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Class Information
Number: 438/201
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos) > And additional electrical device > Including insulated gate field effect transistor having gate surrounded by dielectric (i.e., floating gate)
Description: Process for making complementary insulated gate field effect transistors having combined therewith an additional insulated gate field effect transistor possessing a gate electrode enclosed by dielectric.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8076192 Method of manufacturing a semiconductor device Dec. 13, 2011
8053302 Non-volatile memory device and method of manufacturing same Nov. 8, 2011
8049273 Semiconductor device for improving the peak induced voltage in switching converter Nov. 1, 2011
8043907 Atomic layer deposition processes for non-volatile memory devices Oct. 25, 2011
8043908 Method of fabricating memory Oct. 25, 2011
8043951 Method of manufacturing a semiconductor device and semiconductor device obtainable therewith Oct. 25, 2011
8039345 Methods of forming semiconductor devices Oct. 18, 2011
8039337 Nonvolatile memory device with multiple blocking layers and method of fabricating the same Oct. 18, 2011
8039336 Semiconductor device and method of fabrication thereof Oct. 18, 2011
8030150 Method of fabricating non-volatile memory integrated circuit device and non-volatile memory integrated circuit device fabricated using the same Oct. 4, 2011
8026139 Method of fabricating a non-volatile memory device Sep. 27, 2011
8017467 Semiconductor memory device including multi-layer gate structure Sep. 13, 2011
8012825 Method of manufacturing the double-implant nor flash memory structure Sep. 6, 2011
8008150 Methods of fabricating flash memory devices including substantially uniform tunnel oxide layers Aug. 30, 2011
7998809 Method for forming a floating gate using chemical mechanical planarization Aug. 16, 2011
7977190 Memory devices having reduced interference between floating gates and methods of fabricating such devices Jul. 12, 2011
7968398 Method for producing a floating gate with an alternation of lines of first and second materials Jun. 28, 2011
7968399 Semiconductor device and method of manufacturing the same Jun. 28, 2011
7964459 Non-volatile memory structure and method of fabrication Jun. 21, 2011
7964461 Method of forming isolation layer in semiconductor device Jun. 21, 2011
7951671 Method of fabricating non-volatile memory device having separate charge trap patterns May. 31, 2011
7951662 Method of fabricating strained silicon transistor May. 31, 2011
7943515 Shared masks for x-lines and shared masks for y-lines for fabrication of 3D memory arrays May. 17, 2011
7943467 Structure and method to fabricate MOSFET with short gate May. 17, 2011
7939400 Systems and methods that selectively modify liner induced stress May. 10, 2011
7939401 Dual gate structure, fabrication method for the same, semiconductor device having the same, and semiconductor device fabrication method May. 10, 2011
7923327 Method of fabricating non-volatile memory device with concavely depressed electron injection region Apr. 12, 2011
7923364 Tunnel dielectric comprising nitrogen for use with a semiconductor device and a process for forming the device Apr. 12, 2011
7919368 Area-efficient electrically erasable programmable memory cell Apr. 5, 2011
7919805 Non-volatile memory cell with two capacitors and one PNP transistor and a method of forming such a cell in a 1-poly SOI technology Apr. 5, 2011
7919367 Method to increase charge retention of non-volatile memory manufactured in a single-gate logic process Apr. 5, 2011
7915661 Semiconductor device and fabrication method therefor Mar. 29, 2011
7910424 Semiconductor memory and fabrication method for the same Mar. 22, 2011
7910430 NAND flash memory device and method of manufacturing the same Mar. 22, 2011
7910434 Method of reducing coupling between floating gates in nonvolatile memory Mar. 22, 2011
7897456 Non-volatile memory device and method for fabricating the same Mar. 1, 2011
7897455 Semiconductor device and method of manufacturing the same Mar. 1, 2011
7897448 Formation of high voltage transistor with high breakdown voltage Mar. 1, 2011
7892909 Polysilicon gate formation by in-situ doping Feb. 22, 2011
7892943 Isolation trenches for memory devices Feb. 22, 2011
7879739 Thin transition layer between a group III-V substrate and a high-k gate dielectric layer Feb. 1, 2011
7875516 Integrated circuit including a first gate stack and a second gate stack and a method of manufacturing Jan. 25, 2011
7868395 Metal insulator semiconductor field effect transistor having fin structure Jan. 11, 2011
7867837 Process for manufacturing rounded polysilicon electrodes on semiconductor components Jan. 11, 2011
7863123 Direct contact between high-.kappa./metal gate and wiring process flow Jan. 4, 2011
7863173 Variable resistance non-volatile memory cells and methods of fabricating same Jan. 4, 2011
7863686 Nonvolatile memory devices having a fin shaped active region Jan. 4, 2011
7859040 Non-volatile memory Dec. 28, 2010
7858464 Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation Dec. 28, 2010
7858463 Semiconductor integrated circuit device and method of producing the same Dec. 28, 2010

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