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Class Information
Number: 438/207
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > And additional electrical device > Including bipolar transistor (i.e., bicmos) > Including isolation structure
Description: Process for making complementary insulated gate field effect transistors combined with a bipolar transistor having a structure serving to at least partially electrically isolate the semiconductive region in which one transistor is formed from laterally adjacent semiconductive regions.










Sub-classes under this class:

Class Number Class Name Patents
438/208 Isolation by pn junction only 76


Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8692266 Circuit substrate structure Apr. 8, 2014
8679938 Shallow trench isolation for device including deep trench capacitors Mar. 25, 2014
8673710 Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide mask Mar. 18, 2014
8669590 Methods and apparatus for forming silicon germanium-carbon semiconductor structures Mar. 11, 2014
8669621 Semiconductor device and method of manufacturing semiconductor device Mar. 11, 2014
8642419 Methods of forming isolation structures for semiconductor devices Feb. 4, 2014
8642429 Wide and deep oxide trench in a semiconductor substrate with interspersed vertical oxide ribs Feb. 4, 2014
8609483 Method of building compensated isolated P-well devices Dec. 17, 2013
8610239 Semiconductor device and method of manufacturing the same Dec. 17, 2013
8603873 High-gain bipolar junction transistor compatible with complementary metal-oxide-semiconductor (CMOS) process and method for fabricating the same Dec. 10, 2013
8536002 Bipolar transistor in bipolar-CMOS technology Sep. 17, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8530999 Semiconductor component with isolation trench intersections Sep. 10, 2013
8460992 Semiconductor device and method of manufacturing the same Jun. 11, 2013
8432000 Trench MOS barrier schottky rectifier with a planar surface using CMP techniques Apr. 30, 2013
8415214 STI silicon nitride cap for flat FEOL topology Apr. 9, 2013
8415764 High-voltage BJT formed using CMOS HV processes Apr. 9, 2013
8405156 Semiconductor device and manufacturing method thereof Mar. 26, 2013
8368161 Solid-state image capturing device, method of manufacturing solid-state image capturing device, and image capturing apparatus Feb. 5, 2013
8350336 Semiconductor device and method of manufacturing the same Jan. 8, 2013
8318581 Micro-electromechanical system devices Nov. 27, 2012
8319290 Trench MOS barrier schottky rectifier with a planar surface using CMP techniques Nov. 27, 2012
8278710 Guard ring integrated LDMOS Oct. 2, 2012
8273620 Semiconductor integrated circuit device and related fabrication method Sep. 25, 2012
8264020 Static RAM cell design and multi-contact regime for connecting double channel transistors Sep. 11, 2012
8247297 Method of filling large deep trench with high quality oxide for semiconductor devices Aug. 21, 2012
8242007 Semiconductor device formed using single polysilicon process and method of fabricating the same Aug. 14, 2012
8232157 Semiconductor device and method of manufacturing the same Jul. 31, 2012
8216950 Capacitive element fabrication method Jul. 10, 2012
8187930 Structure and layout of a FET prime cell May. 29, 2012
8183096 Static RAM cell design and multi-contact regime for connecting double channel transistors May. 22, 2012
8115280 Four-terminal gate-controlled LVBJTs Feb. 14, 2012
8105890 Method of forming a semiconductor structure Jan. 31, 2012
8093111 Semiconductor device including partial silicon on insulator fin structure and method for fabricating the same Jan. 10, 2012
8084313 Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor Dec. 27, 2011
8080485 Localized temperature control during rapid thermal anneal Dec. 20, 2011
8053286 Method of forming semiconductor device including trench gate structure Nov. 8, 2011
8030152 Method of fabricating trench-constrained isolation diffusion for semiconductor devices Oct. 4, 2011
8021941 Bias-controlled deep trench substrate noise isolation integrated circuit device structures Sep. 20, 2011
8018006 Semiconductor device having an enlarged space area surrounding an isolation trench for reducing thermal resistance and improving heat dissipation Sep. 13, 2011
8013372 Integrated circuit including a stressed dielectric layer with stable stress Sep. 6, 2011
8003485 Semiconductor device and method of fabricating the same Aug. 23, 2011
7998806 Semiconductor device and method of manufacturing the same Aug. 16, 2011
7998811 Semiconductor device and method for semiconductor device Aug. 16, 2011
7968948 Trench isolation structure in a semiconductor device and method for fabricating the same Jun. 28, 2011
7964461 Method of forming isolation layer in semiconductor device Jun. 21, 2011
7947551 Method of forming a shallow trench isolation structure May. 24, 2011
7939394 Multiple-depth STI trenches in integrated circuit fabrication May. 10, 2011
7897452 Method of producing a semiconductor device with an aluminum or aluminum alloy rear electrode Mar. 1, 2011
7875512 Method for manufacturing semiconductor device Jan. 25, 2011

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