6303418 Method of fabricating CMOS devices featuring dual gate structures and a high dielectric constant gate insulator layer Oct. 16, 2001
6291283 Method to form silicates as high dielectric constant materials Sep. 18, 2001
6284583 Semiconductor device and method of manufacturing the same Sep. 4, 2001
6258673 Multiple thickness of gate oxide Jul. 10, 2001
6258675 High K gate electrode Jul. 10, 2001
6251743 Method of liquid treatment of microstructures comprising bendable structural members Jun. 26, 2001
6251761 Process for polycrystalline silicon gates and high-K dielectric compatibility Jun. 26, 2001
6248635 Process for fabricating a bit-line in a monos device using a dual layer hard mask Jun. 19, 2001
6245605 Method to protect metal from oxidation during poly-metal gate formation in semiconductor device manufacturing Jun. 12, 2001
6245606 Low temperature method for forming a thin, uniform layer of aluminum oxide Jun. 12, 2001
6245652 Method of forming ultra thin gate dielectric for high performance semiconductor devices Jun. 12, 2001
6239006 Native oxide removal with fluorinated chemistry before cobalt silicide formation May. 29, 2001
6238985 Semiconductor device and method for fabricating the same May. 29, 2001
6221712 Method for fabricating gate oxide layer Apr. 24, 2001
6221708 Field effect transistor assemblies, integrated circuitry, and methods of forming field effect transistors and integrated circuitry Apr. 24, 2001
6218227 Method to generate a MONOS type flash cell using polycrystalline silicon as an ONO top layer Apr. 17, 2001
6207472 Low temperature thin film transistor fabrication Mar. 27, 2001
6207486 Semiconductor device and a method of manufacturing the same Mar. 27, 2001
6207485 Integration of high K spacers for dual gate oxide channel fabrication technique Mar. 27, 2001
6200843 High-voltage, high performance FETs Mar. 13, 2001
6171911 Method for forming dual gate oxides on integrated circuits with advanced logic devices Jan. 9, 2001
6168958 Semiconductor structure having multiple thicknesses of high-K gate dielectrics and process of manufacture therefor Jan. 2, 2001
6162687 Method of manufacturing semiconductor device having oxide-nitride gate insulating layer Dec. 19, 2000
6162737 Films doped with carbon for use in integrated circuit technology Dec. 19, 2000
6156610 Process for manufacturing an EEPROM having a peripheral transistor with thick oxide Dec. 5, 2000
6146913 Method for making enhanced performance field effect devices Nov. 14, 2000
6140187 Process for forming metal oxide semiconductors including an in situ furnace gate stack with varying silicon nitride deposition rate Oct. 31, 2000
6133605 Semiconductor nonvolatile memory transistor and method of fabricating the same Oct. 17, 2000
6124158 Method of reducing carbon contamination of a thin dielectric film by using gaseous organic precursors, inert gas, and ozone to react with carbon contaminants Sep. 26, 2000
6114258 Method of oxidizing a substrate in the presence of nitride and oxynitride films Sep. 5, 2000
6114228 Method of making a semiconductor device with a composite gate dielectric layer and gate barrier layer Sep. 5, 2000
6087208 Method for increasing gate capacitance by using both high and low dielectric gate material Jul. 11, 2000
6077763 Process for fabricating a self-aligned contact Jun. 20, 2000
6066521 Method for manufacturing BiMOS device with improvement of high frequency characteristics of bipolar transistor May. 23, 2000
6057217 Process for production of semiconductor device with foreign element introduced into silicon dioxide film May. 2, 2000
6051861 Semiconductor device with reduced fringe capacitance and short channel effect Apr. 18, 2000
6040207 Oxide formation technique using thin film silicon deposition Mar. 21, 2000
6037630 Semiconductor device with gate electrode portion and method of manufacturing the same Mar. 14, 2000
6017786 Method for forming a low barrier height oxide layer on a silicon substrate Jan. 25, 2000
5989948 Methods of forming pairs of transistors, and methods of forming pairs of transistors having different voltage tolerances Nov. 23, 1999
5946551 Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric Aug. 31, 1999
5926729 Method for forming gate oxide layers of various predefined thicknesses Jul. 20, 1999
5917225 Insulated gate field effect transistor having specific dielectric structures Jun. 29, 1999
5872031 Enhancement-depletion logic based on gaas mosfets Feb. 16, 1999
5861347 Method for forming a high voltage gate dielectric for use in integrated circuit Jan. 19, 1999
5861651 Field effect devices and capacitors with improved thin film dielectrics and method for making same Jan. 19, 1999
5846846 Method for making a superconducting field-effect device with grain boundary channel Dec. 8, 1998

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