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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.

Patents under this class:
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Patent Number Title Of Patent Date Issued
6605501 Method of fabricating CMOS device with dual gate electrode Aug. 12, 2003
6602753 Semiconductor device having a gate insulating film comprising a metal oxide and method of manufacturing the same Aug. 5, 2003
6599792 Semiconductor device and method for manufacturing the same Jul. 29, 2003
6597047 Method for fabricating a nonvolatile semiconductor device Jul. 22, 2003
6597046 Integrated circuit with multiple gate dielectric structures Jul. 22, 2003
6593195 Stable memory device that utilizes ion positioning to control state of the memory device Jul. 15, 2003
6586293 Semiconductor device and method of manufacturing the same Jul. 1, 2003
6573134 Dual metal gate CMOS devices and method for making the same Jun. 3, 2003
6570216 EEPROM having a peripheral integrated transistor with thick oxide May. 27, 2003
6563183 Gate array with multiple dielectric properties and method for forming same May. 13, 2003
6544875 Chemical vapor deposition of silicate high dielectric constant materials Apr. 8, 2003
6544873 Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers Apr. 8, 2003
6541395 Semiconductor processing method of forming field effect transistors Apr. 1, 2003
6531354 Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors Mar. 11, 2003
6518634 Strontium nitride or strontium oxynitride gate dielectric Feb. 11, 2003
6514831 Nitride read only memory cell Feb. 4, 2003
6511925 Process for forming high dielectric constant gate dielectric for integrated circuit structure Jan. 28, 2003
6503788 Semiconductor device and method of manufacture thereof Jan. 7, 2003
6495409 MOS transistor having aluminum nitride gate structure and method of manufacturing same Dec. 17, 2002
6492215 Semiconductor device and fabricating the same Dec. 10, 2002
6486682 Determination of dielectric constants of thin dielectric materials in a MOS (metal oxide semiconductor) stack Nov. 26, 2002
6482690 Method for fabricating semiconductor device Nov. 19, 2002
6479336 Method for fabricating semiconductor device Nov. 12, 2002
6472236 Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack Oct. 29, 2002
6468860 Integrated circuit capable of operating at two different power supply voltages Oct. 22, 2002
6469339 Semiconductor memory with voids for suppressing crystal defects Oct. 22, 2002
6468851 Method of fabricating CMOS device with dual gate electrode Oct. 22, 2002
6461906 Method for forming memory cell by using a dummy polysilicon layer Oct. 8, 2002
6458642 Method of fabricating a sonos device Oct. 1, 2002
6455875 Thin film transistor having enhanced field mobility Sep. 24, 2002
6448127 Process for formation of ultra-thin base oxide in high k/oxide stack gate dielectrics of mosfets Sep. 10, 2002
6448126 Method of forming an embedded memory Sep. 10, 2002
6444513 Metal gate stack with etch stop layer having implanted metal species Sep. 3, 2002
6444512 Dual metal gate transistors for CMOS process Sep. 3, 2002
6436771 Method of forming a semiconductor device with multiple thickness gate dielectric layers Aug. 20, 2002
6426307 Method of manufacturing an aluminum oxide film in a semiconductor device Jul. 30, 2002
6423599 Method for fabricating a field effect transistor having dual gates in SOI (semiconductor on insulator) technology Jul. 23, 2002
6417037 Method of dual gate process Jul. 9, 2002
6413861 Method of fabricating a salicide of an embedded memory Jul. 2, 2002
6410387 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry Jun. 25, 2002
6410375 Methods of forming transistors including gate dielectric layers having different nitrogen concentrations Jun. 25, 2002
6406973 Transistor in a semiconductor device and method of manufacturing the same Jun. 18, 2002
6395644 Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARC May. 28, 2002
6391724 Method for manufacturing a gate structure incorporating aluminum oxide as a gate dielectric May. 21, 2002
6387761 Anneal for enhancing the electrical characteristic of semiconductor devices May. 14, 2002
6372581 Process for nitriding the gate oxide layer of a semiconductor device and device obtained Apr. 16, 2002
6365467 Method of forming gate oxide layer in semiconductor device Apr. 2, 2002
6365450 Fabrication of P-channel field effect transistor with minimized degradation of metal oxide gate Apr. 2, 2002
6346442 Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array Feb. 12, 2002
6331443 Method for manufacturing a liquid crystal display Dec. 18, 2001

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