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Class Information
Number: 438/137
Name: Semiconductor device manufacturing: process > Making regenerative-type switching device (e.g., scr, igbt, thyristor, etc.) > Having field effect structure > Junction gate > Vertical channel
Description: Process for making a junction gate regenerative-type switching device wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.
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Patent Number |
Title Of Patent |
Date Issued |
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Sep. 17, 2013 |
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Method for fabricating semiconductor power device |
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Aug. 20, 2013 |
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Aug. 20, 2013 |
8507335 |
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Aug. 13, 2013 |
8502282 |
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Apr. 23, 2013 |
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Jan. 22, 2013 |
8263440 |
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Sep. 11, 2012 |
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Jul. 17, 2012 |
8202772 |
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Jun. 19, 2012 |
8174066 |
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8163618 |
Power MOSFET device structure for high frequency applications |
Apr. 24, 2012 |
8145020 |
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Mar. 13, 2012 |
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Jan. 10, 2012 |
8093122 |
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Jan. 10, 2012 |
8084778 |
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Dec. 27, 2011 |
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Power devices with super junctions and associated methods manufacturing |
Dec. 27, 2011 |
8067289 |
Semiconductor device and manufacturing method thereof |
Nov. 29, 2011 |
8058655 |
Vertical junction field effect transistors having sloped sidewalls and methods of making |
Nov. 15, 2011 |
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Jul. 12, 2011 |
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Apr. 19, 2011 |
7928469 |
MOSFET and method for manufacturing MOSFET |
Apr. 19, 2011 |
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7838117 |
Silicone-sealed LED |
Nov. 23, 2010 |
7824969 |
Finfet devices and methods for manufacturing the same |
Nov. 2, 2010 |
7820511 |
Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
Oct. 26, 2010 |
7759172 |
Method of forming a planar combined structure of a bipolar junction transistor and n-type and p-type metal semiconductor field-effect transistors and method for forming the same |
Jul. 20, 2010 |
7556994 |
Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
Jul. 7, 2009 |
7547585 |
P channel Rad Hard MOSFET with enhancement implant |
Jun. 16, 2009 |
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High voltage non punch through IGBT for switch mode power supplies |
May. 19, 2009 |
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Vertical transistors |
Apr. 21, 2009 |
7510924 |
Method for manufacturing memory cell |
Mar. 31, 2009 |
7442584 |
Isolated vertical power device structure with both N-doped and P-doped trenches |
Oct. 28, 2008 |
7432134 |
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Oct. 7, 2008 |
7407837 |
Method of manufacturing silicon carbide semiconductor device |
Aug. 5, 2008 |
7371462 |
Hardenable composition, hardening product, process for producing the same and light emitting diode sealed with the hardening product |
May. 13, 2008 |
7355223 |
Vertical junction field effect transistor having an epitaxial gate |
Apr. 8, 2008 |
7351614 |
Deep trench isolation for thyristor-based semiconductor device |
Apr. 1, 2008 |
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