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Class Information
Number: 438/216
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound
Description: Process for making complementary insulated gate field effect transistors wherein the gate dielectric insulator of at least one of the transistors is constructed of plural diverse dielectrics (e.g., nitride and oxide layers, etc.) or of a nonsilicon containing dielectric compound.










Patents under this class:
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Patent Number Title Of Patent Date Issued
6797599 Gate structure and method Sep. 28, 2004
6790719 Process for forming dual metal gate structures Sep. 14, 2004
6787370 Method of forming a weak ferroelectric transistor Sep. 7, 2004
6787440 Method for making a semiconductor device having an ultra-thin high-k gate dielectric Sep. 7, 2004
6780696 Method and apparatus for self-assembly of functional blocks on a substrate facilitated by electrode pairs Aug. 24, 2004
6777296 Semiconductor device and manufacturing method thereof Aug. 17, 2004
6773988 Memory wordline spacer Aug. 10, 2004
6770494 Process of compensating for layer thickness by determining device parameters on different surface areas of a substrate Aug. 3, 2004
6767847 Method of forming a silicon nitride-silicon dioxide gate stack Jul. 27, 2004
6767778 Low dose super deep source/drain implant Jul. 27, 2004
6759709 Nonvolatile semiconductor memory device Jul. 6, 2004
6756259 Gate insulating structure for power devices, and related manufacturing process Jun. 29, 2004
6756647 Semiconductor device including nitride layer Jun. 29, 2004
6750520 Two-bit semiconductor memory with enhanced carrier trapping Jun. 15, 2004
6746905 Thin film transistor and manufacturing process therefor Jun. 8, 2004
6743668 Process for forming a metal oxy-nitride dielectric layer by varying the flow rate of nitrogen into the chamber Jun. 1, 2004
6740549 Gate structures having sidewall spacers using selective deposition and method of forming the same May. 25, 2004
6740944 Dual-oxide transistors for the improvement of reliability and off-state leakage May. 25, 2004
6734068 Method to form silicates as high dielectric constant materials May. 11, 2004
6727134 Method of forming a nitride gate dielectric layer for advanced CMOS devices Apr. 27, 2004
6727132 Method of manufacturing a dual gate semiconductor device with a poly-metal electrode Apr. 27, 2004
6723595 Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants Apr. 20, 2004
6717226 Transistor with layered high-K gate dielectric and method therefor Apr. 6, 2004
6713347 Process for integrating in a same chip a non-volatile memory and a high-performance logic circuitry Mar. 30, 2004
6706581 Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices Mar. 16, 2004
6707082 Ferroelectric transistor Mar. 16, 2004
6699743 Masked nitrogen enhanced gate oxide Mar. 2, 2004
6696327 Method for making a semiconductor device having a high-k gate dielectric Feb. 24, 2004
6696332 Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing Feb. 24, 2004
6696328 CMOS gate electrode using selective growth and a fabrication method thereof Feb. 24, 2004
6689702 High dielectric constant metal oxide gate dielectrics Feb. 10, 2004
6683010 Method for forming silicon-oxynitride layer on semiconductor device Jan. 27, 2004
6683012 Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitride Jan. 27, 2004
6680227 Non-volatile memory device and fabrication method thereof Jan. 20, 2004
6670231 Method of forming a dielectric layer in a semiconductor device Dec. 30, 2003
6660578 High-K dielectric having barrier layer for P-doped devices and method of fabrication Dec. 9, 2003
6660536 Method of making ferroelectric material utilizing anneal in an electrical field Dec. 9, 2003
6657268 Metal gate stack with etch stop layer having implanted metal species Dec. 2, 2003
6657267 Semiconductor device and fabrication technique using a high-K liner for spacer etch stop Dec. 2, 2003
6653184 Method of forming transistors associated with semiconductor substrates comprising forming a nitrogen-comprising region across an oxide region of a transistor gate Nov. 25, 2003
6649543 Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices Nov. 18, 2003
6645801 Salicided gate for virtual ground arrays Nov. 11, 2003
6645799 Method of manufacturing a dual gate semiconductor device with a poly-metal electrode Nov. 11, 2003
6642131 METHOD OF FORMING A SILICON-CONTAINING METAL-OXIDE GATE DIELECTRIC BY DEPOSITING A HIGH DIELECTRIC CONSTANT FILM ON A SILICON SUBSTRATE AND DIFFUSING SILICON FROM THE SUBSTRATE INTO THE HIGH D Nov. 4, 2003
6642095 Methods of fabricating semiconductor devices with barrier layers Nov. 4, 2003
6627491 Method of manufacturing non volatile memory device having two charge storage regions Sep. 30, 2003
6620670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 Sep. 16, 2003
6614081 High-performance MOS transistor of LDD structure having a gate insulating film with a nitride central portion and oxide end portions Sep. 2, 2003
6611031 Semiconductor device and method for its manufacture Aug. 26, 2003
6607952 Semiconductor device with a disposable gate and method of manufacturing the same Aug. 19, 2003

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