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Class Information
Number: 438/181
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.) > Self-aligned > Doping of semiconductive region
Description: Process wherein a semiconductive region of the substrate is changed in electrical properties by introduction of an electrically active impurity.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7608192 |
Image sensor and method for fabricating the same |
Oct. 27, 2009 |
| 7605017 |
Method of manufacturing a semiconductor device and products made thereby |
Oct. 20, 2009 |
| 7592212 |
Methods for determining a dose of an impurity implanted in a semiconductor substrate |
Sep. 22, 2009 |
| 7585714 |
Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus |
Sep. 8, 2009 |
| 7550358 |
MEMS device including a laterally movable portion with piezo-resistive sensing elements and electrostatic actuating elements on trench side walls, and methods for producing the same |
Jun. 23, 2009 |
| 7537971 |
Method for fabricating CMOS image sensor |
May. 26, 2009 |
| 7528410 |
Semiconductor device and method for manufacturing the same |
May. 5, 2009 |
| 7501317 |
Method of manufacturing semiconductor device |
Mar. 10, 2009 |
| 7432144 |
Method for forming a transistor for reducing a channel length |
Oct. 7, 2008 |
| 7348227 |
Semiconductor device and manufacturing method thereof |
Mar. 25, 2008 |
| 7244642 |
Method to obtain fully silicided gate electrodes |
Jul. 17, 2007 |
| 7238577 |
Method of manufacturing self-aligned n and p type stripes for a superjunction device |
Jul. 3, 2007 |
| 7226824 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Jun. 5, 2007 |
| 7198967 |
Active matrix type semiconductor display device |
Apr. 3, 2007 |
| 7160762 |
Method for manufacturing semiconductor device, semiconductor device, and laser irradiation apparatus |
Jan. 9, 2007 |
| 7157321 |
Semiconductor device and method for manufacturing the same |
Jan. 2, 2007 |
| 7122408 |
Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation |
Oct. 17, 2006 |
| 7063991 |
Methods of determining characteristics of doped regions on device wafers, and system for accomplishing same |
Jun. 20, 2006 |
| 6960498 |
Doping method, doping apparatus, and control system for doping apparatus |
Nov. 1, 2005 |
| 6881616 |
System for forming a semiconductor device and method thereof including implanting through a L shaped spacer to form source and drain regions |
Apr. 19, 2005 |
| 6872604 |
Method of fabricating a light emitting device |
Mar. 29, 2005 |
| 6861320 |
Method of making starting material for chip fabrication comprising a buried silicon nitride layer |
Mar. 1, 2005 |
| 6773972 |
Memory cell with transistors having relatively high threshold voltages in response to selective gate doping |
Aug. 10, 2004 |
| 6638801 |
Semiconductor device and its manufacturing method |
Oct. 28, 2003 |
| 6613621 |
Methods of forming self-aligned contact pads using a damascene gate process |
Sep. 2, 2003 |
| 6593194 |
Metal-insulator-semiconductor field effect transistor having an oxidized aluminum nitride gate insulator formed on a gallium nitride or silicon substrate, and method of making the same |
Jul. 15, 2003 |
| 6562671 |
Semiconductor display device and manufacturing method thereof |
May. 13, 2003 |
| 6558995 |
Holographic, laser-induced fabrication of indium nitride quantum wires and quantum dots |
May. 6, 2003 |
| 6555844 |
Semiconductor device with minimal short-channel effects and low bit-line resistance |
Apr. 29, 2003 |
| 6541319 |
Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes |
Apr. 1, 2003 |
| 6458640 |
GaAs MESFET having LDD and non-uniform P-well doping profiles |
Oct. 1, 2002 |
| 6403410 |
Plasma doping system and plasma doping method |
Jun. 11, 2002 |
| 6395573 |
Laser diode and method for fabricating the same |
May. 28, 2002 |
| 6387738 |
Method for manufacturing a thin film transistor |
May. 14, 2002 |
| 6323073 |
Method for forming doped regions on an SOI device |
Nov. 27, 2001 |
| 6309933 |
Method of fabricating T-shaped recessed polysilicon gate transistors |
Oct. 30, 2001 |
| 6284630 |
Method for fabrication of abrupt drain and source extensions for a field effect transistor |
Sep. 4, 2001 |
| 6184112 |
Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile |
Feb. 6, 2001 |
| 6100951 |
Thin-film switching elements for electronic devices and a method of manufacturing the same |
Aug. 8, 2000 |
| 6083782 |
High performance GaAs field effect transistor structure |
Jul. 4, 2000 |
| 5972743 |
Precursor compositions for ion implantation of antimony and ion implantation process utilizing same |
Oct. 26, 1999 |
| 5885859 |
Methods of fabricating multi-gate, offset source and drain field effect transistors |
Mar. 23, 1999 |
| 5824575 |
Semiconductor device and method of manufacturing the same |
Oct. 20, 1998 |
| 5734177 |
Semiconductor device, active-matrix substrate and method for fabricating the same |
Mar. 31, 1998 |
| 5693544 |
N-type higfet and method |
Dec. 2, 1997 |
| 5688703 |
Method of manufacturing a gate structure for a metal semiconductor field effect transistor |
Nov. 18, 1997 |
| 5536666 |
Method for fabricating a planar ion-implanted GaAs MESFET with improved open-channel burnout characteristics |
Jul. 16, 1996 |
| 5514606 |
Method of fabricating high breakdown voltage FETs |
May. 7, 1996 |
| 5482872 |
Method of forming isolation region in a compound semiconductor substrate |
Jan. 9, 1996 |
| 5471073 |
Field effect transistor and method for producing the field effect transistor |
Nov. 28, 1995 |
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