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Class Information
Number: 438/174
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.) > Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.)
Description: Process for making a Schottky gate field effect transistor having a step of introducing an electrically active dopant species into the semiconductor channel region beneath the gate electrode.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7566668 |
Method of forming contact |
Jul. 28, 2009 |
| 7524714 |
Method for manufacturing semiconductor device |
Apr. 28, 2009 |
| 7501317 |
Method of manufacturing semiconductor device |
Mar. 10, 2009 |
| 7485514 |
Method for fabricating a MESFET |
Feb. 3, 2009 |
| 7387908 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
Jun. 17, 2008 |
| 7385232 |
CMOS imager with enhanced transfer of charge and low voltage operation and method of formation |
Jun. 10, 2008 |
| 7348251 |
Modulated trigger device |
Mar. 25, 2008 |
| 7332447 |
Method of forming a contact |
Feb. 19, 2008 |
| 7297580 |
Methods of fabricating transistors having buried p-type layers beneath the source region |
Nov. 20, 2007 |
| 7226824 |
Nitrogen controlled growth of dislocation loop in stress enhanced transistor |
Jun. 5, 2007 |
| 7157299 |
Nanofabrication of InAs/A1Sb heterostructures |
Jan. 2, 2007 |
| 7135367 |
Manufacturing method of semiconductor device |
Nov. 14, 2006 |
| 7064388 |
Semiconductor device and method for manufacturing the same |
Jun. 20, 2006 |
| 7033873 |
Methods of controlling gate electrode doping, and systems for accomplishing same |
Apr. 25, 2006 |
| 6924180 |
Method of forming a pocket implant region after formation of composite insulator spacers |
Aug. 2, 2005 |
| 6879006 |
MOS transistor and method for fabricating the same |
Apr. 12, 2005 |
| 6864516 |
SOI MOSFET junction degradation using multiple buried amorphous layers |
Mar. 8, 2005 |
| 6864131 |
Complementary Schottky junction transistors and methods of forming the same |
Mar. 8, 2005 |
| 6855586 |
Low voltage breakdown element for ESD trigger device |
Feb. 15, 2005 |
| 6838325 |
Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor |
Jan. 4, 2005 |
| 6808970 |
Semiconductor device having an improved strained surface layer and method of forming a strained surface layer in a semiconductor device |
Oct. 26, 2004 |
| 6797555 |
Direct implantation of fluorine into the channel region of a PMOS device |
Sep. 28, 2004 |
| 6793834 |
Apparatus for and method of processing an object to be processed |
Sep. 21, 2004 |
| 6767772 |
Active matrix substrate, electrooptical device, and method of producing active matrix substrate |
Jul. 27, 2004 |
| 6723593 |
Deep submicron MOS transistor with increased threshold voltage |
Apr. 20, 2004 |
| 6689687 |
Two-step process for nickel deposition |
Feb. 10, 2004 |
| 6673645 |
Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver |
Jan. 6, 2004 |
| 6638801 |
Semiconductor device and its manufacturing method |
Oct. 28, 2003 |
| 6602759 |
Shallow trench isolation for thin silicon/silicon-on-insulator substrates by utilizing polysilicon |
Aug. 5, 2003 |
| 6599782 |
Semiconductor device and method of fabricating thereof |
Jul. 29, 2003 |
| 6579750 |
Manufacturing method for fully depleted silicon on insulator semiconductor device |
Jun. 17, 2003 |
| 6573138 |
Nonvolatile memory cell with low doping region |
Jun. 3, 2003 |
| 6555850 |
Field-effect transistor |
Apr. 29, 2003 |
| 6541319 |
Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodes |
Apr. 1, 2003 |
| 6541825 |
Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same |
Apr. 1, 2003 |
| 6538927 |
Semiconductor storage device and production method thereof |
Mar. 25, 2003 |
| 6482724 |
Integrated circuit asymmetric transistors |
Nov. 19, 2002 |
| 6448120 |
Totally self-aligned transistor with tungsten gate |
Sep. 10, 2002 |
| 6417550 |
High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage |
Jul. 9, 2002 |
| 6399430 |
Field effect transistor and method of manufacturing the same |
Jun. 4, 2002 |
| 6380012 |
Boron difluoride plasma doping method for forming ultra-shallow junction |
Apr. 30, 2002 |
| 6358785 |
Method for forming shallow trench isolation structures |
Mar. 19, 2002 |
| 6337230 |
Semiconductor device and manufacturing method thereof |
Jan. 8, 2002 |
| 6337233 |
Method of manufacturing a polycrystalline silicon layer |
Jan. 8, 2002 |
| 6329271 |
Self-aligned channel implantation |
Dec. 11, 2001 |
| 6316297 |
Semiconductor device and method for fabricating the same |
Nov. 13, 2001 |
| 6238982 |
Multiple threshold voltage semiconductor device fabrication technology |
May. 29, 2001 |
| 6221703 |
Method of ion implantation for adjusting the threshold voltage of MOS transistors |
Apr. 24, 2001 |
| 6180464 |
Metal oxide semiconductor device with localized laterally doped channel |
Jan. 30, 2001 |
| 6146931 |
Method of forming a semiconductor device having a barrier layer interposed between the ohmic contact and the schottky contact |
Nov. 14, 2000 |
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