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Class Information
Number: 438/197
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having insulated gate (e.g., igfet, misfet, mosfet, etc.)
Description: Process for making a field effect transistor wherein the gate electrode is electrically insulated from the semiconductive substrate, that portion of the semiconductive substrate therebeneath being the active channel region separating source and drain.










Sub-classes under this class:

Class Number Class Name Patents
438/286 Asymmetric 835
438/282 Buried channel 232
438/284 Closed or loop gate 194
438/199 Complementary insulated gate field effect transistors (i.e., cmos) 1,896
438/292 Direct application of electrical current 54
438/289 Doping of semiconductive channel region beneath gate insulator (e.g., adjusting threshold voltage, etc.) 754
438/293 Fusion or solidification of semiconductor region 35
438/287 Gate insulator structure constructed of diverse dielectrics (e.g., mnos, etc.) or of nonsilicon compound 1,239
438/257 Having additional gate electrode surrounded by dielectric (i.e., floating gate) 2,990
438/281 Having fuse or integral short 259
438/288 Having step of storing electrical charge in gate dielectric 264
438/280 Having underpass or crossunder 69
438/234 Including bipolar transistor (i.e., bimos) 401
438/237 Including diode 401
438/294 Including isolation structure 507
438/238 Including passive device (e.g., resistor, capacitor, etc.) 1,580
438/279 Making plural insulated gate field effect transistors having common active region 530
438/275 Making plural insulated gate field effect transistors of differing electrical characteristics 1,382
438/283 Plural gate electrodes (e.g., dual gate, etc.) 733
438/308 Radiation or energy treatment modifying properties of semiconductor regions of substrate (e.g., thermal, corpuscular, electromagnetic, etc.) 490
438/299 Self-aligned 747
438/198 Specified crystallographic orientation 232
438/285 Utilizing compound semiconductor 505
438/268 Vertical channel 1,156


Patents under this class:

Patent Number Title Of Patent Date Issued
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8709887 Method for fabricating a nitrided silicon-oxide gate dielectric Apr. 29, 2014
8709881 Direct chemical vapor deposition of graphene on dielectric surfaces Apr. 29, 2014
8703556 Method of making a FinFET device Apr. 22, 2014
8691646 FINFET compatible PC-bounded ESD diode Apr. 8, 2014
8691641 Method for manufacturing semiconductor device Apr. 8, 2014
8691636 Method for removing germanium suboxide Apr. 8, 2014
8686437 DIMOSFET SiC semiconductor device Apr. 1, 2014
8685817 Metal gate structures for CMOS transistor devices having reduced parasitic capacitance Apr. 1, 2014
8685810 Power layout for integrated circuits Apr. 1, 2014
8685809 Semiconductor structures having improved contact resistance Apr. 1, 2014
8685788 Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof Apr. 1, 2014
8680619 Method of fabricating hybrid impact-ionization semiconductor device Mar. 25, 2014
8680614 Split trench-gate MOSFET with integrated Schottky diode Mar. 25, 2014
8680510 Method of forming compound semiconductor Mar. 25, 2014
8679926 Local charge and work function engineering on MOSFET Mar. 25, 2014
8679925 Methods of manufacturing semiconductor devices and transistors Mar. 25, 2014
8674433 Semiconductor process Mar. 18, 2014
8674359 TFT, array substrate for display apparatus including TFT, and methods of manufacturing TFT and array substrate Mar. 18, 2014
8673724 Methods of fabricating semiconductor devices Mar. 18, 2014
8673720 Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile Mar. 18, 2014
8673709 FinFETs with multiple fin heights Mar. 18, 2014
8673704 FinFET and method for manufacturing the same Mar. 18, 2014
8673697 Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same Mar. 18, 2014
8673683 Graphene field effect transistor Mar. 18, 2014
8673401 Gallium ink and methods of making and using same Mar. 18, 2014
8669617 Multi-gate transistors Mar. 11, 2014
8669162 Semiconductor device and method of manufacturing the same Mar. 11, 2014
8669153 Integrating a first contact structure in a gate last process Mar. 11, 2014
8669152 Methods of manufacturing semiconductor devices Mar. 11, 2014
8669151 High-K metal gate electrode structures formed at different process stages of a semiconductor device Mar. 11, 2014
8669147 Methods of forming high mobility fin channels on three dimensional semiconductor devices Mar. 11, 2014
8669145 Method and structure for strained FinFET devices Mar. 11, 2014
8664064 Fin field effect transistor and method for forming the same Mar. 4, 2014
8664057 High-K metal gate electrode structures formed by early cap layer adaptation Mar. 4, 2014
8664055 Fin field-effect transistor structure and manufacturing process thereof Mar. 4, 2014
8664054 Method for forming semiconductor structure Mar. 4, 2014
8664053 Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same Mar. 4, 2014
8659093 Continuous metal semiconductor alloy via for interconnects Feb. 25, 2014
8659080 Semiconductor structure and manufacturing process thereof Feb. 25, 2014
8658488 Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip Feb. 25, 2014
8658486 Forming facet-less epitaxy with a cut mask Feb. 25, 2014
8658485 Semiconductor device and method of fabricating the same Feb. 25, 2014
8658484 Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same Feb. 25, 2014
8653565 Mixed mode multiple switch integration of multiple compound semiconductor FET devices Feb. 18, 2014
8653517 Thin-film transistor and method for manufacturing the same Feb. 18, 2014
8652927 Integration of non-noble DRAM electrode Feb. 18, 2014
8652893 Semiconductor device and manufacturing method thereof Feb. 18, 2014
8652892 Implant damage control by in-situ C doping during sige epitaxy for device applications Feb. 18, 2014
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014











 
 
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