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Class Information
Number: 438/196
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having junction gate (e.g., jfet, sit, etc.) > Including isolation structure
Description: Process for making a junction gate field effect transistor having a structure which serves to at least partially electrically isolate the semiconductor region in which the device is formed from laterally adjacent semiconductive regions.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8692266 Circuit substrate structure Apr. 8, 2014
8685830 Method of filling shallow trenches Apr. 1, 2014
8679884 Methods for manufacturing semiconductor apparatus and CMOS image sensor Mar. 25, 2014
8679938 Shallow trench isolation for device including deep trench capacitors Mar. 25, 2014
8664053 Semiconductor device with isolation structures and gate insulating film that contain an element for threshold reduction and method of manufacturing the same Mar. 4, 2014
8647941 Method of forming semiconductor device Feb. 11, 2014
8623722 Methods of making JFET devices with pin gate stacks Jan. 7, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8610240 Integrated circuit with multi recessed shallow trench isolation Dec. 17, 2013
8536625 Electronic shutter with photogenerated charge extinguishment capability for back-illuminated image sensors Sep. 17, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8501550 Method of fabricating gate and method of manufacturing semiconductor device using the same Aug. 6, 2013
8404537 Method of manufacturing semiconductor device Mar. 26, 2013
8395221 Depletion-free MOS using atomic-layer doping Mar. 12, 2013
8368161 Solid-state image capturing device, method of manufacturing solid-state image capturing device, and image capturing apparatus Feb. 5, 2013
8309993 Pixel of image sensor and method for fabricating the same Nov. 13, 2012
8241970 CMOS with channel P-FinFET and channel N-FinFET having different crystalline orientations and parallel fins Aug. 14, 2012
8232152 Removing method of a hard mask Jul. 31, 2012
8187930 Structure and layout of a FET prime cell May. 29, 2012
8124513 Germanium field effect transistors and fabrication thereof Feb. 28, 2012
8119472 Silicon device on Si:C SOI and SiGe and method of manufacture Feb. 21, 2012
8097503 Method of manufacturing semiconductor device Jan. 17, 2012
8089128 Transistor gate forming methods and integrated circuits Jan. 3, 2012
8071482 Manufacturing method of a silicon carbide semiconductor device Dec. 6, 2011
8053286 Method of forming semiconductor device including trench gate structure Nov. 8, 2011
8034684 Semiconductor device with improved overlay margin and method of manufacturing the same Oct. 11, 2011
7951659 Method for simultaneously tensile and compressive straining the channels of NMOS and PMOS transistors respectively May. 31, 2011
7947551 Method of forming a shallow trench isolation structure May. 24, 2011
7939394 Multiple-depth STI trenches in integrated circuit fabrication May. 10, 2011
7939395 High-voltage SOI MOS device structure and method of fabrication May. 10, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7910482 Method of forming a finFET and structure Mar. 22, 2011
7910453 Storage nitride encapsulation for non-planar sonos NAND flash charge retention Mar. 22, 2011
7858454 Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same Dec. 28, 2010
7858467 Method of manufacturing semiconductor device Dec. 28, 2010
7855109 Method for manufacturing a semiconductor device capable of preventing the generation of a bridge between a recess gate and a PLC plug Dec. 21, 2010
7855407 CMOS image sensor and method for manufacturing the same Dec. 21, 2010
7790535 Depletion-free MOS using atomic-layer doping Sep. 7, 2010
7781267 Enclosed nanotube structure and method for forming Aug. 24, 2010
7763523 Method for forming device isolation structure of semiconductor device using annealing steps to anneal flowable insulation layer Jul. 27, 2010
7755140 Process charging and electrostatic damage protection in silicon-on-insulator technology Jul. 13, 2010
7745274 Gate self aligned low noise JFET Jun. 29, 2010
7732279 Semiconductor device with improved overlay margin and method of manufacturing the same Jun. 8, 2010
7713804 Method of forming an oxide isolated metal silicon-gate JFET May. 11, 2010
7670888 Low noise JFET Mar. 2, 2010
7670890 Silicide block isolated junction field effect transistor source, drain and gate Mar. 2, 2010
7659180 Method of reducing step height difference between doped regions of field oxide in an integrated circuit Feb. 9, 2010
7629223 Method for manufacturing semiconductor device Dec. 8, 2009
7514313 Process of forming an electronic device including a seed layer and a semiconductor layer selectively formed over the seed layer Apr. 7, 2009
7459357 Versatile system for cross-lateral junction field effect transistor Dec. 2, 2008

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