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Class Information
Number: 438/146
Name: Semiconductor device manufacturing: process > Making field effect device having pair of active regions separated by gate structure by formation or alteration of semiconductive active regions > Charge transfer device (e.g., ccd, etc.) > Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
Description: Process for making a charge transfer device structure wherein the transfer of such charge minima is by majority carriers of the semiconductive material (i.e., by electrons in n-type material, and is by holes in p-type semiconductive material).










Patents under this class:
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Patent Number Title Of Patent Date Issued
8642430 Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers Feb. 4, 2014
8551810 Method for manufacturing semiconductor device Oct. 8, 2013
8461630 Semiconductor device and manufacturing method thereof Jun. 11, 2013
8383448 Method of fabricating metal oxide semiconductor device Feb. 26, 2013
8247294 Manufacturing process of fin-type field effect transistor and semiconductor Aug. 21, 2012
8193031 Method for manufacturing semiconductor device Jun. 5, 2012
8119474 High performance capacitors in planar back gates CMOS Feb. 21, 2012
8105924 Deep trench based far subcollector reachthrough Jan. 31, 2012
7977200 Charge breakdown avoidance for MIM elements in SOI base technology and method Jul. 12, 2011
7807514 CCD with improved charge transfer Oct. 5, 2010
7723145 Solid-state imaging device and manufacturing method for the same May. 25, 2010
7691734 Deep trench based far subcollector reachthrough Apr. 6, 2010
7544552 Method for manufacturing junction semiconductor device Jun. 9, 2009
7314801 Semiconductor device having a surface conducting channel and method of forming Jan. 1, 2008
7052939 Structure to reduce signal cross-talk through semiconductor substrate for system on chip applications May. 30, 2006
6927091 Method for fabricating solid-state imaging device Aug. 9, 2005
6780686 Doping methods for fully-depleted SOI structures, and device comprising the resulting doped regions Aug. 24, 2004
6713323 Semiconductor device and method of manufacturing the same Mar. 30, 2004
6649454 Method for fabricating a charge coupled device Nov. 18, 2003
6573138 Nonvolatile memory cell with low doping region Jun. 3, 2003
6555421 Method and apparatus for manufacturing semiconductor device Apr. 29, 2003
6432763 Field effect transistor having doped gate with prevention of contamination from the gate during implantation Aug. 13, 2002
6380005 Charge transfer device and method for manufacturing the same Apr. 30, 2002
6210990 Method for fabricating solid state image sensor Apr. 3, 2001
6194748 MOSFET with suppressed gate-edge fringing field effect Feb. 27, 2001
6133063 Process for producing a pin layer sequence on a perovskite and a perovskite having a pin layer sequence Oct. 17, 2000
6107124 Charge coupled device and method of fabricating the same Aug. 22, 2000
6054341 Method of manufacturing charge-coupled device having different light-receiving region and charge-isolating layer structures Apr. 25, 2000
5981309 Method for fabricating charge coupled device image sensor Nov. 9, 1999
5972733 Self-aligned barrier process with antiblooming drain for advanced virtual phase charged coupled devices Oct. 26, 1999
5858812 Method for fabricating interline-transfer CCD image sensor Jan. 12, 1999
5788763 Manufacturing method of a silicon wafer having a controlled BMD concentration Aug. 4, 1998
5773324 Bidirectional horizontal charge transfer device and method Jun. 30, 1998
5607872 Method of fabricating charge coupled device Mar. 4, 1997
5583071 Image sensor with improved output region for superior charge transfer characteristics Dec. 10, 1996
5567641 Method of making a bipolar gate charge coupled device with clocked virtual phase Oct. 22, 1996
5556803 Method for fabricating a charge coupled device Sep. 17, 1996
5500383 Method for fabricating a CCD image sensor with active transistor pixel Mar. 19, 1996
5488010 Method of fabricating sidewall charge-coupled device with trench isolation Jan. 30, 1996
5302543 Method of making a charge coupled device Apr. 12, 1994
5298448 Method of making two-phase buried channel planar gate CCD Mar. 29, 1994
5185271 Method of manufacturing a buried-channel charge-coupled image sensor Feb. 9, 1993
5151380 Method of making top buss virtual phase frame interline transfer CCD image sensor Sep. 29, 1992
5114833 Charge-coupled device and process of making the device May. 19, 1992
5024963 Method of fabricating a BCCD channel with stair-case doping by self-alignment Jun. 18, 1991
4906584 Fast channel single phase buried channel CCD Mar. 6, 1990
4859624 Manufacturing method of semiconductor device having CCD and peripheral circuit Aug. 22, 1989
4806498 Semiconductor charge-coupled device and process of fabrication thereof Feb. 21, 1989
4753900 Method of forming electrodes aligned with respect to a level of implantation in a substrate and a method of forming a charge transfer filter Jun. 28, 1988
4742016 Method of manufacture of a two-phase CCD May. 3, 1988

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