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Class Information
Number: 438/183
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.) > Self-aligned > Doping of semiconductive region > Dummy gate
Description: Process wherein a temporary gate is formed or utilized at any stage in the process and is intended to be removed or have no function in the final device.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8685807 Method of forming metal gates and metal contacts in a common fill process Apr. 1, 2014
8679908 Use of silicide block process to camouflage a false transistor Mar. 25, 2014
8679909 Recessing and capping of gate structures with varying metal compositions Mar. 25, 2014
8673707 Method for forming metal gate Mar. 18, 2014
8673708 Replacement gate ETSOI with sharp junction Mar. 18, 2014
8669618 Manufacturing method for semiconductor device having metal gate Mar. 11, 2014
8664119 Semiconductor device manufacturing method Mar. 4, 2014
8658483 Method of fabricating an integrated circuit device having backside bevel protection Feb. 25, 2014
8652890 Methods for fabricating integrated circuits with narrow, metal filled openings Feb. 18, 2014
8652891 Semiconductor device and method of manufacturing the same Feb. 18, 2014
8652898 Integrated circuit with a thin body field effect transistor and capacitor Feb. 18, 2014
8647936 Junction field effect transistor with an epitaxially grown gate structure Feb. 11, 2014
8647937 Deep depleted channel MOSFET with minimized dopant fluctuation and diffusion levels Feb. 11, 2014
8637358 Field-effect-transistor with self-aligned diffusion contact Jan. 28, 2014
8623721 Silicide formation and associated devices Jan. 7, 2014
8614131 Self-aligned static random access memory (SRAM) on metal gate Dec. 24, 2013
8592264 Source-drain extension formation in replacement metal gate transistor device Nov. 26, 2013
8592265 Method for manufacturing semiconductor device having a metal gate electrode Nov. 26, 2013
8592920 Semiconductor device and manufacturing method of the same Nov. 26, 2013
8586436 Method of forming a variety of replacement gate types including replacement gate types on a hybrid semiconductor device Nov. 19, 2013
8580625 Metal oxide semiconductor transistor and method of manufacturing the same Nov. 12, 2013
8574926 Magnetic memory and manufacturing method thereof Nov. 5, 2013
8569140 Method of fabricating semiconductor device Oct. 29, 2013
8564072 Semiconductor device having a blocking structure and method of manufacturing the same Oct. 22, 2013
8551847 Method for forming metal gate Oct. 8, 2013
8546208 Isolation region fabrication for replacement gate processing Oct. 1, 2013
8546209 Replacement metal gate processing with reduced interlevel dielectric layer etch rate Oct. 1, 2013
8546252 Metal gate FET having reduced threshold voltage roll-off Oct. 1, 2013
8535998 Method for fabricating a gate structure Sep. 17, 2013
8530292 Method for manufacturing a strained channel MOS transistor Sep. 10, 2013
8525270 Structures and methods to stop contact metal from extruding into replacement gates Sep. 3, 2013
8519454 Structure and process for metal fill in replacement metal gate integration Aug. 27, 2013
8507338 Semiconductor structure and fabricating method thereof Aug. 13, 2013
8501550 Method of fabricating gate and method of manufacturing semiconductor device using the same Aug. 6, 2013
8492214 Damascene metal gate and shield structure, methods of manufacture and design structures Jul. 23, 2013
8487371 Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same Jul. 16, 2013
8481379 Method for manufacturing fin field-effect transistor Jul. 9, 2013
8481415 Self-aligned contact combined with a replacement metal gate/high-K gate dielectric Jul. 9, 2013
8476126 Gate stack for high-K/metal gate last process Jul. 2, 2013
8470653 Method for manufacturing a P-type MOS transistor, method for manufacturing a CMOS-type semiconductor apparatus having the P-type MOS transistor, and CMOS-type semiconductor apparatus manufactu Jun. 25, 2013
8470661 High-K gate electrode structure formed after transistor fabrication by using a spacer Jun. 25, 2013
8460987 Method for obtaining a layer of AlN having substantially vertical sides Jun. 11, 2013
8461049 Method for fabricating semiconductor device Jun. 11, 2013
8445342 Short channel semiconductor devices with reduced halo diffusion May. 21, 2013
8445341 Semiconductor device and fabrication method for the same May. 21, 2013
8431453 Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structure Apr. 30, 2013
8420469 Schottky FET fabricated with gate last process Apr. 16, 2013
8420470 Method of fabricating a semiconductor device using compressive material with a replacement gate technique Apr. 16, 2013
8420486 Method for manufacturing semiconductor device Apr. 16, 2013

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