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Class Information
Number: 438/194
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having junction gate (e.g., jfet, sit, etc.) > Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
Description: Process for making a junction gate field effect transistor having a step of introducing an electrically active dopant species into the semiconductor channel region beneath the gate electrode.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8685810 Power layout for integrated circuits Apr. 1, 2014
8680511 Bilayer gate dielectric with low equivalent oxide thickness for graphene devices Mar. 25, 2014
8642135 Systems and methods for plasma doping microfeature workpieces Feb. 4, 2014
8642996 Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates Feb. 4, 2014
8633083 Apparatus and method for a metal oxide semiconductor field effect transistor with source side punch-through protection implant Jan. 21, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8541296 Method of manufacturing dummy gates in gate last process Sep. 24, 2013
8530286 Low power semiconductor transistor structure and method of fabrication thereof Sep. 10, 2013
8445384 High density six transistor FinFET SRAM cell layout May. 21, 2013
8435845 Junction field effect transistor with an epitaxially grown gate structure May. 7, 2013
8298884 Method to reduce threshold voltage variability with through gate well implant Oct. 30, 2012
8298886 Electronic device including doped regions between channel and drain regions and a process of forming the same Oct. 30, 2012
8293599 Methods of forming semiconductor devices having gates with different work functions using selective injection of diffusion inhibiting materials Oct. 23, 2012
8264016 Semiconductor device including a channel stop zone Sep. 11, 2012
8232151 Structure and method for manufacturing asymmetric devices Jul. 31, 2012
8227317 Semiconductor device manufacturing method and semiconductor device Jul. 24, 2012
8193046 Junction field effect transistor Jun. 5, 2012
8188542 Field effect transistors including variable width channels and methods of forming the same May. 29, 2012
8173527 Stepped masking for patterned implantation May. 8, 2012
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making May. 1, 2012
8053782 Single and few-layer graphene based photodetecting devices Nov. 8, 2011
7968391 High voltage GaN-based transistor structure Jun. 28, 2011
7939393 Method of adjusting FDSOI threshold voltage through oxide charges generation in the buried oxide May. 10, 2011
7927987 Method of reducing channeling of ion implants using a sacrificial scattering layer Apr. 19, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7892865 Method of manufacturing a single chip semiconductor integrated circuit device including a mask ROM in a short time Feb. 22, 2011
7883949 Methods of forming silicon carbide switching devices including P-type channels Feb. 8, 2011
7879669 Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel length Feb. 1, 2011
7825441 Junction field effect transistor with a hyperabrupt junction Nov. 2, 2010
7824973 Method of forming a semiconductor device and semiconductor device thereof Nov. 2, 2010
RE41764 Semiconductor device with compensated threshold voltage and method for making same Sep. 28, 2010
7795083 Semiconductor structure and fabrication method thereof Sep. 14, 2010
7759700 Semiconductor device Jul. 20, 2010
7718498 Semiconductor device and method of producing same May. 18, 2010
7713804 Method of forming an oxide isolated metal silicon-gate JFET May. 11, 2010
7709311 JFET device with improved off-state leakage current and method of fabrication May. 4, 2010
7692220 Semiconductor device storage cell structure, method of operation, and method of manufacture Apr. 6, 2010
7691693 Method for suppressing layout sensitivity of threshold voltage in a transistor array Apr. 6, 2010
7687834 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 30, 2010
7670875 Method of manufacturing a single chip semiconductor integrated circuit device including a mask ROM in a short time Mar. 2, 2010
7670888 Low noise JFET Mar. 2, 2010
7622356 Method of fabricating metal oxide semiconductor field effect transistor Nov. 24, 2009
7615802 Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure Nov. 10, 2009
7569873 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Aug. 4, 2009
7566600 SOI device with reduced drain induced barrier lowering Jul. 28, 2009
7528026 Method for reducing silicide defects by removing contaminants prior to drain/source activation May. 5, 2009
7501317 Method of manufacturing semiconductor device Mar. 10, 2009
7470972 Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress Dec. 30, 2008
7411231 JFET with drain and/or source modification implant Aug. 12, 2008
7341901 Semiconductor processing methods of forming integrated circuitry Mar. 11, 2008

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