| |
 |
|
Class Information
Number: 438/199
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Complementary insulated gate field effect transistors (i.e., cmos)
Description: Process for making plural insulated gate field effect transistors of opposite conductivity type (i.e., wherein source and drain regions of a first field effect transistor are of opposite conductivity type to source and drain regions of a second field effect transistor).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8466493 |
Self-aligned III-V field effect transistor (FET), integrated circuit (IC) chip with self-aligned III-V FETS and method of manufacture |
Jun. 18, 2013 |
| 8466473 |
Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs |
Jun. 18, 2013 |
| 8466018 |
Methods of forming a PMOS device with in situ doped epitaxial source/drain regions |
Jun. 18, 2013 |
| 8461652 |
Semiconductor device having an n-channel MOS transistor, a p-channel MOS transistor and a contracting film |
Jun. 11, 2013 |
| 8461049 |
Method for fabricating semiconductor device |
Jun. 11, 2013 |
| 8460991 |
Differentially recessed contacts for multi-gate transistor of SRAM cell |
Jun. 11, 2013 |
| 8460990 |
CMOS transistor using germanium condensation and method of fabricating the same |
Jun. 11, 2013 |
| 8460989 |
Niobium and vanadium organometallic precursors for thin film deposition |
Jun. 11, 2013 |
| 8460981 |
Use of contacts to create differential stresses on devices |
Jun. 11, 2013 |
| 8455314 |
Transistors comprising high-K metal gate electrode structures and embedded strain-inducing semiconductor alloys formed in a late stage |
Jun. 4, 2013 |
| 8450808 |
HVMOS devices and methods for forming the same |
May. 28, 2013 |
| 8450780 |
Solid-state imaging sensor, method of manufacturing the same, and image pickup apparatus |
May. 28, 2013 |
| 8445969 |
High pressure deuterium treatment for semiconductor/high-K insulator interface |
May. 21, 2013 |
| 8441073 |
Semiconductor device and manufacturing method for the same |
May. 14, 2013 |
| 8440559 |
Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer |
May. 14, 2013 |
| 8440532 |
Structure and method for making metal semiconductor field effect transistor (MOSFET) with isolation last process |
May. 14, 2013 |
| 8440530 |
Methods of forming highly scaled semiconductor devices using a disposable spacer technique |
May. 14, 2013 |
| 8440520 |
Diffused cap layers for modifying high-k gate dielectrics and interface layers |
May. 14, 2013 |
| 8440519 |
Semiconductor structures using replacement gate and methods of manufacture |
May. 14, 2013 |
| 8436399 |
Semiconductor device |
May. 7, 2013 |
| 8435850 |
Localized compressive strained semiconductor |
May. 7, 2013 |
| 8435849 |
Method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area |
May. 7, 2013 |
| 8435848 |
PMOS SiGe-last integration process |
May. 7, 2013 |
| 8435841 |
Enhancement of ultraviolet curing of tensile stress liner using reflective materials |
May. 7, 2013 |
| 8426922 |
CMOS structure and latch-up preventing method of same |
Apr. 23, 2013 |
| 8426309 |
Graphene nanoelectric device fabrication |
Apr. 23, 2013 |
| 8426298 |
CMOS devices with Schottky source and drain regions |
Apr. 23, 2013 |
| 8426262 |
Stress adjustment in stressed dielectric materials of semiconductor devices by stress relaxation based on radiation |
Apr. 23, 2013 |
| 8421130 |
Method for manufacturing SRAM devices with reduced threshold voltage deviation |
Apr. 16, 2013 |
| 8420511 |
Transistor and method for forming the same |
Apr. 16, 2013 |
| 8420491 |
Structure and method for replacement metal gate field effect transistors |
Apr. 16, 2013 |
| 8420474 |
Controlling threshold voltage in carbon based field effect transistors |
Apr. 16, 2013 |
| 8420473 |
Replacement gate devices with barrier metal for simultaneous processing |
Apr. 16, 2013 |
| 8420472 |
Systems and methods for integrated circuits comprising multiple body biasing domains |
Apr. 16, 2013 |
| 8420464 |
Spacer as hard mask scheme for in-situ doping in CMOS finFETs |
Apr. 16, 2013 |
| 8420454 |
Three-terminal power device with high switching speed and manufacturing process |
Apr. 16, 2013 |
| 8415731 |
Semiconductor storage device with integrated capacitor and having transistor overlapping sections |
Apr. 9, 2013 |
| 8415216 |
Multi-gate non-planar field effect transistor structure and method of forming the structure using a dopant implant process to tune device drive current |
Apr. 9, 2013 |
| 8415213 |
Method of manufacturing semiconductor device with offset sidewall structure |
Apr. 9, 2013 |
| 8415212 |
Method of enhancing photoresist adhesion to rare earth oxides |
Apr. 9, 2013 |
| 8409975 |
Method for decreasing polysilicon gate resistance in a carbon co-implantation process |
Apr. 2, 2013 |
| 8405131 |
High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same |
Mar. 26, 2013 |
| 8404535 |
Metal gate transistor and method for fabricating the same |
Mar. 26, 2013 |
| 8404534 |
End-to-end gap fill using dielectric film |
Mar. 26, 2013 |
| 8404533 |
Metal gate transistor and method for fabricating the same |
Mar. 26, 2013 |
| 8399345 |
Semiconductor device having nickel silicide layer |
Mar. 19, 2013 |
| 8399318 |
Method of forming an electrical fuse and a metal gate transistor and the related electrical fuse |
Mar. 19, 2013 |
| 8394693 |
Method for manufacturing semiconductor device, and semiconductor device |
Mar. 12, 2013 |
| 8394692 |
Integrating a first contact structure in a gate last process |
Mar. 12, 2013 |
| 8394681 |
Transistor layout for manufacturing process control |
Mar. 12, 2013 |
|
|
|
