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Class Information
Number: 438/139
Name: Semiconductor device manufacturing: process > Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) > Altering electrical characteristic
Description: Process having a step of altering an electrical characteristic of the regenerative-type switching device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442584 |
Isolated vertical power device structure with both N-doped and P-doped trenches |
Oct. 28, 2008 |
| 7419877 |
Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination |
Sep. 2, 2008 |
| 7361570 |
Semiconductor device having an implanted precipitate region and a method of manufacture therefor |
Apr. 22, 2008 |
| 7351614 |
Deep trench isolation for thyristor-based semiconductor device |
Apr. 1, 2008 |
| 7264986 |
Microelectronic assembly and method for forming the same |
Sep. 4, 2007 |
| 7195959 |
Thyristor-based semiconductor device and method of fabrication |
Mar. 27, 2007 |
| 7186381 |
Hydrogen gas sensor |
Mar. 6, 2007 |
| 7118982 |
Emitter and method of making |
Oct. 10, 2006 |
| 7037814 |
Single mask control of doping levels |
May. 2, 2006 |
| 6943406 |
Semiconductor device |
Sep. 13, 2005 |
| 6927101 |
Field-effect-controllable semiconductor component and method for fabricating the component |
Aug. 9, 2005 |
| 6924177 |
Method for producing a thyristor |
Aug. 2, 2005 |
| 6864540 |
High performance FET with elevated source/drain region |
Mar. 8, 2005 |
| 6838300 |
Chemical treatment of low-k dielectric films |
Jan. 4, 2005 |
| 6828177 |
Gate pad protection structure for power semiconductor device and manufacturing method therefor |
Dec. 7, 2004 |
| 6773968 |
High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
Aug. 10, 2004 |
| 6770910 |
Thin-film transistor array structure |
Aug. 3, 2004 |
| 6762080 |
Method of manufacturing a semiconductor device having a cathode and an anode from a wafer |
Jul. 13, 2004 |
| 6552360 |
Method and circuit layout for reducing post chemical mechanical polishing defect count |
Apr. 22, 2003 |
| 6534380 |
Semiconductor substrate and method of manufacturing the same |
Mar. 18, 2003 |
| 6489187 |
Method for setting the breakover voltage of a thyristor |
Dec. 3, 2002 |
| 6436788 |
Field emission display having reduced optical sensitivity and method |
Aug. 20, 2002 |
| 6306690 |
Process flow to integrate high and low voltage peripheral transistors with a floating gate array |
Oct. 23, 2001 |
| 5994171 |
Method of making lateral components in power semiconductor devices |
Nov. 30, 1999 |
| 5970324 |
Methods of making dual gated power electronic switching devices |
Oct. 19, 1999 |
| 5940699 |
Process of fabricating semiconductor device |
Aug. 17, 1999 |
| 5766966 |
Power transistor device having ultra deep increased concentration region |
Jun. 16, 1998 |
| 5510274 |
Method of controlling a carrier lifetime in a semiconductor switching device |
Apr. 23, 1996 |
| 5422288 |
Method of doping a JFET region in a MOS-gated semiconductor device |
Jun. 6, 1995 |
| 5420045 |
Process for manufacturing thyristor with adjustable breakover voltage |
May. 30, 1995 |
| 5292672 |
Method of manufacturing an insulated gate bipolar transistor |
Mar. 8, 1994 |
| 5284780 |
Method for increasing the electric strength of a multi-layer semiconductor component |
Feb. 8, 1994 |
| 5283202 |
IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions |
Feb. 1, 1994 |
| 5262336 |
IGBT process to produce platinum lifetime control |
Nov. 16, 1993 |
| 5227315 |
Process of introduction and diffusion of platinum ions in a slice of silicon |
Jul. 13, 1993 |
| 5171696 |
Semiconductor device and method of manufacturing the same |
Dec. 15, 1992 |
| 5017508 |
Method of annealing fully-fabricated, radiation damaged semiconductor devices |
May. 21, 1991 |
| 4987098 |
Method of producing a metal-oxide semiconductor device |
Jan. 22, 1991 |
| 4987087 |
Process for manufacturing a thyristor with proton irradiation |
Jan. 22, 1991 |
| 4806497 |
Method for producing large-area power semiconductor components |
Feb. 21, 1989 |
| 4792530 |
Process for balancing forward and reverse characteristic of thyristors |
Dec. 20, 1988 |
| 4684413 |
Method for increasing the switching speed of a semiconductor device by neutron irradiation |
Aug. 4, 1987 |
| 4662957 |
Method of producing a gate turn-off thyristor |
May. 5, 1987 |
| 4639276 |
Method of making thyristor with a high tolerable bias voltage |
Jan. 27, 1987 |
| 4613381 |
Method for fabricating a thyristor |
Sep. 23, 1986 |
| 4555845 |
Temperature stable self-protected thyristor and method of producing |
Dec. 3, 1985 |
| 4551353 |
Method for reducing leakage currents in semiconductor devices |
Nov. 5, 1985 |
| 4370180 |
Method for manufacturing power switching devices |
Jan. 25, 1983 |
| 4353754 |
Thermo-sensitive switching element manufacturing method |
Oct. 12, 1982 |
| 4311534 |
Reducing the reverse recovery charge of thyristors by nuclear irradiation |
Jan. 19, 1982 |
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