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Class Information
Number: 438/186
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having junction gate (e.g., jfet, sit, etc.)
Description: Process for making a field effect transistor which possesses a gate electrode which forms a PN (rectifying) junction with the semiconductor active channel region.










Sub-classes under this class:

Class Number Class Name Patents
438/189 And bipolar transistor 83
438/190 And passive device (e.g., resistor, capacitor, etc.) 91
438/188 Complementary junction gate field effect transistors 83
438/194 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) 117
438/191 Having heterojunction 93
438/196 Including isolation structure 125
438/195 Plural gate electrodes 170
438/187 Specified crystallographic orientation 55
438/192 Vertical channel 141


Patents under this class:
1 2 3 4

Patent Number Title Of Patent Date Issued
8669149 Semiconductor structure and fabrication method thereof Mar. 11, 2014
8653535 Silicon carbide semiconductor device having a contact region that includes a first region and a second region, and process for production thereof Feb. 18, 2014
RE44730 Method of manufacturing a MOSFET structure Jan. 28, 2014
RE44720 Method of manufacturing a MOSFET structure Jan. 21, 2014
8618583 Junction gate field effect transistor structure having n-channel Dec. 31, 2013
8603870 Semiconductor device and method of manufacturing the same Dec. 10, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8575648 Silicon carbide semiconductor device and method of manufacturing the same Nov. 5, 2013
8569171 Mask-based silicidation for FEOL defectivity reduction and yield boost Oct. 29, 2013
8524552 Normally-off power JFET and manufacturing method thereof Sep. 3, 2013
8519452 Semiconductor device with junction field-effect transistor and manufacturing method of the same Aug. 27, 2013
8492803 Field effect device with reduced thickness gate Jul. 23, 2013
8492215 Static random access memory (SRAM) cell and method for forming same Jul. 23, 2013
8481372 JFET device structures and methods for fabricating the same Jul. 9, 2013
8435845 Junction field effect transistor with an epitaxially grown gate structure May. 7, 2013
8421127 Semiconductor device and method for fabricating the same Apr. 16, 2013
8399361 Semiconductor device and method of manufacturing the same Mar. 19, 2013
8373207 Semiconductor device Feb. 12, 2013
8334178 High breakdown voltage double-gate semiconductor device Dec. 18, 2012
8288798 Step doping in extensions of III-V family semiconductor devices Oct. 16, 2012
8274150 Chip bump structure and method for forming the same Sep. 25, 2012
8264058 MOS-driver compatible JFET structure with enhanced gate source characteristics Sep. 11, 2012
8193046 Junction field effect transistor Jun. 5, 2012
8169022 Vertical junction field effect transistors and diodes having graded doped regions and methods of making May. 1, 2012
8163653 Semiconductor device and method of manufacturing the same Apr. 24, 2012
8129232 Semiconductor device and method of manufacturing the same Mar. 6, 2012
8120072 JFET devices with increased barrier height and methods of making same Feb. 21, 2012
8097905 Cascoded high voltage junction field effect transistor Jan. 17, 2012
8053298 Planar split-gate high-performance MOSFET structure and manufacturing method Nov. 8, 2011
8048731 Method for reducing low frequency noise of transistor Nov. 1, 2011
8036031 Semiconductor device having a field effect source/drain region Oct. 11, 2011
7989284 DRAM cell transistor device and method Aug. 2, 2011
7977178 Asymmetric source/drain junctions for low power silicon on insulator devices Jul. 12, 2011
7968393 Semiconductor device, design method and structure Jun. 28, 2011
7944017 Semiconductor device and manufacturing method of the same May. 17, 2011
7939863 Area efficient 3D integration of low noise JFET and MOS in linear bipolar CMOS process May. 10, 2011
7935601 Method for providing semiconductors having self-aligned ion implant May. 3, 2011
7915107 Integrated circuit using complementary junction field effect transistor and MOS transistor in silicon and silicon alloys Mar. 29, 2011
7910417 Distributed high voltage JFET Mar. 22, 2011
7892904 Amorphous silicon MONOS or MAS memory cell structure with OTP function Feb. 22, 2011
7867862 Semiconductor structure including high voltage device Jan. 11, 2011
7842549 Methods of fabricating silicon carbide devices incorporating multiple floating guard ring edge terminations Nov. 30, 2010
7838900 Single-chip common-drain JFET device and its applications Nov. 23, 2010
7838902 Single-chip common-drain JFET device and its applications Nov. 23, 2010
7795083 Semiconductor structure and fabrication method thereof Sep. 14, 2010
7785973 Electronic device including a gate electrode having portions with different conductivity types and a process of forming the same Aug. 31, 2010
7781809 High voltage depletion layer field effect transistor Aug. 24, 2010
7768033 Single-chip common-drain JFET device and its applications Aug. 3, 2010
7763523 Method for forming device isolation structure of semiconductor device using annealing steps to anneal flowable insulation layer Jul. 27, 2010
7759695 Single-chip common-drain JFET device and its applications Jul. 20, 2010

1 2 3 4










 
 
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