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Class Information
Number: 438/197
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.)
Description: Process for making a field effect transistor wherein the gate electrode is electrically insulated from the semiconductive substrate, that portion of the semiconductive substrate therebeneath being the active channel region separating source and drain.
Sub-classes under this class:
| Class Number |
Class Name |
Patents |
| 438/286 |
Asymmetric |
617 |
| 438/282 |
Buried channel |
166 |
| 438/284 |
Closed or loop gate |
116 |
| 438/199 |
Complementary insulated gate field effect transistors (i.e., cmos) |
1,075 |
| 438/292 |
Direct application of electrical current |
35 |
| 438/289 |
Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) |
573 |
| 438/293 |
Fusion or solidification of semiconductor region |
24 |
| 438/287 |
Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound |
842 |
| 438/257 |
Having additional gate electrode surrounded by dielectric (i.e., floating gate) |
2,181 |
| 438/281 |
Having fuse or integral short |
202 |
| 438/288 |
Having step of storing electrical charge in gate dielectric |
135 |
| 438/280 |
Having underpass or crossunder |
51 |
| 438/234 |
Including bipolar transistor (i.e., bimos) |
356 |
| 438/237 |
Including diode |
260 |
| 438/294 |
Including isolation structure |
351 |
| 438/238 |
Including passive device (e.g., resistor, capacitor, etc.) |
1,247 |
| 438/279 |
Making plural insulated gate field effect transistors having common active region |
426 |
| 438/275 |
Making plural insulated gate field effect transistors of differing electrical characteristics |
1,011 |
| 438/283 |
Plural gate electrodes (e.g., dual gate, etc.) |
419 |
| 438/308 |
Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) |
379 |
| 438/299 |
Self-aligned |
561 |
| 438/198 |
Specified crystallographic orientation |
126 |
| 438/285 |
Utilizing compound semiconductor |
256 |
| 438/268 |
Vertical channel |
713 |
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618868 |
Method of manufacturing field effect transistors using sacrificial blocking layers |
Nov. 17, 2009 |
| 7618854 |
High frequency MOS transistor, method of forming the same, and method of manufacturing a semiconductor device including the same |
Nov. 17, 2009 |
| 7618853 |
Field effect transistors with dielectric source drain halo regions and reduced miller capacitance |
Nov. 17, 2009 |
| 7618841 |
Hydrazine-free solution deposition of chalcogenide films |
Nov. 17, 2009 |
| 7616120 |
Multiple RF-port modulator for RFID tag |
Nov. 10, 2009 |
| 7615446 |
Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof |
Nov. 10, 2009 |
| 7615442 |
Method for fabricating trench metal-oxide-semiconductor field effect transistor |
Nov. 10, 2009 |
| 7615432 |
HDP/PECVD methods of fabricating stress nitride structures for field effect transistors |
Nov. 10, 2009 |
| 7615429 |
Methods of fabricating field effect transistors having multiple stacked channels |
Nov. 10, 2009 |
| 7615428 |
Vertical memory device and method |
Nov. 10, 2009 |
| 7615427 |
Spacer-less low-k dielectric processes |
Nov. 10, 2009 |
| 7615426 |
PMOS transistor with discontinuous CESL and method of fabrication |
Nov. 10, 2009 |
| 7615402 |
Electrostatically operated tunneling transistor |
Nov. 10, 2009 |
| 7612431 |
Trench polysilicon diode |
Nov. 3, 2009 |
| 7611936 |
Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method |
Nov. 3, 2009 |
| 7611935 |
Gate straining in a semiconductor device |
Nov. 3, 2009 |
| 7611934 |
Semiconductor device and method of fabricating the same |
Nov. 3, 2009 |
| 7608498 |
Method of manufacturing semiconductor device |
Oct. 27, 2009 |
| 7608476 |
Electronic device |
Oct. 27, 2009 |
| 7605092 |
Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same |
Oct. 20, 2009 |
| 7605032 |
Method for producing a trench transistor and trench transistor |
Oct. 20, 2009 |
| 7601639 |
Method for conditioning a microelectronics device deposition chamber |
Oct. 13, 2009 |
| 7601601 |
Method for manufacturing semiconductor device |
Oct. 13, 2009 |
| 7601583 |
Transistor structure of memory device and method for fabricating the same |
Oct. 13, 2009 |
| 7601579 |
Method of manufacturing semiconductor integrated circuit |
Oct. 13, 2009 |
| 7601578 |
Defect control in gate dielectrics |
Oct. 13, 2009 |
| 7601577 |
Work function control of metals |
Oct. 13, 2009 |
| 7601576 |
Method for fabricating semiconductor device |
Oct. 13, 2009 |
| 7601575 |
Integration of pre-S/D anneal selective nitride/oxide composite cap for improving transistor performance |
Oct. 13, 2009 |
| 7601571 |
Methods of manufacturing interferometric modulators with thin film transistors |
Oct. 13, 2009 |
| 7601568 |
MOS transistor and method for producing a MOS transistor structure |
Oct. 13, 2009 |
| 7598566 |
Trench gate field effect devices |
Oct. 6, 2009 |
| 7598544 |
Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same |
Oct. 6, 2009 |
| 7598133 |
Semiconductor memory device and a method of manufacturing the same |
Oct. 6, 2009 |
| 7595231 |
Semiconductor device and its manufacture |
Sep. 29, 2009 |
| 7595230 |
Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconduc |
Sep. 29, 2009 |
| 7592682 |
Optical waveguide and photoreceptor |
Sep. 22, 2009 |
| 7592270 |
Modulation of stress in stress film through ion implantation and its application in stress memorization technique |
Sep. 22, 2009 |
| 7592222 |
Method of fabricating flash memory device |
Sep. 22, 2009 |
| 7592213 |
Tensile strained NMOS transistor using group III-N source/drain regions |
Sep. 22, 2009 |
| 7588977 |
Method of fabricating a MOS field effect transistor having plurality of channels |
Sep. 15, 2009 |
| 7585773 |
Non-conformal stress liner for enhanced MOSFET performance |
Sep. 8, 2009 |
| 7585756 |
Semiconductor device and method of manufacturing the same |
Sep. 8, 2009 |
| 7585719 |
Integrated circuit with multi-length output transistor segments |
Sep. 8, 2009 |
| 7585718 |
Method of manufacturing a carbon nano-tube transistor |
Sep. 8, 2009 |
| 7585717 |
Method of manufacturing semiconductor device, semiconductor device and electronic apparatus therefore |
Sep. 8, 2009 |
| 7585710 |
Methods of forming electronic devices having partially elevated source/drain structures |
Sep. 8, 2009 |
| 7585706 |
Method of fabricating a semiconductor device |
Sep. 8, 2009 |
| 7585705 |
Method for preventing gate oxide damage of a trench MOSFET during wafer processing while adding an ESD protection module atop |
Sep. 8, 2009 |
| 7582936 |
Electro-static discharge protection circuit and method for fabricating the same |
Sep. 1, 2009 |
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