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Class Information
Number: 438/167
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.)
Description: Process for making a field effect transistor which possesses a gate which forms a metal-semiconductor rectifying junction with the underlying semiconductive active channel region.










Sub-classes under this class:

Class Number Class Name Patents
438/170 And bipolar device 60
438/171 And passive electrical device (e.g., resistor, capacitor, etc.) 117
438/179 Asymmetric 92
438/175 Buried channel 52
438/177 Closed or loop gate 15
438/169 Complementary schottky gate field effect transistors 58
438/174 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) 156
438/178 Elemental semiconductor 25
438/172 Having heterojunction (e.g., hemt, modfet, etc.) 484
438/176 Plural gate electrodes (e.g., dual gate, etc.) 168
438/180 Self-aligned 96
438/168 Specified crystallographic orientation 44
438/173 Vertical channel 105


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
7199442 Schottky diode structure to reduce capacitance and switching losses and method of making same Apr. 3, 2007
7183149 Method of manufacturing field effect transistor Feb. 27, 2007
7183573 Disposable spacer for symmetric and asymmetric Schottky contact to SOI mosfet Feb. 27, 2007
7176075 Field effect transistor and method of fabrication Feb. 13, 2007
7169634 Design and fabrication of rugged FRED Jan. 30, 2007
7166894 Schottky power diode with SiCOI substrate and process for making such diode Jan. 23, 2007
7144765 Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereof Dec. 5, 2006
7135411 Method for etching mesa isolation in antimony-based compound semiconductor structures Nov. 14, 2006
7132699 Compound semiconductor device and its manufacture Nov. 7, 2006
7118813 Vicinal gallium nitride substrate for high quality homoepitaxy Oct. 10, 2006
7105393 Strained silicon layer fabrication with reduced dislocation defect density Sep. 12, 2006
7084475 Lateral conduction Schottky diode with plural mesas Aug. 1, 2006
7084021 Method of forming a structure wherein an electrode comprising a refractory metal is deposited Aug. 1, 2006
7067361 Methods of fabricating silicon carbide metal-semiconductor field effect transistors Jun. 27, 2006
7029965 Semiconductor device and manufacturing method thereof Apr. 18, 2006
7015518 HEMT device with a mesa isolating multilayer film Mar. 21, 2006
7011997 Method of fabricating a HEMT device Mar. 14, 2006
7012287 HEMT device with a mesa isolating multilayer film Mar. 14, 2006
7002187 Integrated schottky diode using buried power buss structure and method for making same Feb. 21, 2006
6998677 Semiconductor component and method of manufacture Feb. 14, 2006
6989287 Method for producing nitride semiconductor, semiconductor wafer and semiconductor device Jan. 24, 2006
6987289 High-density FinFET integration scheme Jan. 17, 2006
6984853 Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection Jan. 10, 2006
6949401 Semiconductor component and method for producing the same Sep. 27, 2005
6943068 Method for fabricating nanometer gate in semiconductor device using thermally reflowed resist technology Sep. 13, 2005
6929987 Microelectronic device fabrication method Aug. 16, 2005
6902964 Methods of fabricating delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure Jun. 7, 2005
6867078 Method for forming a microwave field effect transistor with high operating voltage Mar. 15, 2005
6864131 Complementary Schottky junction transistors and methods of forming the same Mar. 8, 2005
6861679 Gallium indium nitride arsenide based epitaxial wafer, a hetero field effect transistor using the wafer, and a method of fabricating the hetero field effect transistor Mar. 1, 2005
6852993 Emission process for a single photon, corresponding semiconducting device and manufacturing process Feb. 8, 2005
6852578 Schottky diode static random access memory (DSRAM) device, a method for making same, and CFET based DTL Feb. 8, 2005
6852579 Method of manufacturing a semiconductor integrated circuit device Feb. 8, 2005
6841435 Method for fabricating a GaInP epitaxial stacking structure Jan. 11, 2005
6825073 Schottky diode with high field breakdown and low reverse leakage current Nov. 30, 2004
6821829 Method of manufacturing a semiconductor component and semiconductor component thereof Nov. 23, 2004
6812078 Method for transferring and stacking of semiconductor devices Nov. 2, 2004
6797994 Double recessed transistor Sep. 28, 2004
6787820 Hetero-junction field effect transistor having an InGaAIN cap film Sep. 7, 2004
6784017 Method of creating a high performance organic semiconductor device Aug. 31, 2004
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Aug. 31, 2004
6780694 MOS transistor Aug. 24, 2004
6777277 Manufacturing method of Schottky barrier diode Aug. 17, 2004
6770548 Trench schottky rectifier Aug. 3, 2004
6770519 Semiconductor manufacturing method using two-stage annealing Aug. 3, 2004
6762083 Method for manufacturing heterojunction field effect transistor device Jul. 13, 2004
6759312 Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Jul. 6, 2004
6747299 High frequency semiconductor device Jun. 8, 2004
6740535 Enhanced T-gate structure for modulation doped field effect transistors May. 25, 2004
6737341 Semiconductor integrated circuit device and method for manufacturing the same May. 18, 2004

1 2 3 4 5 6 7 8










 
 
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