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Class Information
Number: 438/167
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Having schottky gate (e.g., mesfet, hemt, etc.)
Description: Process for making a field effect transistor which possesses a gate which forms a metal-semiconductor rectifying junction with the underlying semiconductive active channel region.










Sub-classes under this class:

Class Number Class Name Patents
438/170 And bipolar device 60
438/171 And passive electrical device (e.g., resistor, capacitor, etc.) 117
438/179 Asymmetric 92
438/175 Buried channel 52
438/177 Closed or loop gate 15
438/169 Complementary schottky gate field effect transistors 58
438/174 Doping of semiconductive channel region beneath gate (e.g., threshold voltage adjustment, etc.) 156
438/178 Elemental semiconductor 25
438/172 Having heterojunction (e.g., hemt, modfet, etc.) 484
438/176 Plural gate electrodes (e.g., dual gate, etc.) 168
438/180 Self-aligned 96
438/168 Specified crystallographic orientation 44
438/173 Vertical channel 105


Patents under this class:
1 2 3 4 5 6 7 8

Patent Number Title Of Patent Date Issued
8709886 Compound semiconductor device and manufacturing method therefor Apr. 29, 2014
8710551 High electron mobility transistor and manufacturing method thereof Apr. 29, 2014
8680614 Split trench-gate MOSFET with integrated Schottky diode Mar. 25, 2014
8674372 HEMT with integrated low forward bias diode Mar. 18, 2014
8658482 Compound semiconductor device and method for fabricating the same Feb. 25, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8653559 AlGaN/GaN hybrid MOS-HFET Feb. 18, 2014
8647936 Junction field effect transistor with an epitaxially grown gate structure Feb. 11, 2014
8648354 Electronic field effect devices and methods for their manufacture Feb. 11, 2014
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure Feb. 4, 2014
8643062 III-N device structures and methods Feb. 4, 2014
8637360 Power devices with integrated protection devices: structures and methods Jan. 28, 2014
8618577 Compound semiconductor device and manufacturing method thereof Dec. 31, 2013
8614460 Semiconductor device and fabrication method of the semiconductor device Dec. 24, 2013
8592298 Fabrication of floating guard rings using selective regrowth Nov. 26, 2013
8569123 Method for manufacturing silicon carbide semiconductor device Oct. 29, 2013
8569769 E-mode high electron mobility transistors and methods of manufacturing the same Oct. 29, 2013
8558281 Gate metallization methods for self-aligned sidewall gate GaN HEMT Oct. 15, 2013
8557644 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device Oct. 15, 2013
8551821 Enhancement normally off nitride semiconductor device manufacturing the same Oct. 8, 2013
8552471 Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same Oct. 8, 2013
8546852 Semiconductor device Oct. 1, 2013
8546848 Nitride semiconductor device Oct. 1, 2013
8525231 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8492261 Damascene contacts on III-V CMOS devices Jul. 23, 2013
8486816 Diamond semiconductor element and process for producing the same Jul. 16, 2013
8476677 Semiconductor device Jul. 2, 2013
8476125 Fabrication technique for high frequency, high power group III nitride electronic devices Jul. 2, 2013
8466051 Method for fabricating Schottky device Jun. 18, 2013
8461593 Display apparatus and method of manufacturing the same Jun. 11, 2013
8445341 Semiconductor device and fabrication method for the same May. 21, 2013
8420468 Strain-compensated field effect transistor and associated method of forming the transistor Apr. 16, 2013
8410552 Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor device Apr. 2, 2013
8390000 Semiconductor devices with field plates Mar. 5, 2013
8389348 Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics Mar. 5, 2013
8383471 Self aligned sidewall gate GaN HEMT Feb. 26, 2013
8377767 Insulated gate field effect transistor having passivated schottky barriers to the channel Feb. 19, 2013
8368168 III-V-group compound semiconductor device Feb. 5, 2013
8362492 Electronic field effect devices and methods for their manufacture Jan. 29, 2013
8350295 Device structure including high-thermal-conductivity substrate Jan. 8, 2013
8304271 Integrated circuit having a bulk acoustic wave device and a transistor Nov. 6, 2012
8288253 In.sub.xGa.sub.1-xAs.sub.YP.sub.1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistors Oct. 16, 2012
8283243 Bottom anode schottky diode structure and method Oct. 9, 2012
8253169 Semiconductor device and manufacturing method for semiconductor device Aug. 28, 2012
8211785 Fabrication method for semiconductor device including flash lamp annealing processes Jul. 3, 2012
8188515 Semiconductor device May. 29, 2012
8183103 Integrated circuit structure including schottky diode and method for manufacturing the same May. 22, 2012
8168486 Methods for manufacturing enhancement-mode HEMTs with self-aligned field plate May. 1, 2012
8168485 Semiconductor device making method May. 1, 2012
8154127 Optical device and method of making the same Apr. 10, 2012

1 2 3 4 5 6 7 8










 
 
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