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Class Information
Number: 438/172
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.) > Having heterojunction (e.g., hemt, modfet, etc.)
Description: Process for making a Schottky gate field effect transistor wherein the Schottky gate field effect transistor possesses an interface between two dissimilar semiconductor materials which constitute a junction.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7626217 |
Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices |
Dec. 1, 2009 |
| 7622322 |
Method of forming an AlN coated heterojunction field effect transistor |
Nov. 24, 2009 |
| 7618851 |
Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure |
Nov. 17, 2009 |
| 7608496 |
High speed GE channel heterostructures for field effect devices |
Oct. 27, 2009 |
| 7605017 |
Method of manufacturing a semiconductor device and products made thereby |
Oct. 20, 2009 |
| 7601573 |
Method for producing nitride semiconductor device |
Oct. 13, 2009 |
| 7598108 |
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers |
Oct. 6, 2009 |
| 7598131 |
High power-low noise microwave GaN heterojunction field effect transistor |
Oct. 6, 2009 |
| 7592211 |
Methods of fabricating transistors including supported gate electrodes |
Sep. 22, 2009 |
| 7585706 |
Method of fabricating a semiconductor device |
Sep. 8, 2009 |
| 7569442 |
High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof |
Aug. 4, 2009 |
| 7560323 |
Compound semiconductor device and method of fabricating the same |
Jul. 14, 2009 |
| 7560322 |
Method of making a semiconductor structure for high power semiconductor devices |
Jul. 14, 2009 |
| 7553691 |
Method and apparatus of multiplejunction solar cell structure with high band gap heterojunction middle cell |
Jun. 30, 2009 |
| 7550783 |
Wide bandgap HEMTs with source connected field plates |
Jun. 23, 2009 |
| 7541232 |
Method for fabrication of devices in a multi-layer structure |
Jun. 2, 2009 |
| 7534710 |
Coupled quantum well devices (CQWD) containing two or more direct selective contacts and methods of making same |
May. 19, 2009 |
| 7531396 |
Method of manufacturing semiconductor device |
May. 12, 2009 |
| 7531397 |
Method for manufacturing a semiconductor device on GAN substrate having surface bidirectionally inclined toward <1-100> and <11-20> directions relative to {0001} crystal planes |
May. 12, 2009 |
| 7498213 |
Methods of fabricating a semiconductor substrate for reducing wafer warpage |
Mar. 3, 2009 |
| 7494855 |
Compound semiconductor device and method for fabricating the same |
Feb. 24, 2009 |
| 7485512 |
Method of manufacturing an adaptive AIGaN buffer layer |
Feb. 3, 2009 |
| 7485503 |
Dielectric interface for group III-V semiconductor device |
Feb. 3, 2009 |
| 7459356 |
High voltage GaN-based transistor structure |
Dec. 2, 2008 |
| 7459718 |
Field effect transistor |
Dec. 2, 2008 |
| 7459731 |
Device containing isolation regions with threading dislocations |
Dec. 2, 2008 |
| 7456443 |
Transistors having buried n-type and p-type regions beneath the source region |
Nov. 25, 2008 |
| 7432142 |
Methods of fabricating nitride-based transistors having regrown ohmic contact regions |
Oct. 7, 2008 |
| 7425488 |
Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors |
Sep. 16, 2008 |
| 7420226 |
Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates |
Sep. 2, 2008 |
| 7419892 |
Semiconductor devices including implanted regions and protective layers and methods of forming the same |
Sep. 2, 2008 |
| 7416909 |
Methods for preserving strained semiconductor substrate layers during CMOS processing |
Aug. 26, 2008 |
| 7413958 |
GaN-based permeable base transistor and method of fabrication |
Aug. 19, 2008 |
| 7402844 |
Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
Jul. 22, 2008 |
| 7393735 |
Structure for and method of fabricating a high-mobility field-effect transistor |
Jul. 1, 2008 |
| 7364988 |
Method of manufacturing gallium nitride based high-electron mobility devices |
Apr. 29, 2008 |
| 7361536 |
Method of fabrication of a field effect transistor with materialistically different two etch stop layers in an enhanced mode transistor and an depletion mode transistor |
Apr. 22, 2008 |
| 7352017 |
Nitride semiconductor device and manufacturing method thereof |
Apr. 1, 2008 |
| 7338826 |
Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs |
Mar. 4, 2008 |
| 7321132 |
Multi-layer structure for use in the fabrication of integrated circuit devices and methods for fabrication of same |
Jan. 22, 2008 |
| 7303968 |
Semiconductor device and method having multiple subcollectors formed on a common wafer |
Dec. 4, 2007 |
| 7297589 |
Transistor device and method |
Nov. 20, 2007 |
| 7297580 |
Methods of fabricating transistors having buried p-type layers beneath the source region |
Nov. 20, 2007 |
| 7294540 |
Method for manufacturing a nitride based semiconductor device |
Nov. 13, 2007 |
| 7291873 |
High electron mobility epitaxial substrate |
Nov. 6, 2007 |
| 7285806 |
Semiconductor device having an active region formed from group III nitride |
Oct. 23, 2007 |
| 7268027 |
Method of manufacturing photoreceiver |
Sep. 11, 2007 |
| 7247893 |
Non-planar nitride-based heterostructure field effect transistor |
Jul. 24, 2007 |
| 7238560 |
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate |
Jul. 3, 2007 |
| 7226818 |
High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing |
Jun. 5, 2007 |
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