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Class Information
Number: 438/203
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > And additional electrical device > Including bipolar transistor (i.e., bicmos) > Complementary bipolar transistors
Description: Process for making complementary insulated gate field effect transistors combined with a first bipolar transistor which additionally contains a second bipolar transistor which is of opposite conductivity type to the first bipolar transistor.










Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8674455 Semiconductor device Mar. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8648427 Electronic device including an integrated circuit with transistors coupled to each other Feb. 11, 2014
8530298 Radiation hardened integrated circuit Sep. 10, 2013
8507338 Semiconductor structure and fabricating method thereof Aug. 13, 2013
8455315 Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch Jun. 4, 2013
8445970 Bipolar device compatible with CMOS process technology May. 21, 2013
8377770 Method for manufacturing transistor Feb. 19, 2013
8338863 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Dec. 25, 2012
8324713 Profile design for lateral-vertical bipolar junction transistor Dec. 4, 2012
8283730 Negative differential resistance device with high PVCR and fast switching speed and memory using the same Oct. 9, 2012
8232156 Vertical heterojunction bipolar transistors with reduced base-collector junction capacitance Jul. 31, 2012
8181343 Sealed crimp connection methods May. 22, 2012
8173500 Poly-emitter type bipolar junction transistor, bipolar CMOS DMOS device, and manufacturing methods of poly-emitter type bipolar junction transistor and bipolar CMOS DMOS device May. 8, 2012
8114696 CMOS image sensor with asymmetric well structure of source follower Feb. 14, 2012
8115280 Four-terminal gate-controlled LVBJTs Feb. 14, 2012
8067281 Method of fabricating complementary metal-oxide-semiconductor (CMOS) Device Nov. 29, 2011
8063448 Resistive memory and method Nov. 22, 2011
8021939 High-k dielectric and metal gate stack with minimal overlap with isolation region and related methods Sep. 20, 2011
7972919 Vertical PNP transistor and method of making same Jul. 5, 2011
7960796 Semiconductor device having element isolation region Jun. 14, 2011
7888214 Selective stress relaxation of contact etch stop layer through layout design Feb. 15, 2011
7863173 Variable resistance non-volatile memory cells and methods of fabricating same Jan. 4, 2011
7838356 Gate dielectric first replacement gate processes and integrated circuits therefrom Nov. 23, 2010
7803676 Semiconductor device and method of fabricating the same Sep. 28, 2010
7754545 Semiconductor device and method of fabricating the same Jul. 13, 2010
7713829 Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology May. 11, 2010
7701038 High-gain vertex lateral bipolar junction transistor Apr. 20, 2010
7678636 Selective formation of stress memorization layer Mar. 16, 2010
7666732 Method of fabricating a metal gate CMOS with at least a single gate metal and dual gate dielectrics Feb. 23, 2010
7651912 Semiconductor device and method of fabricating the same Jan. 26, 2010
7642154 BiCMOS device and method of manufacturing a biCMOS device Jan. 5, 2010
7611938 Semiconductor device having high drive current and method of manufacture therefor Nov. 3, 2009
7598136 Image sensor and related fabrication method Oct. 6, 2009
7521310 Vertical thyristor in complementary SiGe bipolar process Apr. 21, 2009
7462530 Method for manufacturing a semiconductor device having an element isolation region Dec. 9, 2008
7439140 Formation of standard voltage threshold and low voltage threshold MOSFET devices Oct. 21, 2008
7314791 Bipolar transistor for an integrated circuit having variable value emitter ballast resistors Jan. 1, 2008
7282401 Method and apparatus for a self-aligned recessed access device (RAD) transistor gate Oct. 16, 2007
7271044 CMOS (complementary metal oxide semiconductor) technology Sep. 18, 2007
7265012 Formation of standard voltage threshold and low voltage threshold MOSFET devices Sep. 4, 2007
7265010 High performance vertical PNP transistor method Sep. 4, 2007
7247532 High voltage transistor and method for fabricating the same Jul. 24, 2007
7220633 Method of fabricating a lateral double-diffused MOSFET May. 22, 2007
7098094 NiSi metal gate stacks using a boron-trap Aug. 29, 2006
7056779 Semiconductor power device Jun. 6, 2006
7015551 Semiconductor device and method of fabricating same Mar. 21, 2006
7009259 Semiconductor device and method of fabricating same Mar. 7, 2006
7001806 Semiconductor structure with increased breakdown voltage and method for producing the semiconductor structure Feb. 21, 2006
6995055 Structure of a semiconductor integrated circuit and method of manufacturing the same Feb. 7, 2006

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