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Class Information
Number: 438/178
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.) > Elemental semiconductor
Description: Process for making a Schottky gate field effect transistor wherein the gate electrode is formed upon an elemental semiconductor active channel region.










Patents under this class:

Patent Number Title Of Patent Date Issued
7951645 Power module for low thermal resistance and method of fabricating the same May. 31, 2011
7700422 Methods of forming memory arrays for increased bit density Apr. 20, 2010
7608503 Side wall active pin memory and manufacturing method Oct. 27, 2009
7569445 Semiconductor device with constricted current passage Aug. 4, 2009
7534675 Techniques for fabricating nanowire field-effect transistors May. 19, 2009
7456057 Germanium on glass and glass-ceramic structures Nov. 25, 2008
7449374 Methods of manufacturing semiconductor devices with rotated substrates Nov. 11, 2008
7427541 Carbon nanotube energy well (CNEW) field effect transistor Sep. 23, 2008
7351625 Recessed transistors and methods of forming the same Apr. 1, 2008
6744104 Semiconductor integrated circuit including insulated gate field effect transistor and method of manufacturing the same Jun. 1, 2004
6548333 Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment Apr. 15, 2003
6392271 Structure and process flow for fabrication of dual gate floating body integrated MOS transistors May. 21, 2002
6255149 Process for restricting interdiffusion in a semiconductor device with composite Si/SiGe gate Jul. 3, 2001
5002897 Method of making a complementary metal electrode semiconductor device Mar. 26, 1991
4843024 Method of producing a Schottky gate field effect transistor Jun. 27, 1989
4745082 Method of making a self-aligned MESFET using a substitutional gate with side walls May. 17, 1988
4553316 Self-aligned gate method for making MESFET semiconductor Nov. 19, 1985
4546540 Self-aligned manufacture of FET Oct. 15, 1985
4481704 Method of making an improved MESFET semiconductor device Nov. 13, 1984
4466174 Method for fabricating MESFET device using a double LOCOS process Aug. 21, 1984
4455738 Self-aligned gate method for making MESFET semiconductor Jun. 26, 1984
4358891 Method of forming a metal semiconductor field effect transistor Nov. 16, 1982
4304042 Self-aligned MESFETs having reduced series resistance Dec. 8, 1981
4277882 Method of producing a metal-semiconductor field-effect transistor Jul. 14, 1981
4253229 Self-aligned narrow gate MESFET process Mar. 3, 1981











 
 
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