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Class Information
Number: 438/214
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > Having underpass or crossunder
Description: Process for making complementary insulated gate field effect transistors having an electrically conductive structure located within the semiconductor substrate which functions to electrically connect the transistors.

Patents under this class:

Patent Number Title Of Patent Date Issued
8581411 Semiconductor device Nov. 12, 2013
8329521 Method and device with gate structure formed over the recessed top portion of the isolation structure Dec. 11, 2012
8241973 Method for increasing penetration depth of drain and source implantation species for a given gate height Aug. 14, 2012
8207031 Mask-saving production of complementary lateral high-voltage transistors with a RESURF structure Jun. 26, 2012
8066891 Wet etchable laminated body, insulation film, and electronic circuit part using the laminated body and the film Nov. 29, 2011
8067291 MOS field-effect transistor and manufacturing method thereof Nov. 29, 2011
8022501 Semiconductor device and method for isolating the same Sep. 20, 2011
7982280 Integrated circuits and interconnect structure for integrated circuits Jul. 19, 2011
7973360 Depletable cathode low charge storage diode Jul. 5, 2011
7888771 E-fuse with scalable filament link Feb. 15, 2011
7759728 Depletable cathode low charge storage diode Jul. 20, 2010
7659616 On-chip cooling systems for integrated circuits Feb. 9, 2010
7629211 Field effect transistor and method of forming a field effect transistor Dec. 8, 2009
7422971 Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby Sep. 9, 2008
7385246 Depletable cathode low charge storage diode Jun. 10, 2008
7338840 Method of forming a semiconductor die with heat and electrical pipes Mar. 4, 2008
7319605 Conductive structure for microelectronic devices and methods of fabricating such structures Jan. 15, 2008
7256462 Semiconductor device Aug. 14, 2007
7176578 Method for processing a thin film substrate Feb. 13, 2007
7091534 Semiconductor device using low dielectric constant material film and method of fabricating the same Aug. 15, 2006
7045409 Semiconductor device having active regions connected together by interconnect layer and method of manufacture thereof May. 16, 2006
6974740 Symmetric inducting device for an integrated circuit having a ground shield Dec. 13, 2005
6900087 Symmetric inducting device for an integrated circuit having a ground shield May. 31, 2005
6897103 MOS integrated circuit with reduced on resistance May. 24, 2005
6879507 Conductive structure for microelectronic devices and methods of fabricating such structures Apr. 12, 2005
6642133 Silicon-on-insulator structure and method of reducing backside drain-induced barrier lowering Nov. 4, 2003
6642149 Plasma processing method Nov. 4, 2003
6635518 SOI FET and method for creating FET body connections with high-quality matching characteristics and no area penalty for partially depleted SOI technologies Oct. 21, 2003
6555482 Process for fabricating a MOS transistor having two gates, one of which is buried and corresponding transistor Apr. 29, 2003
6518628 Integrated CMOS circuit configuration, and production of same Feb. 11, 2003
6514809 SOI field effect transistors with body contacts formed by selective etch and fill Feb. 4, 2003
6503787 Device and method for forming semiconductor interconnections in an integrated circuit substrate Jan. 7, 2003
6495408 Local interconnection process for preventing dopant cross diffusion in shared gate electrodes Dec. 17, 2002
6465293 Method of manufacturing a flash memory cell Oct. 15, 2002
6261908 Buried local interconnect Jul. 17, 2001
6171892 Method of manufacturing a semiconductor integrated circuit device Jan. 9, 2001
4797724 Reducing bipolar parasitic effects in IGFET devices Jan. 10, 1989
4778775 Buried interconnect for silicon on insulator structure Oct. 18, 1988

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