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Class Information
Number: 438/191
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having junction gate (e.g., jfet, sit, etc.) > Having heterojunction
Description: Process for making a junction gate field effect transistor which possesses an interface between two dissimilar semiconductor materials which constitute a junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7622322 |
Method of forming an AlN coated heterojunction field effect transistor |
Nov. 24, 2009 |
| 7608496 |
High speed GE channel heterostructures for field effect devices |
Oct. 27, 2009 |
| 7605031 |
Semiconductor device having strain-inducing substrate and fabrication methods thereof |
Oct. 20, 2009 |
| 7605017 |
Method of manufacturing a semiconductor device and products made thereby |
Oct. 20, 2009 |
| 7560325 |
Methods of making lateral junction field effect transistors using selective epitaxial growth |
Jul. 14, 2009 |
| 7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
Jun. 30, 2009 |
| 7541232 |
Method for fabrication of devices in a multi-layer structure |
Jun. 2, 2009 |
| 7504286 |
Semiconductor memory devices and methods for fabricating the same |
Mar. 17, 2009 |
| 7494855 |
Compound semiconductor device and method for fabricating the same |
Feb. 24, 2009 |
| 7459718 |
Field effect transistor |
Dec. 2, 2008 |
| 7429504 |
Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methods |
Sep. 30, 2008 |
| 7416909 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Aug. 26, 2008 |
| 7348228 |
Deep buried channel junction field effect transistor (DBCJFET) |
Mar. 25, 2008 |
| 7338826 |
Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs |
Mar. 4, 2008 |
| 7321132 |
Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
Jan. 22, 2008 |
| 7297589 |
Transistor device and method |
Nov. 20, 2007 |
| 7265006 |
Method of fabricating heterojunction devices integrated with CMOS |
Sep. 4, 2007 |
| 7141465 |
Method of manufacturing a semiconductor device having a channel layer, a first semiconductor layer and a second semiconductor layer with a conductive impurity region |
Nov. 28, 2006 |
| 7045404 |
Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
May. 16, 2006 |
| 7015518 |
HEMT device with a mesa isolating multilayer film |
Mar. 21, 2006 |
| 7012287 |
HEMT device with a mesa isolating multilayer film |
Mar. 14, 2006 |
| 7011997 |
Method of fabricating a HEMT device |
Mar. 14, 2006 |
| 6946317 |
Method of fabricating heteroepitaxial microstructures |
Sep. 20, 2005 |
| 6881976 |
Heterojunction BiCMOS semiconductor |
Apr. 19, 2005 |
| 6872625 |
Field-effect transistor based on embedded cluster structures and process for its production |
Mar. 29, 2005 |
| 6852602 |
Semiconductor crystal film and method for preparation thereof |
Feb. 8, 2005 |
| 6730551 |
Formation of planar strained layers |
May. 4, 2004 |
| 6673667 |
Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
Jan. 6, 2004 |
| 6624032 |
Structure and process flow for fabrication of dual gate floating body integrated MOS transistors |
Sep. 23, 2003 |
| 6555850 |
Field-effect transistor |
Apr. 29, 2003 |
| 6544867 |
Molecular beam epitaxy (MBE) growth of semi-insulating C-doped GaN |
Apr. 8, 2003 |
| 6531351 |
Method for forming a CMOS circuit of GaAS/Ge on Si substrate |
Mar. 11, 2003 |
| 6528370 |
Semiconductor device and method of manufacturing the same |
Mar. 4, 2003 |
| 6479843 |
Single supply HFET with temperature compensation |
Nov. 12, 2002 |
| 6448119 |
Field effect transistor and method of fabricating the same |
Sep. 10, 2002 |
| 6326650 |
Method of forming a semiconductor structure |
Dec. 4, 2001 |
| 6255150 |
Use of crystalline SiOx barriers for Si-based resonant tunneling diodes |
Jul. 3, 2001 |
| 6242336 |
Semiconductor device having multilevel interconnection structure and method for fabricating the same |
Jun. 5, 2001 |
| 6198116 |
Complementary heterostructure integrated single metal transistor fabrication method |
Mar. 6, 2001 |
| 6096587 |
Manufacturing method of a junction field effect transistor |
Aug. 1, 2000 |
| 5933761 |
Dual damascene structure and its manufacturing method |
Aug. 3, 1999 |
| 5923075 |
Definition of anti-fuse cell for programmable gate array application |
Jul. 13, 1999 |
| 5858818 |
Formation of InGaSa p-n Junction by control of growth temperature |
Jan. 12, 1999 |
| 5786244 |
Method for making GaAs-InGaAs high electron mobility transistor |
Jul. 28, 1998 |
| 5714777 |
Si/SiGe vertical junction field effect transistor |
Feb. 3, 1998 |
| 5610085 |
Method of making a vertical FET using epitaxial overgrowth |
Mar. 11, 1997 |
| 5485017 |
Semiconductor device and method of manufacturing same |
Jan. 16, 1996 |
| 5420059 |
Method of making a high performance MESFET with multiple quantum wells |
May. 30, 1995 |
| 5264713 |
Junction field-effect transistor formed in silicon carbide |
Nov. 23, 1993 |
| 5248626 |
Method for fabricating self-aligned gate diffused junction field effect transistor |
Sep. 28, 1993 |
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