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Class Information
Number: 438/199
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos)
Description: Process for making plural insulated gate field effect transistors of opposite conductivity type (i.e., wherein source and drain regions of a first field effect transistor are of opposite conductivity type to source and drain regions of a second field effect transistor).










Sub-classes under this class:

Class Number Class Name Patents
438/200 And additional electrical device 509
438/233 And contact formation 444
438/213 Common active region 85
438/217 Doping of semiconductor channel region beneath gate insulator (e.g., threshold voltage adjustment, etc.) 560
438/216 Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound 656
438/215 Having fuse or integral short 155
438/211 Having gate surrounded by dielectric (i.e., floating gate) 568
438/214 Having underpass or crossunder 38
438/218 Including isolation structure 338
438/229 Self-aligned 273
438/212 Vertical channel 413


Patents under this class:

Patent Number Title Of Patent Date Issued
8704229 Partial poly amorphization for channeling prevention Apr. 22, 2014
8703594 Semiconductor device having a treated gate structure and fabrication method thereof Apr. 22, 2014
8703551 Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatter Apr. 22, 2014
8691644 Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistor Apr. 8, 2014
8691643 Methods of forming semiconductor devices Apr. 8, 2014
8691642 Method of fabricating semiconductor device including forming epitaxial blocking layers by nitridation process Apr. 8, 2014
8686555 Integrated heater on MEMS cap for wafer scale packaged MEMS sensors Apr. 1, 2014
8685814 Transistor device and method of manufacture thereof Apr. 1, 2014
8685812 Logic switch and circuits utilizing the switch Apr. 1, 2014
8685811 Method for manufacturing a CMOS device having dual metal gate Apr. 1, 2014
8680645 Semiconductor device and a method for forming a semiconductor device Mar. 25, 2014
8680594 Semiconductor constructions and methods of forming semiconductor constructions Mar. 25, 2014
8674909 Light-emitting device Mar. 18, 2014
8674451 N/P metal crystal orientation for high-K metal gate Vt modulation Mar. 18, 2014
8674450 Semiconductor structures and fabrication method Mar. 18, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Mar. 18, 2014
8673712 Power transistor with high voltage counter implant Mar. 18, 2014
8673711 Methods of fabricating a semiconductor device having a high-K gate dielectric layer and semiconductor devices fabricated thereby Mar. 18, 2014
8673710 Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide mask Mar. 18, 2014
8669618 Manufacturing method for semiconductor device having metal gate Mar. 11, 2014
8669590 Methods and apparatus for forming silicon germanium-carbon semiconductor structures Mar. 11, 2014
8669154 Transistor device and method of manufacture thereof Mar. 11, 2014
8669153 Integrating a first contact structure in a gate last process Mar. 11, 2014
8664058 Semiconductor device having silicon on stressed liner (SOL) Mar. 4, 2014
8664057 High-K metal gate electrode structures formed by early cap layer adaptation Mar. 4, 2014
8664055 Fin field-effect transistor structure and manufacturing process thereof Mar. 4, 2014
8658491 Manufacturing method of transistor structure having a recessed channel Feb. 25, 2014
8658489 Method for dual work function metal gate CMOS with selective capping Feb. 25, 2014
8658488 Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip Feb. 25, 2014
8658487 Semiconductor device and fabrication method thereof Feb. 25, 2014
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8653602 Transistor having replacement metal gate and process for fabricating the same Feb. 18, 2014
8652896 Semiconductor memory device and fabrication process thereof Feb. 18, 2014
8652895 Semiconductor memory device and a method of manufacturing the same Feb. 18, 2014
8652887 Multi-layer structures and process for fabricating semiconductor devices Feb. 18, 2014
8647939 Non-relaxed embedded stressors with solid source extension regions in CMOS devices Feb. 11, 2014
8643113 Structure and method for metal gate stack oxygen concentration control using an oxygen diffusion barrier layer and a sacrificial oxygen gettering layer Feb. 4, 2014
8642435 Performing treatment on stressors Feb. 4, 2014
8642426 Semiconductor device and production method therefor Feb. 4, 2014
8642418 Method of manufacturing semiconductor device with offset sidewall structure Feb. 4, 2014
8642417 Method of manufacturing strained source/drain structures Feb. 4, 2014
8642416 Method of forming three dimensional integrated circuit devices using layer transfer technique Feb. 4, 2014
8642415 Semiconductor substrate with transistors having different threshold voltages Feb. 4, 2014
8637357 CMOS Transistor with dual high-k gate dielectric and method of manufacture thereof Jan. 28, 2014
8633480 Semiconductor device having an oxide semiconductor with a crystalline region and manufacturing method thereof Jan. 21, 2014
8629027 Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions Jan. 14, 2014
8629021 Integration scheme for an NMOS metal gate Jan. 14, 2014
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Jan. 14, 2014
8629015 Manufacturing of electronic components Jan. 14, 2014











 
 
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