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Class Information
Number: 438/198
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.) > Specified crystallographic orientation
Description: Process wherein a given feature of the junction gate field effect device is formed in a definite crystallographic orientation relative to the substrate.


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
7616120 Multiple RF-port modulator for RFID tag Nov. 10, 2009
7611937 High performance transistors with hybrid crystal orientations Nov. 3, 2009
7608522 Method for fabricating a hybrid orientation substrate Oct. 27, 2009
7605447 Highly manufacturable SRAM cells in substrates with hybrid crystal orientation Oct. 20, 2009
7595232 CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors Sep. 29, 2009
7566604 Method of fabricating a dual-gate structure that prevents cut-through and lowered mobility Jul. 28, 2009
7547616 Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometrics Jun. 16, 2009
7544548 Trench liner for DSO integration Jun. 9, 2009
7541629 Embedded insulating band for controlling short-channel effect and leakage reduction for DSB process Jun. 2, 2009
7537985 Double gate isolation May. 26, 2009
7534676 Method of forming enhanced device via transverse stress May. 19, 2009
7531392 Multi-orientation semiconductor-on-insulator (SOI) substrate, and method of fabricating same May. 12, 2009
7524712 Method for manufacturing a semiconductor device and laser irradiation method and laser irradiation apparatus Apr. 28, 2009
7521775 Protection of three dimensional transistor structures during gate stack etch Apr. 21, 2009
7498216 Method of forming high-performance CMOS SOI devices on hybrid crystal-oriented substrates Mar. 3, 2009
7498208 Chevron CMOS trigate structure Mar. 3, 2009
7498191 Semiconductor-on-diamond devices and associated methods Mar. 3, 2009
7494858 Transistor with improved tip profile and method of manufacture thereof Feb. 24, 2009
7488633 Method for forming polysilicon by illuminating a laser beam at the amorphous silicon substrate through a mask Feb. 10, 2009
7485506 Hybrid substrate technology for high-mobility planar and multiple-gate MOSFETS Feb. 3, 2009
7482623 Organic semiconductor film and organic semiconductor device Jan. 27, 2009
7479410 Hybrid-orientation technology buried n-well design Jan. 20, 2009
7470577 Dual work function CMOS devices utilizing carbide based electrodes Dec. 30, 2008
7462525 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain Dec. 9, 2008
7462526 Method for fabricating semiconductor devices using strained silicon bearing material Dec. 9, 2008
7456055 Process for forming an electronic device including semiconductor fins Nov. 25, 2008
7449374 Methods of manufacturing semiconductor devices with rotated substrates Nov. 11, 2008
7445973 Transistor surround gate structure with silicon-on-insulator isolation for memory cells, memory arrays, memory devices and systems and methods of forming same Nov. 4, 2008
7442596 Methods of manufacturing fin type field effect transistors Oct. 28, 2008
7439108 Coplanar silicon-on-insulator (SOI) regions of different crystal orientations and methods of making the same Oct. 21, 2008
7439109 Method of forming an integrated circuit structure on a hybrid crystal oriented substrate Oct. 21, 2008
7432570 Semiconductor device and manufacturing method thereof Oct. 7, 2008
7432149 CMOS on SOI substrates with hybrid crystal orientations Oct. 7, 2008
7425483 Structure and method of fabricating a hybrid substrate for high-performance hybrid-orientation silicon-on-insulator CMOS devices Sep. 16, 2008
7423303 Strained silicon directly-on-insulator substrate with hybrid crystalline orientation and different stress levels Sep. 9, 2008
7416967 Semiconductor device, and method for manufacturing the same Aug. 26, 2008
7393738 Subground rule STI fill for hot structure Jul. 1, 2008
7384836 Integrated circuit transistor insulating region fabrication method Jun. 10, 2008
7378307 Gate of a semiconductor device and method for forming the same May. 27, 2008
7368334 Silicon-on-insulator chip with multiple crystal orientations May. 6, 2008
7364958 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding Apr. 29, 2008
7348658 Multilayer silicon over insulator device Mar. 25, 2008
7338886 Implantation-less approach to fabricating strained semiconductor on isolation wafers Mar. 4, 2008
7335541 Method for fabricating thin film transistor using the mask for forming polysilicon including slit patterns deviated from each other Feb. 26, 2008
7326599 Gate material for semiconductor device fabrication Feb. 5, 2008
7314790 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain Jan. 1, 2008
7312110 Methods of fabricating semiconductor devices having thin film transistors Dec. 25, 2007
7312471 Liquid crystal display device having drive circuit and fabricating method thereof Dec. 25, 2007
7291539 Amorphization/templated recrystallization method for hybrid orientation substrates Nov. 6, 2007
7291527 Work function control of metals Nov. 6, 2007

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