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Class Information
Number: 438/203
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > And additional electrical device > Including bipolar transistor (i.e., bicmos) > Complementary bipolar transistors
Description: Process for making complementary insulated gate field effect transistors combined with a first bipolar transistor which additionally contains a second bipolar transistor which is of opposite conductivity type to the first bipolar transistor.

Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
4256515 Method for making integrated circuit with C-MOS logic, bipolar driver and polysilicon resistors Mar. 17, 1981

1 2 3 4

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